导模法生长晶体研究进展

导模法是一种极具应用潜力的晶体生长方法,具有生长速度快,加工成本低的优点,广泛用于生长各种形状的晶体。对导模法的原理、特点和发展历史进行了简单介绍,着重论述了导模法在生长有形蓝宝石和硅晶体中的发展和应用,对目前导模法生长晶体过程中存在的问题做了简单的介绍。

Growth of alpha-Al2O3:C crystal with highly sensitive optically stimulated luminescence

In this work. an alpha-Al2O3:C crystal was directly grown by the temperature gradient technique (TGT) using Al2O3 and graphite powders as the raw materials. The optical, optically stimulated luminescence (OSL) properties and dosimetric characteristics of as-grown crystal were investigated. As-grown alpha-Al2O3:C crystal shows strong absorption band at 205, 230 and 256 nm. Three-dimensional thermoluminescence (TL) emission spectrum of the crystal shows a single emission peak at similar to 415 nm. The OSL decay curve can be fitted to two exponentials, the faster component and the slower component. The OSL response of the crystal shows a linear-sublinear-saturation characteristic. As-grown alpha-Al2O3:C crystal shows excellent linearity in the dose range from 5 x 10(-6) to 50 Gy. For doses higher than the saturation dose (100 Gy). the OSL sensitivity decreases as the dose increases. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

飞秒脉冲激光器中色散补偿膜的设计

阐述了用光学薄膜进行色散补偿的基本原理，介绍了设计的基本过程．根据Ti：Sapphire飞秒激光器中腔内色散补偿的要求，设定了色散补偿目标，通过计算机优化，得到了一种40层的Ta2O5／SiO2介质膜系．该膜系能在720～870am范围获得大于99．5％的反射率，在510～550nm获得大于90％的透射率，在740～850nm提供较平滑的-40fs^2的群延迟色散．这样的结果经过7次反射后，可以补偿5-mm Ti：sapphire晶体产生的绝大部分群延迟色散。

Influence of LiB3O5 structure on microstructure and optical properties of ZrO2, thin films prepared by electron beam evaporation

ZrO2 thin films were deposited bill using an electron beam evaporation technique on three kinds of lithium triborate (LiB3O5 or LBO) substrates with the surfaces at specified crystalline orientations. The influences of the LBO structure on the structural and optical properties of ZrO2 thin films are studied by spectrophotometer and x-ray diffraction. The results indicate that the substrate structure has obvious effects on the structural end optical properties of the film: namely. the ZrO2 thin film deposited on the X-LBO, Y-LBO and Z-LBO orients to m(-212), m(021) and o(130) directions. It is also found that the ZrO2 thin film with m(021) has the highest refractive index and the least lattice misfit.

负色散镜的设计、制备及在掺钛蓝宝石激光谐振腔内的使用

根据钛宝石激光器的要求设计了性能优良的两种负色散镜（NDM1和NDM2）。NDM1同时引入啁啾效应和GT效应产生大的群延迟色散量以减少光在负色散镜上的反射次数。NDM2仅引入GT效应产生较小的群延迟色散以补偿腔内自相位调制带来的部分啁啾。选用离子束溅射法制备了这两种负色散镜。用分光光度计测试了它们的透射率。结果表明，所制备的负色散镜的性能与设计性能非常接近。使用这两种负色散镜进行掺钛蓝宝石激光谐振腔内色散补偿实现了飞秒脉冲锁模，获得了15fs的超短脉冲。

钛宝石激光器中用优化Gires-Tournois镜产生15fs脉冲

根据飞秒脉冲锁模钛宝石激光器脉冲压缩的要求，介绍了负色散镜补偿色散的基本原理及其特点。详细阐述了优化Gires-Tournois(OG-T)镜的设计过程，并通过计算机优化得到理想设计膜系。采用离子束溅射的方法镀制了优化Gires—Tournois镜。测量了优化Gires-Tournois镜(编号为OGT#1)的透射率和群延迟色散，并与设计值进行了比较，分析了实测值产生偏差的原因，从而对镀膜参量进行了相应的调整，制造了第二批优化Gires—Tournois镜(编号为OGT#2)。将优化Gires—Tourn

用于掺钛蓝宝石激光系统的高反膜的激光损伤

用电子束蒸发制备了用于掺钛蓝宝石啁啾脉冲放大激光系统的TiO2/HfO2/SiO2高反膜，其带宽约为176nm（R>98%, λ0=800nm），激光损伤阈值（LIDT）为2.4 J/cm2。通过TiO2和HfO2单层膜的透过光谱计算了这两种材料的折射率和消光系数。高反膜的性能主要由高折射率材料决定：折射率越高，反射带越宽；消光系数越小，薄膜吸收越小，LIDT越高。最后，讨论了高反膜的激光损伤机制。

单脉冲飞秒脉冲激光对单层和高反光学薄膜的损伤

用电子柬蒸发的方法在BK7玻璃上制备了ZrO2单层膜和ZrO2／SiO2高反膜，利用掺Ti：sapphire飞秒激光系统输出的中心波长为800nm，脉宽为50fs的激光脉冲对这两种样品进行了激光损伤阈值测试．实验结果表明，ZrO2单层膜的阂值比ZrO2／SiO2高反膜的高；这与传统的纳秒脉冲激光的损伤情况相反．利用光离化和碰撞离化激发电子到导带，形成电子等离子体基本模型并对此现象进行了解释．同时，用显微镜对样品的损伤形貌进行了观测，对损伤的特点进行了表征．

Design of high-efficiency diffraction gratings based on rigorous coupled-wave analysis for 800nm wavelength

We report on the design of a high diffraction efficiency multi-layer dielectric grating with wide incident angle and broad bandwidth for 800 nm. The optimized grating can achieve > 95% diffraction efficiency in the first order at an incident angle of 5 degrees from Littrow and a wavelength from 770nm to 830 nm, with peak diffraction efficiency of > 99.5% at 800 nm. The electric field distribution of the optimized multi-layer dielectric grating within the gratings ridge is 1.3 times enhancement of the incidence light, which presents potential high laser resistance ability. Because of its high-efficiency, wide incident, broad bandwidth and potential high resistance ability, the multi-layer dielectric grating should have practical application in Ti:sapphire laser systems.

Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.

Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.

Direct observation of the structural component of the metal-insulator phase transition and growth habits of epitaxially grown VO2 nanowires.

We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.

MDNR-NOAA trawl standardization study

Long-term living resource monitoring programs are commonly conducted globally to evaluate trends and impacts of environmental change and management actions. For example, the Woods Hole bottom trawl survey has been conducted since 1963 providing critical information on the biology and distribution of finfish and shellfish in the North Atlantic (Despres-Patango et al. 1988). Similarly in the Chesapeake Bay, the Maryland Department of Natural Resources (MDNR) Summer Blue Crab Trawl survey has been conducted continuously since 1977 providing management-relevant information on the abundance of this important commercial and recreational species. A key component of monitoring program design is standardization of methods over time to allow for a continuous, unbiased data set. However, complete standardization is not always possible where multiple vessels, captains, and crews are required to cover large geographic areas (Tyson et al. 2006). Of equal issue is technological advancement of gear which serves to increase capture efficiency or ease of use. Thus, to maintain consistency and facilitate interpretation of reported data in long-term datasets, it is imperative to understand and quantify the impacts of changes in gear and vessels on catch per unit of effort (CPUE). While vessel changes are inevitable due to ageing fleets and other factors, gear changes often reflect a decision to exploit technological advances. A prime example of this is the otter trawl, a common tool for fisheries monitoring and research worldwide. Historically, trawl nets were constructed of natural materials such as cotton and linen. However modern net construction consists of synthetic materials such as polyamide, polyester, polyethylene, and polypropylene (Nielson et. al. 1983). Over the past several decades, polyamide materials which will be referred to as nylon, has been a standard material used in otter trawl construction. These trawls are typically dipped into a latex coating for increased abrasion resistance, a process that is referred to as “green dipped.” More recently, polyethylene netting has become popular among living resource monitoring agencies. Polyethylene netting, commonly known as sapphire netting, consists of braided filaments that form a very durable material more resistant to abrasion than nylon. Additionally, sapphire netting allows for stronger knot strength during construction of the net further increasing the net’s durability and longevity. Also, sapphire absorbs less water with a specific gravity near 0.91 allowing the material to float as compared to nylon with specific gravity of 1.14 (Nielson et. al. 1983). This same property results in a light weight net which is more efficient in deployment, retrieval and fishing of the net, particularly when towing from small vessels. While there are many advantages to the sapphire netting, no comparative efficiency data is available for these two trawl net types. Traditional nylon netting has been used consistently for decades by the MDDNR to generate long term living resource data sets of great value. However, there is much interest in switching to the advanced materials. In addition, recent collaborative efforts between MDNR and NOAA’s Cooperative Oxford Laboratory (NOAA-COL) require using different vessels for trawling in support of joint projects. In order to continue collaborative programs, or change to more innovative netting materials, the influence of these changes must be demonstrated to be negligible or correction factors determined. Thus, the objective of this study was to examine the influence of trawl net type, vessel type, and their interaction on capture efficiency.

Application of electron beams in thermal processing of semiconductor materials and devices

Rapid and effective thermal processing methods using electron beams are described in this paper. Heating times ranging from a fraction of a second to several seconds and temperatures up to 1400°C are attainable. Applications such as the annealing of ion implanted material, both without significant dopant diffusion and with highly controlled diffusion of impurities, are described. The technique has been used successfully to activate source/drain regions for fine geometry NMOS transistors. It is shown that electron beams can produce localised heating of semiconductor substrates and a resolution of approximately 1 μm has been achieved. Electron beam heating has been applied to improving the crystalline quality of silicon-on sapphire used in CMOS device fabrication. Silicon layers with defect levels approaching bulk material have been obtained. Finally, the combination of isothermal and selective annealing is shown to have application in recrystallisation of polysilicon films on an insulating layer. The approach provides the opportunity of producing a silicon-on-insulator substrate with improved crystalline quality compared to silicon-on-sapphire at a potentially lower cost. It is suggested that rapid heating methods are expected to provide a real alternative to conventional furnace processing of semiconductor devices in the development of fabrication technology. © 1984 Benn electronics Publications Ltd, Luton.

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

A noncatalytic chemical vapor deposition mechanism is proposed, where high precursor concentration, long deposition time, high temperature, and flat substrate are needed to grow large-area nanocrystalline graphene using hydrocarbon pyrolysis. The graphene is scalable, uniform, and with controlled thickness. It can be deposited on virtually any nonmetallic substrate that withstands ∼1000 °C. For typical examples, graphene grown directly on quartz and sapphire shows transmittance and conductivity similar to exfoliated or metal-catalyzed graphene, as evidenced by transmission spectroscopy and transport measurements. Raman spectroscopy confirms the sp 2-C structure. The model and results demonstrate a promising transfer-free technique for transparent electrode production. © 2012 American Institute of Physics.

Tests for conceptual design of 6.6 kV class superconducting fault current limiter with YBCO thin film elements

A superconducting fault current limiter (SFCL) for 6.6 kV and 400 A installed in a cubicle for a distribution network substation was conceptually designed. The SFCL consists of parallel- and series-connected superconducting YBCO elements and a limiting resistor. Before designing the SFCL, some tests were carried out. The width and length of each element used in the tests are 30 mm and 210 mm, respectively. The element consists of YBCO thin film of about 200 nm in thickness on cerium dioxide (CeO2) as a cap-layer on a sapphire substrate by metal-organic deposition with a protective metal coat. In the tests, characteristics of each element, such as over-current, withstand-voltage, and so on, were obtained. From these characteristics, series and parallel connections of the elements, called units, were considered. The characteristics of the units were obtained by tests. From the test results, a single phase prototype SFCL was manufactured and tested. Thus, an SFCL rated at 6.6 kV and 400 A can be designed. © 2009 IEEE.