Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots

The structure and optical properties of In(Ga)As with the introduction of InGaAlAs or InAlAs seed dot layers are investigated. The area density and size homogeneity of the upper InGaAs dots are efficiently improved by the introduction of a buried layer of high-density dots. Our explanation for the realization of high density and size homogeneity dots is presented. When the GaAs spacer layer is too thin to cover the seed dots, the upper dots exhibit some optical properties like those of a quantum well. By analyzing the growth dynamics, we refer to this kind of dot as an empty-core dot. (C) 2003 American Institute of Physics.

Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer

The structure and optical properties of In(Ga)As grown with the introduction of InGaAlAs or InAlAs seed dots layers are investigated. The area density and size homogeneity of the upper InGaAs dots are efficiently improved with the introduction of a layer of high-density buried dots. When the GaAs spacer layer is too thin to cover the seed dots, the upper dots exhibit the characterization of a quantum well. By analyzing the growth dynamics, we refer to it as an empty-core structure dot. (C) 2002 Elsevier Science B.V. All rights reserved.

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots

The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. (C) 2000 American Institute of Physics. [S0021-8979(00)08922-2].

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

A New Discrimination Method of Maize Seed Varieties Based on Near-Infrared Spectroscopy

A new discrimination method for the maize seed varieties based on the near-infrared spectroscopy was proposed. The reflectance spectra of maize seeds were obtained by a FT-NIR spectrometer (12 000-4 000 cm(-1)). The original spectra data were preprocessed by first derivative method. Then the principal component analysis (PCA) was used to compress the spectra data. The principal components with the cumulate reliabilities more than 80% were used to build the discrimination models. The model was established by Psi-3 neuron based on biomimetic pattern recognition (BPR). Especially, the parameter of the covering index was proposed to assist to discriminating the variety of a seed sample. The authors tested the discrimination capability of the model through four groups of experiments. There were 10, 18, 26 and 34 varieties training the discrimination models in these experiments, respectively. Additionally, another seven maize varieties and nine wheat varieties were used to test the capability of the models to reject the varieties not participating in training the models. Each group of the experiment was repeated three times by selecting different training samples at random. The correct classification rates of the models in the four-group experiments were above 91. 8%. The correct rejection rates for the varieties not participating in training the models all attained above 95%. Furthermore, the performance of the discrimination models did not change obviously when using the different training samples. The results showed that this discrimination method can not only effectively recognize the maize seed varieties, but also reject the varieties not participating in training the model. It may be practical in the discrimination of maize seed varieties.

Seed bubbles stabilize flow and heat transfer in parallel microchannels

Seed bubbles are generated on microheaters located at the microchannel upstream and driven by a pulse voltage signal, to improve flow and heat transfer performance in microchannels. The present study investigates how seed bubbles stabilize flow and heat transfer in micro-boiling systems. For the forced convection flow, when heat flux at the wall surface is continuously increased, flow instability is self-sustained in microchannels with large oscillation amplitudes and long periods. Introduction of seed bubbles in time sequence improves flow and heat transfer performance significantly. Low frequency (similar to 10 Hz) seed bubbles not only decrease oscillation amplitudes of pressure drops, fluid inlet and outlet temperatures and heating surface temperatures, but also shorten oscillation cycle periods. High frequency (similar to 100 Hz or high) seed bubbles completely suppress the flow instability and the heat transfer system displays stable parameters of pressure drops, fluid inlet and outlet temperatures and heating surface temperatures. Flow visualizations show that a quasi-stable boundary interface from spheric bubble to elongated bubble is maintained in a very narrow distance range at any time. The seed bubble technique almost does not increase the pressure drop across microsystems, which is thoroughly different from those reported in the literature. The higher the seed bubble frequency, the more decreased heating surface temperatures are. A saturation seed bubble frequency of 1000-2000 Hz can be reached, at which heat transfer enhancement attains the maximum degree, inferring a complete thermal equilibrium of vapor and liquid phases in microchannels. Benefits of the seed bubble technique are the stabilization of flow and heat transfer, decreasing heating surface temperatures and improving temperature uniformity of the heating surface.

OPTICAL BISTABILITY IN A GAAS/GAALAS MULTI-QUANTUM-WELL (MQW) SELF-ELECTROOPTIC EFFECT DEVICE (SEED)

Based on a GaAs/GaAlAs MQW pin structure grown by a home-made MBE system, we have successfully fabricated a SEED. The optical bistability and related properties of the device under symmetric operation (S-SEED) and asymmetric operation are reported.

InGaAs/GaAs多量子阱SEED设计和特性研究

分析计算了InGaAs/GaAs多量子阱(SEED)的激子吸收行为,对器件的多量子阱及谐振腔结构进行了设计和理论分析, 用MOCVD系统生长了多量子阱外延材料,并且对器件的反射谱和光电流谱特性进行了测试。

InGaAs/GaAs多量子阱 SEED面阵结构特性与设计（英文）

讨论了谐振腔中的DBR对InGaAs/GaAs多量子阱SEED面阵光反射特性的影响。采用InGaAs/GaAs作为多量子阱SEED器件的有源区，从而获得了980nm工作波长。设计和分析了InGaAs/GaAs多量子阱SEED中的一种用于倒装焊的新型谐振腔结构。多量子阱材料是用MOCVD系统生长，利用微区光反射谱、PL谱以及X射线双晶衍射对多量子阱材料进行了测量和分析，测量结果表明多量子阱材料具有良好的质量，证明了器件结构的设计和分析是准确的。

Multiple Quantum Well SEED Arrays for Flip-Chip Bonding Optoelectronic Smart Pixels

于2010-11-23批量导入

GaAs/AlGaAs多量子阱FET-SEED灵巧象元

将GaAs/AlGaAs多量子阱光探测器、光调制器与GaAs场效应晶体管(FET)混合集成,构成FET-SEED灵巧像元光探测器和光调制器均为反射型自电光效应器件(SEED),光源为量子阱半导体激光器。光输入信号对光输出信号有明显的调制作用,可以导致光输出信号较大的变化。

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.