990 resultados para PD(110)


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不同电荷态低速离子(Arq+,Pbq+)轰击Si(110)晶面,测量不同入射角情况下的次级粒子的产额.通过比较溅射产额与入射角的关系,证实沟道效应的存在.高电荷态离子与Si相互作用产生的沟道效应说明溅射产额主要是由动能碰撞引起的.在小角入射条件下,高电荷态离子能够增大溅射产额.当高电荷态离子以40°—50°入射时,存在势能越高溅射产额越大的势能效应.

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报道了利用兰州重离子加速器国家实验室ECR源引出的高电荷态离子207Pbq+(24≤q≤36)入射到Si(110)表面产生的电子发射的实验测量结果.结果表明,高电荷态离子与固体表面相互作用产生的电子发射产额Y与入射离子的电荷态q、入射角度ψ和入射能量E都有很强的关联.首次发现,电子发射产额Y与入射角度ψ间有接近1/tanψ的关系.理论分析认为,这些过程与基于经典过垒模型的势能电子发射过程密切相关.

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通过58 Ni(40 Ca ,3n2p)反应合成等待点核93 Pd ,采用氦喷嘴带传输系统加p γ符合 ,观测到了它的 β缓发质子衰变 ,测得其半衰期为 (1.3± 0 .2 )s .采用统计模型计算拟合了实验测得的 β缓发质子能谱和布居到质子发射体子核不同终态的分支比 ,指认了93 Pd的基态自旋为 9 2 .用Woods XasonStrutinsky方法计算了93 Pd的核位能面 ,其结果表明93 Pd基态自旋宇称可能为 9 2 + .

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不同电荷态低速离子(Arq+,Pbq+)轰击Si(110)晶面,测量不同入射角情况下的次级粒子的产额. 通过比较溅射产额与入射角的关系,证实沟道效应的存在. 高电荷态离子与Si相互作用产生的沟道效应说明溅射产额主要是由动能碰撞引起的. 在小角入射条件下,高电荷态离子能够增大溅射产额. 当高电荷态离子以40°—50°入射时,存在势能越高溅射产额越大的势能效应.

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The electron emission induced by highly charged ions Pb-207(q+) (24 <= q <= 36) interacting with Si(110) surface is reported. The result shows that the electron emission yield Y has a strong dependence on the projectile charge state q, incidence angle psi and impact energy E. In fitting the experimental data we found a nearly 1/tan psi dependence of Y. Theoretical analysis shows that these processes are closely related to the process of potential electron emission based on the classical over-the-barrier model.

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High-spin states in Pd-101 have been investigated experimentally via the Ge-76(Si-28, 3n gamma)Pd-101 reaction. The previously known bands based on the d(5/2) and h(11/2) neutron orbitals have been extended to higher-spin states, and two new structures have been observed. Spin and parity were assigned to the levels on the basis of the experimental results of the angular distribution of gamma rays deexciting the oriented states. For the ground-state band, the E-GOS (E-Gamma Over Spin) curve strongly suggests a structure transition from vibration to rotation while increasing spin.