Tailoring the Microstructural, Optical, and Electrical Properties of Nanocrystalline WO3 Thin Films Using Al Doping

We have studied the influence of Al doping on the microstructural, optical, and electrical properties of spray-deposited WO3 thin films. XRD analyses confirm that all the films are of polycrystalline WO3 in nature, possessing monoclinic structure. EDX profiles of the Al-doped films show aluminum peaks implying incorporation of Al ions into WO3 lattice. On Al doping, the average crystallite size decreases due to increase in the density of nucleation centers at the time of film growth. The observed variation in the lattice parameter values on Al doping is attributed to the incorporation of Al ions into WO3 lattice. Enhancement in the direct optical band gap compared to the undoped film has been observed on Al doping due to decrease in the width of allowed energy states near the conduction band edge. The refractive indices of the films follow the Cauchy relation of normal dispersion. Electrical resistivity compared to the undoped film has been found to increase on Al doping.

Temperature-dependent stability of stacking faults in Al, Cu and Ni: first-principles analysis

We present comparative analysis of microscopic mechanisms relevant to plastic deformation of the face-centered cubic (FCC) metals Al, Cu, and Ni, through determination of the temperature-dependent free energies of intrinsic and unstable stacking faults along 1 (1) over bar 0] and 1 (2) over bar 1] on the (1 1 1) plane using first-principles density-functional-theory-based calculations. We show that vibrational contribution results in significant decrease in the free energy of barriers and intrinsic stacking faults (ISFs) of Al, Cu, and Ni with temperature, confirming an important role of thermal fluctuations in the stability of stacking faults (SFs) and deformation at elevated temperatures. In contrast to Al and Ni, the vibrational spectrum of the unstable stacking fault (USF1 (2) over bar 1]) in Cu reveals structural instabilities, indicating that the energy barrier (gamma(usf)) along the (1 1 1)1 (2) over bar 1] slip system in Cu, determined by typical first-principles calculations, is an overestimate, and its commonly used interpretation as the energy release rate needed for dislocation nucleation, as proposed by Rice (1992 J. Mech. Phys. Solids 40 239), should be taken with caution.

Experimental and theoretical studies on static and dynamic pressure-concentration isotherms of MmNi(5-x)Al(x) (x=0, 0.3, 0.5 and 0.8) hydrides

The static and dynamic pressure concentration isotherms (PCIs) of MmNi(5-x)Al(x). (x = 0, 0.3, 0.5 and 0.8) hydrides were measured at different temperatures using volumetric method. The effect of Al substitution on PCI and thermodynamic properties were studied. The plateau pressure and maximum hydrogen storage capacity decreased with Al content whereas reaction enthalpy increased. The plateau pressure, plateau slope and hysteresis effect was observed more for dynamic PCIs compared to static PCIs. Different mathematical models used for metal hydride-based thermodynamic devices simulation are compared to select suitable model for static and dynamic PCI simulation of MmNi(5)-based hydrides. Few important physical coefficients (partial molar volume, reaction enthalpy, reaction entropy, etc.) useful for development of thermodynamic devices were estimated. A relation has been proposed to correlate aluminium content and physical coefficients for the prediction of unknown PCI. The simulated and experimental PCIs were found matching closely for both static and dynamic conditions. Copyright (C) 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

Finite Element Analysis of Stress Evolution in Al-Si Alloy

A 2D multi-particle model is carried out to understand the effect of microstructural variations and loading conditions on the stress evolution in Al-Si alloy under compression. A total of six parameters are varied to create 26 idealized microstructures: particle size, shape, orientation, matrix temper, strain rate, and temperature. The effect of these parameters is investigated to understand the fracture of Si particles and the yielding of Al matrix. The Si particles are modeled as a linear elastic solid and the Al matrix is modeled as an elasto-plastic solid. The results of the study demonstrate that the increase in particle size decreases the yield strength of the alloy. The particles with high aspect ratio and oriented at 0A degrees and 90A degrees to the loading axis show higher stress values. This implies that the particle shape and orientation are dominant factors in controlling particle fracture. The heat treatment of the alloy is found to increase the stress levels of both particles and matrix. Stress calculations also show that higher particle fracture and matrix yielding is expected at higher strain rate deformation. Particle fracture decreases with increase in temperature and the Al matrix plays an important role in controlling the properties of the alloy at higher temperatures. Further, this strain rate and temperature dependence is more pronounced in the heat-treated microstructure. These predictions are consistent with the experimentally observed Si particle fracture in real microstructure.

An insight to the low temperature conduction mechanism of c-axis grown Al-doped ZnO, a widely used transparent conducting oxide

Al-doped ZnO thin films were synthesized from oxygen reactive co-sputtering of Al and Zn targets. Explicit doping of Al in the highly c-axis oriented crystalline films of ZnO was manifested in terms of structural optical and electrical properties. Electrical conduction with different extent of Al doping into the crystal lattice of ZnO (AZnO) were characterized by frequency dependent (40 Hz-50 MHz) resistance. From the frequency dependent resistance, the ac conduction of them, and correlations of localized charge particles in the crystalline films were studied. The dc conduction at the low frequency region was found to increase from 8.623 mu A to 1.14 mA for the samples AZnO1 (1 wt% Al) and AZnO2 (2 wt% Al), respectively. For the sample AZnO10 (10 wt% Al) low frequency dc conduction was not found due to the electrode polarization effect. The measure of the correlation length by inverse of threshold frequency (omega(0)) showed that on application of a dc electric field such length decreases and the decrease in correlation parameter(s) indicates that the correlation between potentials wells of charge particles decreases for the unidirectional nature of dc bias. The comparison between the correlation length and the extent of correlation in the doped ZnO could not be made due to the observation of several threshold frequencies at the extent of higher doping. Such threshold frequencies were explained by the population possibility of correlated charge carriers that responded at different frequencies. For AZnO2 (2% Al), the temperature dependent (from 4.5 to 288 K) resistance study showed that the variable range hopping mechanism was the most dominating conduction mechanism at higher temperature whereas at low temperature region it was influenced by the small polaronic hopping conduction mechanism. There was no significant influence found in these mechanisms on applications of 1, 2 and 3 V as biases.

Determination of band offsets at the Al:ZnO/Cu2SnS3 interface using X-ray photoelectron spectroscopy

The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical properties of the semiconductor materials were studied. The band offset at the Al:ZnO/Cu2SnS3 heterojunction was studied using X-ray photoelectron spectroscopy technique. From the measurement of the core level energies and valence band maximum of the constituent elements, the valence band offset was calculated to be -1.1 +/- 0.24 eV and the conduction band offset was 0.9 +/- 0.34 eV. The band alignment at the heterojunction was found to be of type-I. The study of Al:ZnO/Cu2SnS3 heterojunction is useful for solar cell applications. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Fractal Pattern Formation In Anodic Bonding Of Pyrex Glass/Al/Si

Anodic bonding of Pyrex glass/Al/Si is an important bonding technique in micro/nanoelectromechanical systems (MEMS/NEMS) industry. The anodic bonding of Pyrex 7740 glass/Aluminum film/Silicon is completed at the temperature from 300 degrees C to 375 degrees C with a bonding voltage between 150 V and 450 V. The fractal patterns are formed in the intermediate Al thin film. This pattern has the fractal dimension of the typical two-dimensional diffusion-limited aggregation (2D DLA) process, and the fractal dimension is around 1.7. The fractal patterns consist of Al and Si crystalline grains, and their occurrences are due to the limited diffusion, aggregation, and crystallization of Si and Al atoms in the intermediate Al layers. The formation of the fractal pattern is helpful to enhance the bonding strength between the Pyrex 7740 glass and the aluminum thin film coated on the crystal silicon substrates.

Adenylate Cyclase Toxin Promotes Internalisation of Integrins and Raft Components and Decreases Macrophage Adhesion Capacity

10 p.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.

The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis

We have investigated the growth of AlGaN epilayers on a sapphire substrate by metalorganic chemical vapour deposition using various low-temperature ( LT) AlN buffer thicknesses. Combined scanning electron microscopy and cathodoluminescence investigations reveal the correlation between the surface morphology and optical properties of AlGaN films in a microscopic scale. It is found that the suitable thickness of the LT AlN buffer for high quality AlGaN growth is around 20 nm. The Al compositional inhomogeneity of the AlGaN epilayer is attributed to the low lateral mobility of Al adatoms on the growing surface.

Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films

The valence band structures of Al-N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al-N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. Al-N increased the relative quantity of Zn-N in ZnO:(Al, N), while N-N decreased that of Zn-N in ZnO:N. (c) 2006 American Institute of Physics.

Study on the hydrolysis/precipitation behavior of Keggin Al-13 and Al-30 polymers in polyaluminum solutions

The hydrolysis/precipitation behaviors of Al3+, Al-13 and Al-30 under conditions typical for flocculation in water treatment were investigated by studying the particulates' size development, charge characteristics, chemical species and speciation transformation of coagulant hydrolysis precipitates. The optimal pH conditions for hydrolysis precipitates formation for AlCl3, PAC(A113) and PAC(A130) were 6.5-7.5, 8.5-9.5, and 7.5-9.5, respectively. The precipitates' formation rate increased with the increase in dosage, and the relative rates were AlCl3 >> PAC(A130) > PACA113. The precipitates' size increased when the dosage increased from 50 mu M to 200 mu M, but it decreased when the dosage increased to 800 AM. The Zeta potential of coagulant hydrolysis precipitates decreased with the increase in pH for the three coagulants. The isoelectric points of the freshly formed precipitates for AlCl3, PAC(A113) and PAC(A130) were 7.3, 9.6 and 9.2, respectively. The Zeta potentials of AlCl3 hydrolysis precipitates were lower than those of PAC(A113) and PAC(A130) when pH > 5.0. The Zeta potential of PAC(A130) hydrolysis precipitates was higher than that of PACA113 at the acidic side, but lower at the alkaline side. The dosage had no obvious effect on the Zeta potential of hydrolysis precipitates under fixed pH conditions. The increase in Zeta potential with the increase in dosage under uncontrolled pH conditions was due to the pH depression caused by coagulant addition. Al-Ferron research indicated that the hydrolysis precipitates of AlCl3 were composed of amorphous AI(OH)3 precipitates, but those of PACA113 and PACA130 were composed of aggregates of Al-13 and Al-30, respectively. Al3+ was the most un-stable species in coagulants, and its hydrolysis was remarkably influenced by solution pH. Al-13 and Al-30 species were very stable, and solution pH and aging had little effect on the chemical species of their hydrolysis products. The research method involving coagulant hydrolysis precipitates based on Al-Ferron reaction kinetics was studied in detail. The Al species classification based on complex reaction kinetic of hydrolysis precipitates and Ferron reagent was different from that measured in a conventional coagulant assay using the Al--Ferron method. The chemical composition of Al-a, Al-b and Al-c depended on coagulant and solution pH. The Al-b measured in the current case was different from Keggin Al-13, and the high Alb content in the AlCl3 hydrolysis precipitates could not used as testimony that most of the Al3+ Was converted to highly charged Al-13 species during AlCl3 coagulation.

On the acid-base stability of Keggin Al-13 and Al-30 polymers in polyaluminum coagulants

The acid-base stabilities of Al-13 and Al-30 in polyaluminum coagulants during aging and after dosing into water were studied systematically using batch and flow-through acid-base titration experiments. The acid decomposition rates of both Al-13 and Al-30 increase rapidly with the decrease in solution pH. The acid decompositions of Al-13 and Al-30 with respect to H+ concentration are composed of two parallel first-order and second-order reactions, and the reaction orders are 1.169 and 1.005, respectively. The acid decomposition rates of Al-13 and Al-30 increase slightly when the temperature increases from 20 to ca. 35 A degrees C, but decrease when the temperature increases further. Al-30 is more stable than Al-13 in acidic solution, and the stability difference increases as the pH decreases. Al-30 is more possible to become the dominant species in polyaluminum coagulants than Al-13. The acid catalyzed decomposition and followed by recrystallization to form bayerite is one of the main processes that are responsible for the decrease of Al-13 and Al-30 in polyaluminum coagulants during storage. The deprotonation and polymerization of Al-13 and Al-30 depend on solution pH. The hydrolysis products are positively charged, and consist mainly of repeated Al-13 and Al-30 units rather than amorphous Al(OH)(3) precipitates. Al-30 is less stable than Al-13 upon alkaline hydrolysis. Al-13 is stable at pH < 5.9, while Al-30 lose one proton at the pH 4.6-5.75. Al-13 and Al-30 lose respective 5 and 10 protons and form [Al-13] (n) and [Al-30] (n) clusters within the pH region of 5.9-6.25 and 5.75-6.65, respectively. This indicates that Al-30 is easier to aggregate than Al-13 at the acidic side, but [Al-13] (n) is much easier to convert to Alsol-gel than [Al-30] (n) . Al-30 possesses better characteristics than Al-13 when used as coagulant because the hydrolysis products of Al-30 possess higher charges than that of Al-13, and [Al-30] (n) clusters exist within a wider pH range.

INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL

The composition and microstructure of buried layers of AlN formed by high energy N+ ion implantation into polycrystalline Al have been determined. Both bulk and evaporated thin films of Al have been implanted with 100 and 200 keV N+ ions to doses of up to 1.8 x 10(18)/cm2. The layers have been characterised using SIMS, XTEM, X-ray diffraction, FTIR, RBS and in terms of their microhardness. It is found that, for doses greater than the critical dose, buried, polycrystalline AlN layers are formed with preferred (100) or (002) orientations, which are sample specific. With increasing dose the nitrogen concentration saturates at the value for stoichiometric AlN although the synthesised compound is found to be rich in oxygen.

PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI

Using photoemission spectroscopy and Auger electron spectroscopy, the interfacial formation process and the reactions between Al and hydrogenated amorphous Si are probed, and annealing behaviors of the Al/a-Si:H system are investigated as well. It is found that a three-dimensional growth of Al metal clusters which includes reacted Al and non-reacted metal Al occurs at the initial Al deposition time, reacted Al and Si alloyed layers exist in the Al/a-Si:H interface, and non-reacted Al makes layer-by-layer growth forming a metal Al layer on the sample surface. The interfacial reactions and element interdiffusion of Al/a-Si:H are promoted under the vacuum annealing.