Analysis of Dopant distributions in LEC-InP
Data(s) |
1995
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Resumo |
It is often important to be able to estimate the concentration of dopant atoms incorporated into InP crystals grown from InP melt of given composition. In this paper we present a simple parameter (G) to revise the commonly used effective distribution coefficient (k(eff)) and the Scheil equation. The results obtained for various dopants and different initial concentrations in LEC-grown InP ingots are discussed. It is shown that the revised dopant concentration curves tally with the real distributions. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wei J .Analysis of Dopant distributions in LEC-InP ,CRYSTAL RESEARCH AND TECHNOLOGY,1995,30(8):1169-1178 |
Palavras-Chave | #半导体材料 #DIFFUSION #GROWTH #ZN |
Tipo |
期刊论文 |