Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate

A 5.35-mu m-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half maximum of ZnO (0002) omega-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction theta - 2. scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film.

Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with different wetting layer (WL) thickness, using the finite element method (FEM). The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.

X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates

In order to understand the growth feature of GaN on GaAs (0 0 1) substrates grown by metalorganic chemical vapor deposition (MOCVD), the crystallinity of GaN buffer layers with different thicknesses was investigated by using double crystal X-ray diffraction (DCXRD) measurements. The XRD results showed that the buffer layers consist of predominantly hexagonal GaN (h-GaN) and its content increases with buffer layer thickness. The nominal GaN (111) reflections with chi at 54.74degrees can be detected easily, while (0 0 2) reflections are rather weak. The integrated intensity of reflections from (111) planes is 4-6 times that of (0 0 2) reflections. Possible explanations are presented. (C) 2003 Elsevier Science B.V. All rights reserved.

High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers

A new method of measuring the thickness of GaN epilayers on sapphire (0 0 0 1) substrates by using double crystal X-ray diffraction was proposed. The ratio of the integrated intensity between the GaN epilayer and the sapphire substrate showed a linear relationship with the GaN epilayer thickness up to 2.12 mum. It is practical and convenient to measure the GaN epilayer thickness using this ratio, and can mostly eliminate the effect of the reabsorption, the extinction and other scattering factors of the GaN epilayers. (C) 2003 Elsevier Science B.V. All rights reserved.

Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates

Microtwins in the 3C-SiC films grown on Si(0 0 1) by atmosphere pressure chemical vapor deposition (APCVD) were investigated in detail using X-ray four-circle diffractometry. The Phi scan shows that 3C-SiC films can grow on Si substrates epitaxially and epitaxial relationship is revealed as (0 0 1)(3C) (SiC)parallel to (0 0 1)(Si),[1 1 1](3C-SiC)parallel to [1 1 1](Si). Other diffraction peaks at about 15.8 degrees in x emerged in the pole figures of the (I 1 1) 3C-SiC. We performed the pole figure of (1 0 (1) over bar 0)h-SiC and the reciprocal space mapping from the (1 1 1) reciprocal lattice point of base SiC to the (0 0 2) point of microtwin for the first time, indicating that the diffraction peaks at 15.8 degrees in x result from not hexagonal SiC but microtwins of 3C-SiC, and twin inclusions are estimated to be around 1%. (C) 2001 Published by Elsevier Science B.V.

Tentative analysis of Swirl defects in silicon crystals

Swirl defects in dislocation-free Czochralski (CZ) silicon crystals have been investigated by preferential etching, transmission electron microscopy (TER I) and electron energy loss spectroscopy (EELS) mode of a scanning transmission electron microscope (STEM). Two kinds of Swirl defects have been found with a good correspondence between striated pattern consisting of hillocks and the buried micro-defects. The Swirl defects were identified as perfect dislocation loop cluster and tetrahedral precipitate, respectively. In addition, a kind of tiny micro-defects is found to be distributed preferentially in the vicinity of the Swirl pattern although there is no detectable correspondence between hillocks and the micro-defects. The energy-filtered images have been obtained by the plasma peaks at different parts of a coherent precipitate with the Si matrix. The experimental results show some indications of the existence of oxygen and carbon in the core of the precipitate and suggest that oxygen and carbon may play important roles in the formation of Swirl defect. (C) 2000 Elsevier Science B.V. All rights reserved.

Quasi-thermodynamic analysis of MOVPE of AlGaN

A quasi-thermodynamic analysis of the MOVPE growth of AlxGa1-xN alloy using TMGa, TMA1 and ammonia has been proposed. The effect of varying growth conditions (growth temperature, reactor pressure, input V/III ratio, hydrogen pressure fraction in the carrier gas and the decomposed fraction of ammonia) on the distribution coefficient of Al has been calculated. In the case of AlxGa1-xN, preferential incorporation of Al is predicted. The calculated relationship between input vapour and deposited solid composition has been compared with data in the literature. A good agreement between the calculated and the experimental composition shows that our improved model is suitable for applying to the AlxGa1-xN alloy grown by MOVPE. (C) 2000 Elsevier Science B.V. All rights reserved.

Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers

We have investigated the photoluminescence (PL) properties of nitrogen-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen radio frequency-plasma source. The PL data shows that the relative intensity of the donor-bound exciton (I-2) emission to the acceptor-bound exciton (I-1) emission strongly depends on both the excitation power and the temperature. This result is explained by a thermalization model of the bound exciton which involved in the capture and emission between the neutral donor bound exciton, the neutral acceptor bound exciton and the free exciton. Quantitative analysis with the proposed mechanism is in good agreement with the experimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)09102-1].

Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy

Atomic force microscopy (AFM) measurements of nanometer-sized islands formed by 2 monolayers of InAs by molecular beam epitaxy have been carried out and the scan line of individual islands was extracted from raw AFM data for investigation. It is found that the base widths of nanometer-sized islands obtained by AFM are not reliable due to the finite size and shape of the contacting probe. A simple model is proposed to analyze the deviation of the measured value From the real value of the base width of InAs islands. (C) 1998 Elsevier Science B.V. All rights reserved.

Analysis of Dopant distributions in LEC-InP

It is often important to be able to estimate the concentration of dopant atoms incorporated into InP crystals grown from InP melt of given composition. In this paper we present a simple parameter (G) to revise the commonly used effective distribution coefficient (k(eff)) and the Scheil equation. The results obtained for various dopants and different initial concentrations in LEC-grown InP ingots are discussed. It is shown that the revised dopant concentration curves tally with the real distributions.

Thermal analysis of microstructural evolution of Al2O3 surface modified layers

Solidification behavior and microstructural evolution of surface modified layers in plasma cladding technique are studied via numerical simulations. Both the coupling effect of temperature and solid volume fraction are considered in the proposed thermal analytical model, by which the transient temperature distributions are calculated and the shape of melting pool is determined. Furthermore, we perform microscopic thermal analysis on the nucleation and growth behaviors of ceramic hardening phases and dendrites, as well as the kinetics of related two-phase flow systems. By comparing with experimental observations, the evolution mechanisms of the morphology of Al2O3 ceramic hardening layer are explained. Based on the above results, a relationship among the scanning velocity of plasma stream, dendritic growth rate and the advancing speed of solid/liquid interface is found, and an energy criterion is proposed for predicting the pushing/engulfing transition of ceramic particles by grain growth fronts. (C) 2009 Elsevier B.V. All rights reserved.

Analysis of spatio-temporal dynamic pattern and driving forces of urban land in China in 1990s using TM images and GIS

China has witnessed fast urban growth in the recent decade. This study analyzes spatio-temporal characteristics of urban expansion in China using satellite images and regionalization methods. Landsat TM images at three time periods, 1990/1991, 1995/1996, and 1999/2000, are interpreted to get 1:100000 vector land use datasets. The study calculates the urban land percentage and urban land expansion index of every 1 km(2) cell throughout China. The study divides China into 27 urban regions to conceive dynamic patterns of urban land changes. Urban development was achieving momentum in the western region, expanding more noticeably than in the previous five years, and seeing an increased growth percentage. Land use dynamic changes reflect the strong impacts of economic growth environments and macro-urban development policies. The paper helps to distinguish the influences of newly market-oriented forces from traditional administrative controls on China's urban expansion. (c) 2005 Elsevier Ltd. All rights reserved.

Primary and secondary crystallization kinetic analysis of nylon 1212

The isothermal and non-isothermal melt-crystallization kinetics of nylon 1212 were investigated by differential scanning calorimetry. Primary and secondary crystallization behaviors were analysed based on different approaches. The results obtained suggested that primary crystallization under isothermal conditions involves three-dimensional spherulite growth initiated by athermal nucleation, while under non-isothermal conditions, the mechanism of primary crystallization is more complex. Secondary crystallization displays a lower-dimensional crystal growth, both in the isothermal and non-isothermal processes. The crystallite morphology of nylon 1212, isothermally crystallized at various temperatures, was observed by polarized optical microscopy. The activation energies of crystallization under isothermal and non-isothermal conditions were also calculated based on different approaches.

Analysis of micro-failure behaviors in hybrid fiber model composites

Micro-failure modes and statistical fragment lengths in the hybrid fiber and non-hybrid reference composites in the uniaxial tension were investigated. Similiar to the reference experiments, fibers in hybrid strong interface/medium interface fiber composites display a decrease in aspect ratio and an increase in interfacial shear stress (IFSS) with the increase of inter-fiber spacing. While for the fibers with weak interfaces in the hybrid strong interface/weak interface fiber composites, the aspect ratio increases and IFSS decreases with enlargement of inter-fiber spacing, which is contrary to other systems. Finite element numerical analysis was used to interpret the special phenomena.