High brightness AlGaInP orange light emitting diodes

Orange AlGaInP high brightness light emitting diodes (LEDs) were fabricated by low pressure metalorganic chemical vapor deposition(LP-MOCVD) technology. AlGaInP double heterojunction structure was used as active layer. 15 pairs of Al0.5Ga0.5As/AlAs distributed Bragg reflector and 7 mu m Al0.8Ga0.2As current spreading layer were employed to reduce the absorption of GaAs substrate and upper anode respectively. At 20mA the LEDs emitting wavelength was between 600-610nm with 18.3nm FWHM, 0.45mW radiation power and 1.7% external quantum efficiency. Brightness of the LED chips and LED lamps with 15 degrees viewing angle(2 theta(1/2)) reached 30mcd and 1000mcd respectively.

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)

Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.

Si-based resonant-cavity-enhanced photodetector

Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300nm, The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5V is measured 10.2mA/W at 1285nm, and a full-width at half maximum of 25nm for the top-illumination RCE photodetector, and 19mA/W at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305nm with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

模拟增温与UV-B 辐射增强对云杉种子萌发和幼苗生长的影响

臭氧层损耗导致的地球表面UV-B辐射增强以及温室气体增多引起的气候变暖是当今两大全球环境问题。UV-B辐射增强和气候变暖对陆地植物和生态系统产生深远影响，并已成为全球变化研究的重要议题。作为世界第三极的青藏高原，UV-B 辐射增强以及气候变暖现象尤为突出。本试验所在林区是青藏高原东缘的主要林区，具有大面积的亚高山人工针叶成熟林，在全球变化背景下该森林的天然更新潜力如何是急待回答的重要问题。基于此，本研究围绕森林树种的种子和幼苗这一更新的重要阶段，开展了气候变暖、UV-B辐射增强和联合胁迫对云杉种子萌发及幼苗定居影响的研究，旨在全球变化背景下，探讨全球变暖、UV-B 辐射增强和联合胁迫是否对西南地区大面积人工亚高山针叶林更新的种子萌发和幼苗定居阶段产生影响。 本文以青藏高原东缘亚高山针叶林主要树种云杉为研究对象，研究云杉种子萌发及幼苗的生长和生理对UV-B辐射增强与气候变暖的响应。采用UV-B荧光灯（UV-lamp）来模拟增强的UV-B 辐射，此外，采用开顶式有机玻璃罩（OTCs）来模拟气候变暖。本试验包括四个处理：（1）大气UV-B 辐射+大气温度（C）；（2）大气UV-B 辐射+模拟气候变暖（W）；（3）增强的UV-B辐射+大气温度（U）；（4）增强的UV-B辐射+模拟气候变暖（U+W）。 根据本试验结果，UV-B辐射增强对云杉种子萌发没有显著影响，它对萌发云杉幼苗的影响主要体现在幼叶展开以后。根据两年的试验结果，增强的UV-B辐射降低了云杉幼苗抗氧化酶活性，降低了抗氧化物质的含量，此外，造成了膜质的过氧化，表现为MDA在针叶中的积累。增强的UV-B照射处理萌发云杉幼苗两年后，幼苗的生长受到显著抑制。我们的结果显示，OTCs分别提高了空气（10 cm）和土壤（5 cm）温度1.74℃和0.94 ℃。增温显著地促进了云杉种子提前萌发，提高了萌发速率和萌发比率，而且，明显地促进了幼苗的生长，表现为株高和生物量累积的显著增长。此外增温还有利于云杉幼苗根的伸长生长以及生物量的累积，这可以使云杉幼苗更好地利用土壤中的水分和营养元素。 根据本试验结果，温度升高显著地促进了增强UV-B辐射下云杉萌发幼苗的生长，这说明，温度升高缓解了UV-B辐射增强对云杉萌发幼苗的负面影响。这种缓解作用可能是温度升高对UV-B辐射增强处理下幼苗的抗氧化系统活性改善的结果。温度升高还缓解了高UV-B辐射对云杉幼苗根生长的抑制作用，这也可能是增温缓解伤害的原因之一。此外，根据我们的试验结果，增温与UV-B辐射增强联合作用（U+W）下云杉萌发幼苗的生长状况好于大气温度与大气UV-B辐射联合（C）处理，表现为株高、地径、根长和生物量积累均高于C处理，因此可以推断，UV-B辐射增强与气候变暖同时存在对萌发幼苗在两年之内的生长没有产生抑制作用，也就是说，气候变暖的缓解作用完全弥补了UV-B辐射增强的有害作用。 同样，增强的UV-B辐射显著影响了云杉幼苗的光合作用，表现为净光合速率（Pn）和表观量子效率（Φ）的提高，此外，根据我们的试验结果，它还造成了PSII的光抑制。增强的UV-B辐射显著抑制了云杉幼苗对营养元素的吸收，表现为大量营养元素、碳、钙、镁和锌含量的降低，但是，它却显著促进了铁在植株体内的积累。增温显著地提高了净光合速率，但是，它对光系统II（PSII）的光化学效率影响不大。温度升高缓解了UV-B增强对云杉幼苗光合作用的伤害，表现为净光合速率、表观量子效率以及PSII光化学效率的提高。此外，温度升高还缓解了UV-B辐射增强对离子吸收的抑制作用。 Enhanced UV-B radiation due to the reduction of O3 layer and global warming induced by increased greenhouse gases in the air have become the two pressing aspects of global climate changes. Moreover, enhanced UV-B radiation and warming have profound and long-term impacts on terrestrial plants and ecosystems, and the studies focusing on the two factors have attracted many attentions. Qinghai-Tibetan Plateau is the third in elevation in the world, and enhanced UV-B radiation and climate warming are especially prominent in this region. Our research located in the main forest belt in the eastern Qinghai-Tibetan Plateau where large areas of subalpine coniferous forests distributed. Based on that, we carried out a research to study the effects of enhanced UV-B radiation and climate warming on seed germination and seedlings growth of seedlings which are the important basic stage in forest regeneration. This research was arranged by a complete factorial design and included two factors (UV-B radiation and temperature) with two levels. The UV-lamps were used to manipulate the supplemental UV-B radiation and open-top chambers (OTCs) were adopted to increase temperature. The four treatments were: (1) C, ambient UV-B without warming; (2) U, enhanced UV-B without warming; (3) W, ambient UV-B with OTCs warming; (4) U+W, enhanced UV-B with OTCs warming. The main results were exhibited as follows: 1. Based on our results in this research, OTCs increased temperature on average 1.74℃ in air (10 cm above ground) and 0.92 ℃ in soil (5 cm beneath ground). Furthermore, OTCs also slightly reduced soil moisture and relative air humidity, however, the differences was not statistically significant. 2. Our results showed that enhanced UV-B had no significant effects on the seeds germination of P. asperata. Enhanced UV-B affected sprouts of P. asperata until the needles unfolded. During two years, enhanced UV-B inhibited the efficiency of the antioxidant defense systems, and as a result, it induced oxidant stress and the accumulation of MDA in needles. After two years of exposure to enhanced UV-B, the growth of P. asperata sprouts was markedly restrained compared with those under ambient UV-B radiation and temperature (C). Warming significantly stimulated the germination speed and increased the germination rate of P. asperata seeds. In the next place, it prominently facilitated the growth of P. asperata sprouts, represented as improvements in stem elongation and biomass accumulation. Furthermore, warming also increased root growth of P. asperata sprouts, which could made sprouts more efficient to use water and nutrient elements in soil. In this research, warming alleviated the deleterious effects of enhanced UV-B on P. asperata sprouts. It markedly stimulated the growth of P. asperata sprouts exposed to enhanced UV-B. The ease effects of warming on the abilities of the antioxidant defense systems might account for its amending effects on growth. After two years of exposure to enhanced UV-B radiation and warming, the growth of P. asperata sprouts was better than those under ambient UV-B radiation without warming (C), which could be seen from the higher plant height, basal diameter, root length and total biomass accumulation compared with C. 3. Enhanced UV-B radiation significantly influenced the photosynthesis processes of two-year old P. asperata seedlings. Our results showed that enhanced UV-B reduced the net photosynthetic rate (Pn) and the apparent quantum efficiency (Φ), and induced photoinhibition of photosynthetic system II (PSII). Enhanced UV-B significantly decreased the concentration of nitrogen (N), phosphorous (P), potassium (K), calcium (Ca), magnesium (Mg) and zinc (Zn), however, it increased the accumulation of iron (Fe) in the whole plant of P. asperata seedlings. Warming significantly stimulated Pn of P. asperata seedlings but it had no prominent impacts on the photochemical efficiency of PSII. In our research, warming also alleviated the harmful effects of enhanced UV-B on photosynthesis and absorption of ions of P. asperata seedlings. It increased Pn, Φ and the photochemical efficiency of PSII in seedlings exposed to enhanced UV-B. Moreover, warming also increased the absorption of ions of the seedlings exposed to enhanced UV-B radiation.

ZnO clusters encapsulated inside micropores of zeolites studied by UV Raman and laser-induced luminescence spectroscopies

Using microporous zeolites as host, sub-nanometric ZnO clusters were prepared in the micropores of the host by the incipient wetness impregnation method. A small amount of sub-nanometric ZnO clusters were introduced into the channels of HZSM-5 zeolite, whereas a large quantity of sub-nanometric ZnO clusters can be accommodated in the supercages of HY zeolite and no macrocrystalline ZnO exists on the extra surface of the HY material. The vibrations of the zeolite framework and ZnO were characterized by UV Raman spectroscopy. The optical properties of these ZnO clusters were studied by UV-visible absorption spectroscopy and laser-induced luminescence spectroscopy. It is found that there are strong host-guest interactions between the framework oxygen atoms of zeolite and ZnO clusters influencing the motions of the framework oxygen atoms. The interaction may be the reason why ZnO clusters are stabilized in the pores of zeolites. Different from bulk ZnO materials, these sub-nanometric ZnO clusters exhibit their absorption onset below 265 nm and show a purple luminescence band (centered at 410-445 nm) that possesses high quantum efficiency and quantum size effect. This purple luminescence band most likely originates from the coordinatively unsaturated Zn sites in sub-nanometric ZnO clusters. On the other hand, the differences in the pore structure between HZSM-5 and HY zeolites cause the absorption edge and the purple luminescence band of ZnO clusters in ZnO/HZSM-5 show a red shift in comparison with those of ZnO clusters in ZnO/HY.

低温下光照对黄瓜叶片光合特性的影响

为揭示低温下光照对黄瓜光合作用的影响，在叶片水平对５℃ １００μｍｏｌｍ·－’·ｓ－１和５℃黑暗处理４ｈ后黄瓜叶片光合－光响应和光合－ＣＯ２响应进行了对比研究、结果表明，５℃黑暗处理４ｈ使黄瓜叶片光饱和光合速率、表观光量子效率、ＣＯ２饱和光合速率以及梭化效率分别降低 ２２．５％、２８．０％、３１．３％和 ３７．２％，５℃ １００μｍｏｌ·ｍ－２·ｓ－１使上述指标分别降低 ５６．１％、６１．０％、５４．０％和 ５４．３％，说明 １００μｍｏｌ·ｍ－２·ｓ－１光照明显加剧５℃低温对黄瓜叶片光合功能的伤害。进一步研究结果显示低温光照处理使黄瓜叶片 ＰＳⅡ光合中心受到较严重的光抑制，类囊体跨膜质子梯度显著降低。对低温下光照对黄瓜叶片光合作用具有不良作用的原因进行了讨论。

Starburst substituted hexaazatriphenylene compounds: synthesis, photophysical and electrochemical properties

Starburst-substituted hexaazatriphenylene Compounds have been designed and synthesized by introducing various peripheral aryl substituents to the central heterocyclic core. The effects of various substituent groups on the photophysical and electrochemical properties of the substituted hexaazatriphenylene have been investigated. Significant red-shifts of the absorption peak (from 413 nm to 530 nm) and emission peak (from 432 nm to 700 nm) were observed when the electron-donating ability of the aryl substituents was increased, corresponding to a decrease in the band gap from 2.90 eV to 2.05 eV. Introducing bulky substituents with weak electron-donating ability enhances the fluorescence quantum yield from 23% to 87%. In contrast, incorporating aryl substituents with strong electron-donating ability decreases the fluorescence quantum yield.

Effect of ancillary ligands on the properties of heteroleptic green iridium dendrimers functionalized with carbazole dendrons

A series of heteroleptic green iridium dendrimers functionalized with carbazole dendrons, such as G2(pic) and G2(acac), have been synthesized, in which picolinic acid and acetylacetone are used as the ancillary ligands, respectively. Compared with the corresponding homoleptic iridium dendrimer G2 (8%), these heteroleptic ones can be prepared under mild conditions with total yields as high as 55-67%. Both the dendrimer G2(pic) and G2(acac) display bright green emissions with photoluminescence quantum yields higher than 0.80 in toluene solution. As a result, a maximum external quantum efficiency of 7.1% (21.0 cd/A) for G2(pic) and 7.7% (25.8 cd/A) for G2(acac) has been realized based on non-doped device configuration. The state-of-art performance indicates that the heteroleptic dendrimers can be promising candidates used for non-doped electrophosphorescent devices, especially when the ease of synthesis in a large scale is considered.

Synthesis, characterization and electrophosphorescent properties of mononuclear platinum(II) complexes based on 2-phenylbenzoimidazole derivatives

The rational design, synthesis and characterization of five phosphorescent platinum complexes [(C boolean AND N) Pt(acac)] [Hacac = acetylacetone, HC boolean AND N = 1-methyl-2-(4-fluorophenyl)benzoimidazole (H-FMBI), 1-methyl-2-phenylbenzoimidazole (H-MBI), 1,2-diphenyl-benzoimidazole (H-PBI), 1-(4-(3,6-di-t-butylcarbazol-9-yl)) phenyl-2-phenylbenzoimidazole (t-BuCz-H-PBI), and 1-(4-(3,6-di-(3,6-di-t-butyl-carbazol-9-yl))carbazol-9-yl) phenyl-2-phenylbenzoimidazole (t-BuCzCz-H-PBI)] have been discussed. The crystal structure of (MBI) Pt(acac) shows a nearly ideal square planar geometry around Pt atom and the weak intermolecular interactions with pi-pi spacing of 3.55 angstrom. All of the complexes emit green phosphorescence from the metal-to-ligand charge-transfer (MLCT) excited state with high quantum efficiency (0.08-0.17) at room temperature.

Architectures of Strontium Hydroxyapatite Microspheres: Solvothermal Synthesis and Luminescence Properties

Strontium hydroxyapatite (Sr-5(PO4)(3)OH, SrHAp) microspheres with 3D architectures have been successfully prepared through a efficient and facile solvothermal process. The experimental results indicate that the SrHAP microspheres are composed of a large amount of nanosheets, which are assembled in a radial form from the center to the surface of the microspheres. The as-obtained SrHAp samples show an intense and bright blue emission from 350 to 570 nm centered at 427 nm (CIE coordinates: x = 0.153, y = 0.081; lifetime: 9.2 ns; quantum efficiency: 31%) under long-wavelength UV light excitation (344 nm). This blue emission might result from the CO2 center dot- radical impurities in the crystal lattice. Furthermore, the surfactants CTAB and trisodium citrate have an obvious impact on the morphologies and the luminescence properties of the products, respectively.

Efficient Electrophosphorescence from a Platinum Metallopolyyne Featuring a 2,7-Carbazole Chromophore

The synthesis, thermal and emission properties of an electrophosphorescent platinum(II) metallopolyyne polymer consisting of 9-butylcarbazole-2,7-diyl spacer P1 are described. The optical and electronic properties of P1 are compared to their molecular diplatinum(II) and digold(I) model complexes. The photophysical properties of P1 are somehow analogous to its 2,7-fluorene-linked congener but differs significantly from that for the 3,6-carbazole derivative. Its optical band gap is notably reduced as compared to that for the 3,6-carbazole analog. Multi-layer polymer light-emitting diodes (PLEDs) were fabricated with P1 as the emitting layer which gave a strong green-yellow electrophosphorescence. The best PLED can reach the maximum current efficiency of 4.7 cd . A(-1) at 5 wt.-% doping level, corresponding to an external quantum efficiency of 1.5%. This represents the first literature example of efficient PLEDs exhibiting pure triplet emission under electrical excitation for metallopolyynes without the concomitant singlet emission.

A high-performance tandem white organic light-emitting diode combining highly effective white-units and their interconnection layer

By utilizing 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline:Li/MoO3 as an effective charge generation layer (CGL), we extend our recently demonstrated single-emitting-layer white organic light-emitting diode (WOLED) to realize an extremely high-efficiency tandem WOLED. This stacked device achieves maximum forward viewing current efficiency of 110.9 cd/A and external quantum efficiency of 43.3% at 1 mu A/cm(2) and emits stable white light with Commission Internationale de L'Eclairage coordinates of (0.34, 0.41) at 16 V. It is noted that the combination of effective single units and CGL is key prerequisite for realizing high-performance tandem WOLEDs.

Simple and Efficient Near-Infrared Organic Chromophores for Light-Emitting Diodes with Single Electroluminescent Emission above 1000 nm

A series of NIR organic chromophores with donor-pi-acceptor-pi-donor structure are synthesized. Good thermal stability and strong photoluminescence in solid state render them suitable for application in light-emitting diodes. Exclusive near-infrared emission at 1080 nm with external quantum efficiency of 0.28% is obtained from the nondoped OLEDs. The longest electroluminescence wave-length is 1220 nm.

Synthesis and Application of Thiadiazoloquinoxaline-Containing Chromophores as Dopants for Efficient Near-Infrared Organic Light-Emitting Diodes

series of a donor-acceptor-donor type of near-infrared (NIR) fluorescent chromophores based on [1,2,5]thiadiazolo[3,4-g]quinoxaline (TQ) as an electron acceptor and triphenylamine as an electron donor are synthesized and characterized. By introducing pendent phenyl groups or changing the pi-conjugation length in the TQ core, we tuned tile energy levels of these chromophores, resulting in the NIR emission in a range from 784 to 868 nm. High thermal stability and glass transition temperatures allow these chromophores to be used as dopant emitters, which can be processed by vapor deposition for the fabrication of organic light-emitting diodes (OLEDs) having the multilayered structure of ITO/MoO3/NPB/Alq(3):dopant emitter/BCP/Alq(3)/LiF/Al. The electroluminescence spectra of the devices based on these new chromophores cover a range from 748 to 870 nm. With 2 wt % of dopant 1, the LED device shows an exclusive NIR emission at 752 nm with the external quantum efficiency (EQE) as high as 1.12% over a wide range of current density (e.g., around 200 mA cm(-2)).