934 resultados para complementary-metal-oxide semiconductor (CMOS) image sensor


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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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O uso de novas técnicas para estudar a evolução e preenchimento de vales incisos tem fornecido, ao longo dos anos, importantes resultados para entendermos como foi a evolução costeira brasileira. Neste contexto, esta tese teve como objetivo estudar a evolução do estuário do rio Coreaú, localizado no estado do Ceará, em diferentes escalas temporais, seja “Eventual” (meses, anos), “Engenharia” anos, decádas) e Geológica” (centenas, séculos, milênios), proposta por Cowell et al. (2003), com intuíto de avaliar se as transformações/alterações ao longo dos anos foram significativas ou não. Como resultados, obteve-se no primeiro objetivo, utilizando técnicas de sensoriamento remoto, a partir de imagens dos sensores TM, ETM+ e OLI do satélite Landsat 5,7 e 8 e LISS-3 do satélite ResourceSat-1 de 1985 a 2013, uma alteração mínima em relação a transformações morfológicas ao longo do estuário nos últimos 28 anos (entre as escalas Eventual e de Engenharia), houve neste período um acréscimo de 0,236 km2 (3%) de área, não trazendo sigificativas mudanças para o estuário. Em relação a taxa de sedimentação, correspondente ao segundo bjetivo, a partir da coleta de 9 testemunhos, de até 1 m de profundidade e utilizando o radionuclídeo 210Pb, ao longo do estuário, obteve-se uma taxa que variou de 0,33 cm/ano a 1 cm/ano (escalas entre Engenharia e Geológica) próximo a foz do estuário, e com uma rápida sedimentação percebida na margem leste do rio, onde encontram-se sedimentos mais recentes em relação a margem oeste. Em relação ao preenchimento, terceiro e último objetivo, a partir da amostragem de testemunhos de até 18 m de profundidade, utilzando o amostrador Rammkernsonden (RKS), foram gerados perfis e seções estratigráficas que ajudaram a entender o preenchimento do vale inciso do estuário do rio Coreaú e entender que trata-se de um estuário fluvio-marinho, preenchendo os vales formados no Grupo Barreiras nos últimos 10.000 anos antes do presente. Estas análises e resultados servirão como base para comparação com outros estuários, sejam fluviais, fluvio-marinhos ou marinhos, para entendermos melhor quais os possíveis eventos que dominaram a sedimentação ao longo da costa brasileira em diferentes escalas.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.

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Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 degrees C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiC(x)N(y) films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiC(x)N(y) films.

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The Bi-Sr-Ca-Cu-O system has been one of the most studied superconducting ceramic materials for industry applications. The most of the studies with this aim are on silver/ceramic composites, due to the benefits and great compatibility of this metal with the oxide. Tapes made by the powder in tube (PIT) method have been successfully tested in pilot power plants in many countries but in Brazil. In this paper, 5, 10, and 20-wt% silver powders are introduced to compose the core of the tape along with the Bi:2212 ceramic powder. The results of electrical experiments are compared with those made with no silver addition Ag tapes. The best current density, at 60 K and no applied magnetic field, was found for the 10-wt% silver proportion, doubling the value obtained for the tape with no silver in the core.

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Metal oxide nanocomposites were prepared by two different routes: polyol and sol-gel. Characterization by X ray diffraction showed that the first process produces directly a two-phase material, while the sol-gel powder never showed second phase below 600°C. Light spectroscopy of the treated powders indicated similarities for the processed materials. Although the overall material compositions are about the same, different structural characteristics are found for each processing. With the exception of Ti-Zn materials, all the double metal oxide powders showed higher absorbance than either TiO2 powder.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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The degradation behaviour of SnO(2)-based varistors (SCNCr) due to current pulses (8/20 mu s) is reported here for the first time in comparison with the ZnO-based commercial varistors (ZnO). Puncturing and/or cracking failures were observed in ZnO-based varistors possessing inferior thermo-mechanical properties in comparison with that found in a SCNCr system free of failures. Both systems presented electric degradation related to the increase in the leakage current and decrease in the electric breakdown field, non-linear coefficient and average value of the potential barrier height. However, it was found that a more severe degradation occurred in the ZnO-based varistors concerning their non-ohmic behaviour, while in the SCNCr system, a strong non-ohmic behaviour remained after the degradation. These results indicate that the degradation in the metal oxide varistors is controlled by a defect diffusion process whose rate depends on the mobility, the concentration of meta-stable defects and the amount of electrically active interfaces. The improved behaviour of the SCNCr system is then inferred to be associated with the higher amount of electrically active interfaces (85%) and to a higher energy necessary to activate the diffusion of the specific defects.

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The admittance spectra and current-voltage (I-V) characteristics are reported of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors employing cross-linked poly(amide-imide) (c-PAI) as the insulator and poly(3-hexylthiophene) (P3HT) as the active semiconductor. The capacitance of the MIM devices are constant in the frequency range from 10 Hz to 100 kHz, with tan delta values as low as 7 x 10(-3) over most of the range. Except at the lowest voltages, the I-V characteristics are well-described by the Schottky equation for thermal emission of electrons from the electrodes into the insulator. The admittance spectra of the MIS devices displayed a classic Maxwell-Wagner frequency response from which the transverse bulk hole mobility was estimated to be similar to 2 x 10(-5) cm(2) V(-1)s(-1) or similar to 5 x 10(-8) cm(2) V(-1)s(-1) depending on whether or not the surface of the insulator had been treated with hexamethyldisilazane (HMDS) prior to deposition of the P3HT. From the maximum loss observed in admittance-voltage plots, the interface trap density was estimated to be similar to 5 x 10(10) cm(-2) eV(-1) or similar to 9 x 10(10) cm(-2) eV(-1) again depending whether or not the insulator was treated with HMDS. We conclude, therefore, that HMDS plays a useful role in promoting order in the P3HT film as well as reducing the density of interface trap states. Although interposing the P3HT layer between the insulator and the gold electrode degrades the insulating properties of the c-PAI, nevertheless, they remain sufficiently good for use in organic electronic devices. (c) 2012 Elsevier B.V. All rights reserved.

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Silver containing heavy metal oxide glasses and glass ceramics of the system WO3-SbPO4-PbO-AgCl with different AgCl contents have been prepared and their thermal, structural and optical properties characterized. Glass ceramics containing metallic silver nanoparticles have been prepared by annealing glass samples at temperatures above the glass transition and analyzed by transmission electron microscopy and energy dispersive X-ray microanalysis. The presence of the metallic clusters has been also confirmed by the observation of a surface plasmon resonimce band in the visible range. Cyclic voltammetric measurements indicated the presence of metallic silver into the glasses, even before to perform the thermal treatment.