Effects of time exposure and low power sonochemical treatment on ZnO mesostructures


Autoria(s): Costa, B. C.; Morilla-Santos, C.; Lisboa-Filho, P. N.
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

21/10/2015

21/10/2015

01/07/2015

Resumo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Processo FAPESP: 2013/07296-2

A variety of technological applications related to oxide semiconductor-based devices has attracted great interest in the scientific community. Among these materials, zinc oxide (ZnO) has applications in several areas, from light-emitting diodes (LEDs), photovoltaic devices in solar cells and biomaterials. Furthermore, the possibility of application in technological devices highly depends on the synthesis routes employed. Within this context, we investigate the structural and morphological conformation of ZnO structures obtained by low power sonochemical treatment and the effects of time exposure on these mesostructures. To analyze such influences, two samples were prepared without sonochemical treatment with differences in the initial heat-treatment and gas-flux conditions. Another group of six samples was prepared with different time exposures (5, 15, 30, 60, 90 and 120 min) in a low power sonochemical treatment. All the prepared samples were characterized by the XRD associated to Rietveld refinement and SEM. The obtained results analyses indicated that sonochemical treatment was not a necessary condition to obtain highly ordered mesostructures, however, differences in time exposure led to structural and morphological modifications in the ZnO structures. Furthermore, it was observed that the use of vacuum assisted-thermal treatments promotes undesired second phase removal. (C) 2015 Elsevier Ltd. All rights reserved.

Formato

81-89

Identificador

http://www.sciencedirect.com/science/article/pii/S136980011500147X

Materials Science In Semiconductor Processing, v. 35, p. 81-89, 2015.

1369-8001

http://hdl.handle.net/11449/129434

http://dx.doi.org/10.1016/j.mssp.2015.02.058

WOS:000353855400012

Idioma(s)

eng

Publicador

Elsevier B.V.

Relação

Materials Science In Semiconductor Processing

Direitos

closedAccess

Palavras-Chave #Zinc oxide #Flower-like structures #Sonochernistry
Tipo

info:eu-repo/semantics/article