Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O 5 were obtained, where the electrodes consist of materials with low to high work function (Φ m, v a c from 4.06 to 5.93 eV). Effective metal work functions were extracted to study the Fermi level pinning effect and to discuss the dominant conduction mechanism. An accurate band alignment between electrodes and Ta2O5 is obtained and can be used for RRAM electrode engineering and conduction mechanism study. © 2013 American Institute of Physics.

High-frequency programmable acoustic wave device realized through ferroelectric domain engineering

Surface acoustic wave devices are extensively used in contemporary wireless communication devices. We used atomic force microscopy to form periodic macroscopic ferroelectric domains in sol-gel deposited lead zirconate titanate, where each ferroelectric domain is composed of many crystallites, each of which contains many microscopic ferroelastic domains. We examined the electro-acoustic characteristics of the apparatus and found a resonator behavior similar to that of an equivalent surface or bulk acoustic wave device. We show that the operational frequency of the device can be tailored by altering the periodicity of the engineered domains and demonstrate high-frequency filter behavior (>8GHz), allowing low-cost programmable high-frequency resonators. © 2014 AIP Publishing LLC.

Donor-donor binding in In2O3: Engineering shallow donor levels

Using first-principles band structure methods, we investigate the interactions between different donors in In2O3. Through the formation energy and transition energy level calculations, we find that an oxygen-vacancy creates a deep donor level, while an indium-interstitial or a tin-dopant induces a shallow donor level. The coupling between these donor levels gives rise to even shallower donor levels and leads to a significant reduction in their formation energies. Based on the analysis of the PBE0-corrected band structure and the molecular-orbital bonding diagram, we demonstrate these effects of donor-donor binding. In addition, total energy calculations show that these defect pairs tend to be more stable with respect to the isolated defects due to their negative binding energies. Thus, we may design shallow donor levels to enhance the electrical conductivity via the donor donor binding.

Engineering white light-emitting Eu-doped ZnO urchins by biopolymer-assisted hydrothermal method

With the presence of biopolymer-sodium alginate as additive, Eu-doped ZnO (zinc oxide) urchins consisting of nanorods were synthesized through a hydrothermal route. X-ray diffraction pattern makes evident the absence of phase other than wurtzite ZnO. Upon excited by 325 nm xenon laser, such nanostructured Eu-doped ZnO urchins emit white light, which originates from the luminescence of ZnO and the intra-4f transitions of Eu3+ ions. Besides acting as stabilizing agent, sodium alginate may also sensitize the Eu3+ ions in the nanostructures and facilitate the energy transfer from the host to Eu3+ ions. (c) 2006 American Institute of Physics.

Techniques for engineering quantum states

In this thesis I theoretically study quantum states of ultracold atoms. The majority of the Chapters focus on engineering specific quantum states of single atoms with high fidelity in experimentally realistic systems. In the sixth Chapter, I investigate the stability and dynamics of new multidimensional solitonic states that can be created in inhomogeneous atomic Bose-Einstein condensates. In Chapter three I present two papers in which I demonstrate how the coherent tunnelling by adiabatic passage (CTAP) process can be implemented in an experimentally realistic atom chip system, to coherently transfer the centre-of-mass of a single atom between two spatially distinct magnetic waveguides. In these works I also utilise GPU (Graphics Processing Unit) computing which offers a significant performance increase in the numerical simulation of the Schrödinger equation. In Chapter four I investigate the CTAP process for a linear arrangement of radio frequency traps where the centre-of-mass of both, single atoms and clouds of interacting atoms, can be coherently controlled. In Chapter five I present a theoretical study of adiabatic radio frequency potentials where I use Floquet theory to more accurately model situations where frequencies are close and/or field amplitudes are large. I also show how one can create highly versatile 2D adiabatic radio frequency potentials using multiple radio frequency fields with arbitrary field orientation and demonstrate their utility by simulating the creation of ring vortex solitons. In the sixth Chapter I discuss the stability and dynamics of a family of multidimensional solitonic states created in harmonically confined Bose-Einstein condensates. I demonstrate that these solitonic states have interesting dynamical instabilities, where a continuous collapse and revival of the initial state occurs. Through Bogoliubov analysis, I determine the modes responsible for the observed instabilities of each solitonic state and also extract information related to the time at which instability can be observed.

Modelling of industrial multi-physics processes—a key role for computational mechanics.

In the analysis of industrial processes, there is an increasing emphasis on systems governed by interacting continuum phenomena. Mathematical models of such multi-physics processes can only be achieved for practical simulations through computational solution procedures—computational mechanics. Examples of such multi-physics systems in the context of metals processing are used to explore some of the key issues. Finite-volume methods on unstructured meshes are proposed as a means to achieve efficient rapid solutions to such systems. Issues associated with the software design, the exploitation of high performance computers, and the concept of the virtual computational-mechanics modelling laboratory are also addressed in this context.

Computational modelling of multi-physics processes on high performance parallel computer systems

The demands of the process of engineering design, particularly for structural integrity, have exploited computational modelling techniques and software tools for decades. Frequently, the shape of structural components or assemblies is determined to optimise the flow distribution or heat transfer characteristics, and to ensure that the structural performance in service is adequate. From the perspective of computational modelling these activities are typically separated into: • fluid flow and the associated heat transfer analysis (possibly with chemical reactions), based upon Computational Fluid Dynamics (CFD) technology • structural analysis again possibly with heat transfer, based upon finite element analysis (FEA) techniques.

Multi-physics-multi-scale simulation and optimisation: the next generation

FEA and CFD analysis is becoming ever more complex with an emerging demand for simulation software technologies that can address ranges of problems that involve combinations of interactions amongst varying physical phenomena over a variety of time and length scales. Computation modelling of such problems requires software technologies that enable the representation of these complex suites of 'physical' interactions. This functionality requires the structuring of simulation modules for specific physical phemonmena so that the coupling can be effectiely represented. These 'multi-physics' and 'multi-scale' computations are very compute intensive and so the simulation software must operate effectively in parallel if it is to be used in this context. Of course the objective of 'multi-physics' and 'multi-scale' simulation is the optimal design of engineered systems so optimistation is an important feature of such classes of simulation. In this presentation, a multi-disciplinary approach to simulation based optimisation is described with some key examples of application to challenging engineering problems.

Polymer waveguide and VCSEL array multi-physics modelling for OECB based optical backplanes [opto-electrical circuit boards]

The deployment of OECBs (opto-electrical circuit boards) is expected to make a significant impact in the telecomm switches arena within the next five years. This will create optical backplanes with high speed point-to-point optical interconnects. The crucial aspect in the manufacturing process of the optical backplane is the successful coupling between VCSEL (vertical cavity surface emitting laser) device and embedded waveguide in the OECB. The results from a thermo-mechanical analysis are being used in a purely optical model, which solves optical energy and attenuation from the VCSEL aperture into, and then through, the waveguide. Results from the modelling are being investigated using DOE analysis to identify packaging parameters that minimise misalignment. This is achieved via a specialist optimisation software package. Results from the thermomechanical and optical models are discussed as are experimental results from the DOE.

Computational modelling of multi-physics and multi-scale processes in parallel

This paper provides an overview of the developing needs for simulation software technologies for the computational modelling of problems that involve combinations of interactions amongst varying physical phenomena over a variety of time and space scales. Computational modelling of such problems requires software tech1nologies that enable the mathematical description of the interacting physical phenomena together with the solution of the resulting suites of equations in a numerically consistent and compatible manner. This functionality requires the structuring of simulation modules for specific physical phenomena so that the coupling can be effectively represented. These multi-physics and multi-scale computations are very compute intensive and the simulation software must operate effectively in parallel if it is to be used in this context. An approach to these classes of multi-disciplinary simulation in parallel is described, with some key examples of application to2 challenging engineering problems.

Multi-physics modelling for microelectronics and microsystems - current capabilities and future challenges

At present the vast majority of Computer-Aided- Engineering (CAE) analysis calculations for microelectronic and microsystems technologies are undertaken using software tools that focus on single aspects of the physics taking place. For example, the design engineer may use one code to predict the airflow and thermal behavior of an electronic package, then another code to predict the stress in solder joints, and then yet another code to predict electromagnetic radiation throughout the system. The reason for this focus of mesh-based codes on separate parts of the governing physics is essentially due to the numerical technologies used to solve the partial differential equations, combined with the subsequent heritage structure in the software codes. Using different software tools, that each requires model build and meshing, leads to a large investment in time, and hence cost, to undertake each of the simulations. During the last ten years there has been significant developments in the modelling community around multi- physics analysis. These developments are being followed by many of the code vendors who are now providing multi-physics capabilities in their software tools. This paper illustrates current capabilities of multi-physics technology and highlights some of the future challenges

Multi-physics modelling for the fabrication, packaging and reliability of micro-systems components

The latest advances in multi-physics modelling both using high fidelity techniques and reduced order and behavioural models will be discussed. Particular focus will be given to the application and validation of these techniques for modelling the fabrication, packaging and subsequent reliability of micro-systems based components. The paper will discuss results from a number of research projects with particular emphasis on the techniques being developed in a major UK Goverment funded project - 3D-MINTEGRATION (www.3d-mintegration.com).

Choosing the appropriate level of coupling in multi-physics modeling of metallurgical processes

A computational model for the interrelated phenomena in the process of vacuum arc remelting is analyzed and adjusted of optimal accuracy and computation time. The decision steps in this case study are offered as an example how the coupling in models of similar processes can be addressed. Results show dominance of the electromagnetic forces over buoyancy and inertia for the investigated process conditions.

Perspectives for quantum state engineering via high nonlinearity in a double-EIT regime

We analyse the possibilities for quantum state engineering offered by a model for Kerr-type nonlinearity enhanced by electromagnetically induced transparency (EIT), which was recently proposed by Petrosyan and Kurizki [2002, Phys. Rev. A, 65, 33833]. We go beyond the semiclassical treatment and derive a quantum version of the model with both a full Hamiltonian approach and an analysis in terms of dressed states. The preparation of an entangled coherent state via a cross-phase modulation effect is demonstrated. We briefly show that the violation of locality for such an entangled coherent state is robust against low detection efficiency. Finally, we investigate the possibility of a bi-chromatic photon blockade realized via the interaction of a low density beam of atoms with a bi-modal electromagnetic cavity which is externally driven. We show the effectiveness of the blockade effect even when more than a single atom is inside the cavity. The possibility to control two different cavity modes allows some insights into the generation of an entangled state of cavity modes.

6-T SRAM cell design with nanoscale double-gate SOI MOSFETs: impact of source/drain engineering and circuit topology

The impact of source/drain engineering on the performance of a six-transistor (6-T) static random access memory (SRAM) cell, based on 22 nm double-gate (DG) SOI MOSFETs, has been analyzed using mixed-mode simulation, for three different circuit topologies for low voltage operation. The trade-offs associated with the various conflicting requirements relating to read/write/standby operations have been evaluated comprehensively in terms of eight performance metrics, namely retention noise margin, static noise margin, static voltage/current noise margin, write-ability current, write trip voltage/current and leakage current. Optimal design parameters with gate-underlap architecture have been identified to enhance the overall SRAM performance, and the influence of parasitic source/drain resistance and supply voltage scaling has been investigated. A gate-underlap device designed with a spacer-to-straggle (s/sigma) ratio in the range 2-3 yields improved SRAM performance metrics, regardless of circuit topology. An optimal two word-line double-gate SOI 6-T SRAM cell design exhibits a high SNM similar to 162 mV, I-wr similar to 35 mu A and low I-leak similar to 70 pA at V-DD = 0.6 V, while maintaining SNM similar to 30% V-DD over the supply voltage (V-DD) range of 0.4-0.9 V.