Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition
| Contribuinte(s) |
Universitat de Barcelona |
|---|---|
| Data(s) |
03/05/2012
|
| Resumo |
Epitaxial thin films of Y¿doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000¿1200¿°C and at an oxygen pressure of 1.5×10¿1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x¿ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101]¿MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve. |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Direitos |
(c) American Institute of Physics, 1996 info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Pel·lícules fines #Làsers #Ions #Superconductivitat #Thin films #Lasers #Ions #Superconductivity |
| Tipo |
info:eu-repo/semantics/article |
