Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films
Data(s) |
2006
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Resumo |
The valence band structures of Al-N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al-N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. Al-N increased the relative quantity of Zn-N in ZnO:(Al, N), while N-N decreased that of Zn-N in ZnO:N. (c) 2006 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Cong GW; Peng WQ; Wei HY; Han XX; Wu JJ; Liu XL; Zhu QS; Wang ZG; Lu JG; Ye ZZ; Zhu LP; Qian HJ; Su R; Hong CH; Zhong J; Ibrahim K; Hu TD .Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films ,APPLIED PHYSICS LETTERS,2006,88(6):Art.No.602110 |
Palavras-Chave | #半导体材料 #P-TYPE CONDUCTION #THIN-FILMS #OHMIC CONTACTS |
Tipo |
期刊论文 |