High-Q and High-extinction-ratio Microdisk Add-drop Filter with Grating Couplers in Silicon-on-Insulator

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LD side-pumped high beam quality passive Q-switched and mode-locked Nd:YAG laser based on SESAM

We report a LD side-pumped fundamental-mode (Mx(2) = 1.35 and My(2) = 1.27) passive Q-switched and mode-locked Nd:YAG laser based on a semiconductor saturable absorber mirror (SESAM). At a pump current of 12.5 A, the average output power of 5.68 W with 80 kHz repetition rate and 2 mu s pulse width of the Q-switched envelope was generated. The repetition rate of the mode-locked pulse within the Q-switched envelope of 88 MHz was achieved.

Q的线性密码分析

对NESSIE公布的17个分组密码之一的Q进行了线性密码分析，攻击所需的数据复杂不大于2^118(相应的成功率为0．785），空间复杂度不大于2^33+2^19+2^18+2^12+2^11+2^10。此结果显示Q对线性密码分析是不免疫的。

OnceAS/Q:一个面向QoS的Web应用服务器

网络分布计算环境下应用系统的需求多样化和复杂性的增长,要求位于中间件层次的Web应用服务器(web application server,简称WAS)从原来的尽力而为服务模型转变为服务质量(quality of service,简称QoS)保障模型,为具有不同需求的应用分别提供适宜的服务质量保障.目前的WAS系统在此方面仍然比较薄弱.OnceAS/Q是一个面向QoS的WAS系统,它以QoS规约为基础,为不同应用提供不同的QoS保障能力.OnceAS/Q实现了一个应用QoS保障框架,提供了一组QoS服务组件支持具有QoS需求的应用开发和运行.介绍了OnceAS/Q的体系结构和主要组件,详细阐述了两个关键问题,一是QoS规约的定义及其映射,另一个是面向QoS的服务组件和资源的动态重配.OnceAS/Q原型在Ecperf测试基准下,对其QoS保障能力进行了实验.实验数据表明,在较大规模的应用环境下,OnceAS/Q能够提供更好的服务质量,并且开销是可接受的.

MALDI-TOF质谱技术在高聚物分析中的应用及新基质的筛选

利用MALDI-TOF质谱研究了非极性高聚物PS，通过此研究获得了PS的分子量、分子量分布和重复单元等信息。同时利用同位素分析和PSD-MALDI-TOF质谱证明了[M+Ag3]+的存在。并在此基础上，推断出了PS的端基结构信息，这在大分子高聚物端基分析方面尚属首次。 利用MALDI-TOF质谱研究了MALDI条件下四种黄酮类化合物在银簇合离子形成过程中的作用以及影响。结果表明，有机物中对紫外区激光有较强吸收的不饱和结构、影响有机物离子化的基团以及影响π-d共轭的空间位阻效应的基团都是影响银簇合离子形成的重要因素。 利用MALDI-TOF质谱结合PSD-MALDI-TOF碎片信息对两嵌段共聚物MPEG-PCL进行了研究。准确地分析了嵌段共聚物的嵌段长度和嵌段分布情况，为更好地认识和应用这类嵌段共聚物提供了重要的依据，同时也建立了分析这类嵌段共聚物的方法。 利用MALDI-TOF 质谱对具有特异物化性能的共聚物—超支化聚酯酰胺进行了研究。通过对质谱结果的分析，揭示了聚合过程中出现的多种现象及产生这些现象的原因，这对优化此类超支化聚酯酰胺的反应条件有着非常重要的意义。 结合基质的应用现状和作为基质应具备的条件，对六种含有酚羟基的弱酸性黄酮类化合物进行了筛选研究。讨论了它们成为基质的可能性以及它们在MALDI-TOF质谱实验中的应用表现，确定了其中四种黄酮类化合物可以作为有效的基质。 总结了MALDI-TOF质谱分析特殊样品的思路与经验，有些种类的样品是首次得到成功地分析。这对从事MALDI-TOF质谱分析的工作者有一定的参考价值，同时也对开拓MALDI-TOF质谱分析的应用范围有着极其重要的意义。

On-Chip All-Optical Passive 3.55 Gbit/s NRZ-to-PRZ Format Conversion Using a High-Q Silicon-Based Microring Resonator

We report the experimental result of all-optical passive 3.55 Gbit/s non-return-to-zero (NRZ) to pseudo-return-to-zero (PRZ) format conversion using a high-quality-factor (Q-factor) silicon-based microring resonator notch filter on chip. The silicon-based microring resonator has 23800 Q-factor and 22 dB extinction ratio (ER), and the PRZ signals has about 108 ps width and 4.98 dB ER.

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.

Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd ! YVO, 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7. 5 W, 2. 81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37. 5% , and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.

中间镜式半导体可饱和吸收镜在Nd:YVO_4激光器中被动调Q特性研究

利用一种新型的中间镜式半导体可饱和吸收镜，成功实现了二极管泵浦Nd

低温生长GaAs在Nd:YVO4激光器中调Q特性的研究

采用一种新型的被动调Q饱和吸收体,低温生长GaAs薄膜,实现了半导体抽运Nd:YVO4激光器的调Q运转.研究了激光器的调Q特性,调Q抽运阈值为2W.在抽运功率9.2 W时,获得的最短脉冲半峰全宽为15 ns,最大单脉冲能量为4.84 μJ,最高峰值功率为330 W,最大平均输出功率为1.16 W;脉冲重复频率在220 kHz到360 kHz之间.