Delocalization and fragmentation of collective modes in doped 4He drops

We have investigated the fragmentation of collective modes in doped 4He drops in the framework of a finite-range density-functional theory, as well as the delocalization of the impurity inside the cluster. Our results indicate that the impurity is gradually delocalized inside the drop as the size of the latter increases. As an example, results are shown in the case of Xe-4HeN systems up to N=112.

Magnetoelasticity and magnetoresistance in Cu-Al-Mn shape-memory alloys

We study the effect of a magnetic field on the martensitic transition of a Cu-Al-Mn shape-memory alloy. The martensitic transition has been studied through resistance measurements under applied magnetic fields ranging from 0 to 50 kOe. Negative magnetoresistance showing an almost linear dependence with the square of the magnetization has been observed. This magnetoresistive effect is associated with the existence of small ferromagnetic Mn-clusters. Its strength and thermal dependence is different in both phases. The martensitic transition temperature is slightly increased and its spread in temperature significantly reduced upon increasing the field. These results show the existence of magnetoelastic coupling, which favors the nucleation of those martensitic variants with the easy magnetization axis aligned with the field.

Comparação de métodos convencional e alternativo para determinar Cu, Fe, Mn e Zn em extratos de solos obtidos com solução de mehlich-1

Nos laboratórios brasileiros, a determinação de micronutrientes para estudos de fertilidade de solos é realizada por extração com solução de Mehlich-1 (M-1), utilizando-se uma razão solo: extrator de 1:5 m/v e posterior quantificação por espectrometria de absorção atômica (AAS). No entanto, muitos laboratórios também empregam razão solo:extrator M-1 de 1:10 m/v para determinar macronutrientes e, ou, quantificar por espectrometria de emissão óptica com plasma indutivamente acoplado (ICP OES), em substituição ao AAS. Como estudos comparativos entre as concentrações de micronutrientes obtidos por esses métodos alternativos são escassos, o objetivo deste trabalho foi investigar se essas diferentes condições experimentais gerariam diferentes resultados. Os resultados foram estatisticamente tratados e revelaram que as concentrações de Fe e Mn, utilizando-se ambas as razões de solo:extrator M-1 (1:5 e 1:10 m/v) e de Zn, na razão solo:extrator M-1 de 1:10 m/v, foram estatisticamente iguais, enquanto as concentrações de Cu em ambas as razões solo:extrator M-1 e de Zn na razão solo:extrator de 1:5 m/v foram diferentes, quando as duas técnicas de quantificação (ICP OES e AAS) foram comparadas. Também, todas as concentrações de Cu, Fe, Mn e Zn obtidas utilizando razão solo:extrator M-1 de 1:5 m/v foram diferentes daquelas encontradas com a razão de 1:10 m/v, independentemente da técnica de quantificação. A maioria dessas concentrações foi maior quando se usou a razão de 1:5 m/v e alterou a classe de interpretação dos teores. Portanto, não recomenda-se o uso da razão solo:extrator de 1:5 para as extrações dos micronutrientes Cu, Fe, Mn e Zn com solução M-1 de amostras de solo.

Substrate influence on the properties of doped thin silicon layers grown by Cat-CVD

We present structural and electrical properties for p- and n-type layers grown close to the transition between a-Si:H and nc-Si:H onto different substrates: Corning 1737 glass, ZnO:Al-coated glass and stainless steel. Structural properties were observed to depend on the substrate properties for samples grown under the same deposition conditions. Different behaviour was observed for n- and p-type material. Stainless steel seemed to enhance crystallinity when dealing with n-type layers, whereas an increased crystalline fraction was obtained on glass for p-type samples. Electrical conduction in the direction perpendicular to the substrate seemed to be mainly determined by the interfaces or by the existence of an amorphous incubation layer that might determine the electrical behaviour. In the direction perpendicular to the substrate, n-type layers exhibited a lower resistance value than p-type ones, showing better contact properties between the layer and the substrate.

Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD

In this paper we present results on phosphorous-doped μc-Si:H by catalytic chemical vapour deposition in a reactor with an internal arrangement that does not include a shutter. An incubation phase of around 20 nm seems to be the result of the uncontrolled conditions that take place during the first stages of deposition. The optimal deposition conditions found lead to a material with a dark conductivity of 12.8 S/cm, an activation energy of 0.026 eV and a crystalline fraction of 0.86. These values make the layers suitable to be implemented in solar cells.

Optimisation of doped microcrystalline silicon films deposited at very low temperatures by Hot-Wire CVD

In this paper we present new results on doped μc-Si:H thin films deposited by hot-wire chemical vapour deposition (HWCVD) in the very low temperature range (125-275°C). The doped layers were obtained by the addition of diborane or phosphine in the gas phase during deposition. The incorporation of boron and phosphorus in the films and their influence on the crystalline fraction are studied by secondary ion mass spectrometry and Raman spectroscopy, respectively. Good electrical transport properties were obtained in this deposition regime, with best dark conductivities of 2.6 and 9.8 S cm -1 for the p- and n-doped films, respectively. The effect of the hydrogen dilution and the layer thickness on the electrical properties are also studied. Some technological conclusions referred to cross contamination could be deduced from the nominally undoped samples obtained in the same chamber after p- and n-type heavily doped layers.

Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition

Epitaxial thin films of Y¿doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000¿1200¿°C and at an oxygen pressure of 1.5×10¿1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x¿ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101]¿MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve.

Magnetoelasticity and magnetoresistance in Cu-Al-Mn shape-memory alloys

We study the effect of a magnetic field on the martensitic transition of a Cu-Al-Mn shape-memory alloy. The martensitic transition has been studied through resistance measurements under applied magnetic fields ranging from 0 to 50 kOe. Negative magnetoresistance showing an almost linear dependence with the square of the magnetization has been observed. This magnetoresistive effect is associated with the existence of small ferromagnetic Mn-clusters. Its strength and thermal dependence is different in both phases. The martensitic transition temperature is slightly increased and its spread in temperature significantly reduced upon increasing the field. These results show the existence of magnetoelastic coupling, which favors the nucleation of those martensitic variants with the easy magnetization axis aligned with the field.

Ni-Mn-Ga thin films produced by pulsed laser deposition

Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1×10-6-Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the films

Magnetic field induced entropy change and magnetoelasticity in Ni-Mn-Ga alloys

The magnetocaloric effect that originates from the martensitic transition in the ferromagnetic Ni-Mn-Gashape-memory alloy is studied. We show that this effect is controlled by the magnetostructural coupling at boththe martensitic variant and magnetic domain length scales. A large entropy change induced by moderatemagnetic fields is obtained for alloys in which the magnetic moment of the two structural phases is not verydifferent. We also show that this entropy change is not associated with the entropy difference between themartensitic and the parent phase arising from the change in the crystallographic structure which has beenfound to be independent of the magnetic field within this range of fields.