Immobilization of streptavidin in sol-gel films: Application on the diagnosis of hepatitis C virus

Recent advances have accelerated the development of biosensors for the analysis of specific gene sequences. In this kind of biosensor, a DNA probe is immobilized on a transducer and the hybridization with the target DNA is monitored by suitable methodology. In the present work, the streptavidin (STA) was encapsulated in thin films siloxane-poly(propylene oxide) hybrids prepared by sol-gel method and deposited on the graphite electrode surface by dip-coating process. Biotinylated 18-mer probes were immobilized through STA and a novel amperometric DNA biosensor for the detection and genotyping of the hepatitis C virus (genotypes 1, 2A/C, 2B and 3) is described. The HCV RNA from serum was submitted to reverse transcriptase-linked polymerase chain reaction (RT-PCR) and biotin-labeled cDNA was obtained. Thus, the cDNA was hybridized to the target-specific oligonucleotide probe immobilized on the graphite electrode surface and following the avidin-peroxidase conjugate was added. The enzymatic response was investigated by constant potential amperometry at -0.45 V versus Ag/AgCl using H2O2 and KI solutions. HCV RNA negative and positive controls and positive samples of sera patients were analyzed and the results were compared to commercial kit. The proposed methodology appeared to be suitable and convenient tool for streptavidin immobilization and diagnose of HCV disease. (c) 2006 Elsevier B.V. All rights reserved.

Chemical deposition of La0.7Ca0.3MnO3±δ films on ceramic substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Characterization of metallic electrical contacts to SnO2 thin films lightly doped with Eu3+ ions, and photo-induced resistivity

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Deposition and characterization of BiVO4 thin films and evaluation as photoanodes for methylene blue degradation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Rare earth centers properties and electron trapping in SnO2 thin films produced by sol-gel route

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effect of pH of colloidal suspension on crystallization and activation energy of deep levels in SnO2 thin films obtained via sol-gel

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Improvement of electrical properties of Sr-modified (Pb,Ca)TiO3 thin films grown by soft chemistry route

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of oxidizing atmosphere on the electrical properties of SrBi4Ti4O15 thin films obtained by the polymeric precursor method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Photocatalytic decomposition of diclofenac potassium using silver-modified TiO(2) thin films

The effects of silver insertion on the TiO(2) photocatalytic activity for the degradation of diclofenac potassium were reported here. Techniques such as X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy were used to comprehend the relation between structure and properties of the silver-modified TiO(2), thin films obtained by the sol-gel method. The lattice parameters and the crystallinity of TiO(2) anatase phase were affected by inserted silver, and the film thickness increased about 4 nm for each 1 wt.% of silver inserted. The degradation of diclofenac potassium and by-products reached an efficiency of 4.6 mg(C) W(-1) when the material was modified with silver. Although the first step of degradation involves only the photochemical process related to the loss of the chlorine and hydrogen atoms. This cyclization reaction leads to the formation of intermediate, which degradation is facilitated by the modified material. (C) 2007 Elsevier B.V. All rights reserved.

Effect of the excess of bismuth on the morphology and properties of the BaBi2Nb2O9 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dielectric properties of Ca(Zr0.05Ti0.95)O-3 thin films prepared by chemical solution deposition

Ca(Zr0.05Ti0.95)O-3 (CZT) thin films were grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by the soft chemical method. The films were deposited from spin-coating technique and annealed at 928 K for 4 h under oxygen atmosphere. CZT films present orthorhombic structure with a crack free and granular microstructure. Atomic force microscopy and field-emission scanning electron microscopy showed that CZT present grains with about 47 nm and thickness about 450 nm. Dielectric constant and dielectric loss of the films was approximately 210 at 100 kHz and 0.032 at 1 MHz. The Au/CZT/Pt capacitor shows a hysteresis loop with remnant polarization of 2.5 mu C/cm(2), and coercive field of 18 kV/cm, at an applied voltage of 6 V. The leakage current density was about 4.6 x 10(-8) A/cm(2) at 3 V. Dielectric constant-voltage curve is located at zero bias field suggesting the absence of internal electric fields. (c) 2006 Elsevier B.V. All rights reserved.

Effects of annealing on the crystallization and roughness of PLZT thin films

Lead lanthanum zirconate titanate (PLZT) thin films with stoichiometry (9/65/35) were prepared by a dip-coating process using a polymeric organic solution. The solution viscosity was adjusted in the range of 15-56 cP. Silicon (100) substrates were previously cleaned and then immersed in the solution. The withdrawal speed of substrate from the solution was adjusted within a range of 5 to 20 mm/min. The coated substrates were thermally treated in the 450-700 degreesC temperature range. Surface roughness and crystallization of these films are strongly dependent on the annealing conditions. Infrared and X-ray diffraction data for PLZT powders heat-treated at 650 degreesC for 3 h show that the material is free of carbonate phases and crystalline. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Effect of precursor solution on the formation of perovskite phase of Pb(Mg-1/Nb-3(2/3))O-3 thin films

Precursor solutions for Pb(Mg1/3Nb2/3)O-3 (PMN) synthesis were obtained by Pechini's method. The influence of the concentration of organic materials on the phase formation has been studied. For this purpose, PMN solutions were prepared with different precursors and were characterized by thermogravimetric and differential thermal analysis. The obtained solutions were deposited onto a Si (100) substrate by dip coating and pre-treated in a hot plate at 300 degreesC for 1 h. The films were annealed at 600, 700, 800 and 900 degreesC for 1 h and characterized by X-ray diffraction. The perovskite phase was formed after annealing at 600 and 700 degreesC when the solution of PMN was prepared with a lower amount of organic material and starting with mobium oxide. By increasing the temperature to 800 or 900 degreesC, only the formation of pyrochlore phase was observed. With the solution prepared from mobium ethoxide, only the presence of pyrochlore phase was observed independently of the annealing temperature. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method

Ferroelectric SrBi4Ti4O15 thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. Atomic force microscopy (AFM) analyses showed that the surface of these films is smooth, dense and crack-free with low surface roughness (6.4 nm). At room temperature and at a frequency of 1 MHz, the dielectric constant and the dissipation factor were, respectively, 150 and 0.022. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behaviour. The remanent polarization and coercive field for the films deposited were 5.4 mu C/cm(2) and 8 5 kV/cm, respectively. All the capacitors showed good polarization fatigue characteristics at least up to 1 x 10(10) bipolar pulse cycles indicating that SrBi4Ti4O15 thin films can be a promising material for use in nonvolatile memories. (c) 2005 Elsevier B.V. All rights reserved.