Robust local and nonlocal transport in the topological Kondo insulator SmB6 in the presence of a high magnetic field

SmB6 has been predicted to be a Kondo topological insulator with topologically protected conducting surface states. We have studied quantitatively the electrical transport through surface states in high-quality single crystals of SmB6. We observe a large nonlocal surface signal at temperatures lower than the bulk Kondo gap scale. Measurements and finite-element simulations allow us to distinguish unambiguously between the contributions from different transport channels. In contrast to general expectations, the electrical transport properties of the surface channels were found to be insensitive to high magnetic fields. We propose possible scenarios that might explain this unexpected finding. Local and nonlocal magnetoresistance measurements allowed us to identify possible signatures of helical spin states and strong interband scattering at the surface.

Efficient Low Complexity Power Allocation Policies for Wireless Communication Systems Guaranteeing QoS

We consider near-optimal policies for a single user transmitting on a wireless channel which minimize average queue length under average power constraint. The power is consumed in transmission of data only. We consider the case when the power used in transmission is a linear function of the data transmitted. The transmission channel may experience multipath fading. Later, we also extend these results to the multiuser case. We show that our policies can be used in a system with energy harvesting sources at the transmitter. Next we consider data users which require minimum rate guarantees. Finally we consider the system which has both data and real time users. Our policies have low computational complexity, closed form expression for mean delays and require only the mean arrival rate with no queue length information.

Bulk-Induced 1/f Noise at the Surface of Three-Dimensional Topological Insulators

Slow intrinsic fluctuations of resistance, also known as the flicker noise or 1/f-noise, in the surface transport of strong topological insulators (TIs) is a poorly understood phenomenon. Here, we have systematically explored the 1/f-noise in field-effect transistors (FET) of mechanically exfoliated Bi1.6Sb0.4Te2Se TI films when transport occurs predominantly via the surface states. We find that the slow kinetics of the charge disorder within the bulk of the TI induces mobility fluctuations at the surface, providing a new source of intrinsic 1/f-noise that is unique to bulk TI systems. At small channel thickness, the noise magnitude can be extremely small, corresponding to the phenomenological Hooge parameter gamma(H) as low as approximate to 10(-4), but it increases rapidly when channel thickness exceeds similar to 1 mu m. From the temperature (T)-dependence of noise, which displayed sharp peaks at characteristic values of T, we identified generation-recombination processes from interband transitions within the TI bulk as the dominant source of the mobility fluctuations in surface transport. Our experiment not only establishes an intrinsic microscopic origin of noise in TI surface channels, but also reveals a unique spectroscopic information on the impurity bands that can be useful in bulk TI systems in general.

Tailoring of Electronic Structure and Thermoelectric Properties of a Topological Crystalline Insulator by Chemical Doping

Topological crystalline insulators (TCIs) are a new quantum state of matter in which linearly dispersed metallic surface states are protected by crystal mirror symmetry. Owing to its vanishingly small bulk band gap, a TCI like Pb0.6Sn0.4Te has poor thermoelectric properties. Breaking of crystal symmetry can widen the band gap of TCI. While breaking of mirror symmetry in a TCI has been mostly explored by various physical perturbation techniques, chemical doping, which may also alter the electronic structure of TCI by perturbing the local mirror symmetry, has not yet been explored. Herein, we demonstrate that Na doping in Pb0.6Sn0.4Te locally breaks the crystal symmetry and opens up a bulk electronic band gap, which is confirmed by direct electronic absorption spectroscopy and electronic structure calculations. Na doping in Pb0.6Sn0.4Te increases p-type carrier concentration and suppresses the bipolar conduction (by widening the band gap), which collectively gives rise to a promising zT of 1 at 856 K for Pb0.58Sn0.40Na0.02Te. Breaking of crystal symmetry by chemical doping widens the bulk band gap in TCI, which uncovers a route to improve TCI for thermoelectric applications.

Kernelization complexity of possible winner and coalitional manipulation problems in voting

In the POSSIBLE WINNER problem in computational social choice theory, we are given a set of partial preferences and the question is whether a distinguished candidate could be made winner by extending the partial preferences to linear preferences. Previous work has provided, for many common voting rules, fixed parameter tractable algorithms for the POSSIBLE WINNER problem, with number of candidates as the parameter. However, the corresponding kernelization question is still open and in fact, has been mentioned as a key research challenge 10]. In this paper, we settle this open question for many common voting rules. We show that the POSSIBLE WINNER problem for maximin, Copeland, Bucklin, ranked pairs, and a class of scoring rules that includes the Borda voting rule does not admit a polynomial kernel with the number of candidates as the parameter. We show however that the COALITIONAL MANIPULATION problem which is an important special case of the POSSIBLE WINNER problem does admit a polynomial kernel for maximin, Copeland, ranked pairs, and a class of scoring rules that includes the Borda voting rule, when the number of manipulators is polynomial in the number of candidates. A significant conclusion of our work is that the POSSIBLE WINNER problem is harder than the COALITIONAL MANIPULATION problem since the COALITIONAL MANIPULATION problem admits a polynomial kernel whereas the POSSIBLE WINNER problem does not admit a polynomial kernel. (C) 2015 Elsevier B.V. All rights reserved.

Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not?

In recent years, a low pressure transition around P similar to 3 GPa exhibited by the A(2)B(3)-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi2Se3) using Raman spectroscopy at pressure up to 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P similar to 2.4 GPa followed by structural transitions at similar to 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P similar to 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated Z(2) invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition.

Efficient topological localization using orientation adjacency coherence histograms

This paper describes an efficient vision-based global topological localization approach that uses a coarse-to-fine strategy. Orientation Adjacency Coherence Histogram (OACH), a novel image feature, is proposed to improve the coarse localization. The coarse localization results are taken as inputs for the fine localization which is carried out by matching Harris-Laplace interest points characterized by the SIFT descriptor. Computation of OACHs and interest points is efficient due to the fact that these features are computed in an integrated process. We have implemented and tested the localization system in real environments. The experimental results demonstrate that our approach is efficient and reliable in both indoor and outdoor environments. © 2006 IEEE.