Präparation von Bismutsulfid-Absorberschichten für Dünnschichtsolarzellen mittels physikalischer Gasphasenabscheidung

Angesichts der sich abzeichnenden Erschöpfung fossiler Ressourcen ist die Erforschung alternativer Energiequellen derzeit eines der meistbeachteten Forschungsgebiete. Durch ihr enormes Potential ist die Photovoltaik besonders im Fokus der Wissenschaft. Um großflächige Beschichtungsverfahren nutzen zu können, wird seit einigen Jahren auf dem Gebiet der Dünnschichtphotovoltaik intensiv geforscht. Jedoch sind die gegenwärtigen Solarzellenkonzepte allesamt durch die Verwendung giftiger (Cd, As) oder seltener Elemente (In, Ga) oder durch eine komplexe Phasenbildung in ihrem Potential beschränkt. Die Entwicklung alternativer Konzepte erscheint daher naheliegend.rnAufgrund dessen wurde in einem BMBF-geförderten Verbundprojekt die Abscheidung von Dünnschichten des binären Halbleiters Bi2S3 mittels physikalischer Gasphasenabscheidung mit dem Ziel der Etablierung als quasi-intrinsischer Absorber in Solarzellenstrukturen mit p-i-n-Schichtfolge hin untersucht.rnDurch sein von einem hochgradig anisotropen Bindungscharakter geprägtes Kristallwachstum war die Abscheidung glatter, einphasiger und für die Integration in eine Multischichtstruktur geeigneter Schichten mit Schichtdicken von einigen 100 nm eine der wichtigsten Herausforderungen. Die Auswirkungen der beiden Parameter Abscheidungstemperatur und Stöchiometrie wurden hinsichtlich ihrer Auswirkungen auf die relevanten Kenngrößen (wie Morphologie, Dotierungsdichte und Photolumineszenz) untersucht. Es gelang, erfolgreich polykristalline Schichten mit geeigneter Rauigkeit und einer Dotierungsdichte von n ≈ 2 1015cm-3 auf anwendungsrelevanten Substraten abzuscheiden, wobei eine besonders starke Abhängigkeit von der Gasphasenzusammensetzung ermittelt werden. Es konnten weiterhin die ersten Messungen der elektronischen Zustandsdichte unter Verwendung von Hochenergie-Photoemissionsspektroskopie durchgeführt werden, die insbesondere den Einfluss variabler Materialzusammensetzungen offenbarten.rnZum Nachweis der Eignung des Materials als Absorberschicht standen innerhalb des Projektes mit SnS, Cu2O und PbS prinzipiell geeignete p-Kontaktmaterialien zur Verfügung. Es konnten trotz der Verwendung besonders sauberer Abscheidungsmethoden im Vakuum keine funktionstüchtigen Solarzellen mit Bi2S3 deponiert werden. Jedoch war es unter Verwendung von Photoemissionspektroskopie möglich, die relevanten Grenzflächen zu spektroskopieren und die Ursachen für die Beobachtungen zu identifizieren. Zudem konnte erfolgreich die Notwendigkeit von Puffermaterialien bei der Bi2S3-Abscheidung nachgewiesen werden, um Oberflächenreaktionen zu unterbinden und die Transporteigenschaften an der Grenzfläche zu verbessern.rn

Excited-state dynamics in donor-acceptor systems for energy conversion

In dieser Arbeit werden die Dynamiken angeregter Zustände in Donor-Akzeptorsystemen für Energieumwandlungsprozesse mit ultraschneller zeitaufgelöster optischer Spektroskopie behandelt. Der Hauptteil dieser Arbeit legt den Fokus auf die Erforschung der Photophysik organischer Solarzellen, deren aktive Schichten aus diketopyrrolopyrrole (DPP) basierten Polymeren mit kleiner Bandlücke als Elektronendonatoren und Fullerenen als Elektronenakzeptoren bestehen. rnEin zweiter Teil widmet sich der Erforschung von künstlichen primären Photosynthesereaktionszentren, basierend auf Porphyrinen, Quinonen und Ferrocenen, die jeweils als Lichtsammeleinheit, Elektronenakzeptor beziehungsweise als Elektronendonatoren eingesetzt werden, um langlebige ladungsgetrennte Zustände zu erzeugen.rnrnZeitaufgelöste Photolumineszenzspektroskopie und transiente Absorptionsspektroskopie haben gezeigt, dass Singulettexzitonenlebenszeiten in den Polymeren PTDPP-TT und PFDPP-TT Polymeren kurz sind (< 20 ps) und dass in Mischungen der Polymere mit PC71BM geminale Rekombination von gebundenen Ladungstransferzuständen ein Hauptverlustkanal ist. Zudem wurde in beiden Systemen schnelle nichtgeminale Rekombination freier Ladungen zu Triplettzuständen auf dem Polymer beobachtet. Für das Donor-Akzeptor System PDPP5T:PC71BM wurde nachgewiesen, dass die Zugabe eines Lösungsmittels mit hohem Siedepunkt, und zwar ortho-Dichlorbenzol, die Morphologie der aktiven Schicht stark beeinflusst und die Solarzelleneffizienz verbessert. Der Grund hierfür ist, dass die Donator- und Akzeptormaterialien besser durchmischt sind und sich Perkolationswege zu den Elektroden ausgebildet haben, was zu einer verbesserten Ladungsträgergeneration und Extraktion führt. Schnelle Bildung des Triplettzustands wurde in beiden PDPP5T:PC71BM Systemen beobachtet, da der Triplettzustand des Polymers über Laungstransferzustände mit Triplettcharakter populiert werden kann. "Multivariate curve resolution" (MCR) Analyse hat eine starke Intensitätsabhängigkeit gezeigt, was auf nichtgeminale Ladungsträgerrekombination in den Triplettzustand hinweist.rnrnIn den künstlichen primären Photosynthesereaktionszentren hat transiente Absorptionsspektroskopie bestätigt, dass photoinduzierter Ladungstransfer in Quinon-Porphyrin (Q-P) und Porphyrin-Ferrocen (P-Fc) Diaden sowie in Quinon-Porphyrin-Ferrocen (Q-P-Fc) Triaden effizient ist. Es wurde jedoch auch gezeigt, dass in den P-Fc unf Q-P-Fc Systemen die ladungsgetrennten Zustände in den Triplettzustand der jeweiligen Porphyrine rekombinieren. Der ladungsgetrennte Zustand konnte in der Q-P Diade durch Zugabe einer Lewissäure signifikant stabilisiert werden.

Progetto di una scheda a circuito stampato per il collaudo di un circuito integrato per Energy Harvesting da sorgenti eterogenee

Questo elaborato tratta la realizzazione di una scheda a circuito stampato. Essa è stata pensata con il compito di testare un circuito integrato per l'Energy Harvesting, progettato dall'Univesità di Bologna. La scheda implementerà numerose sorgenti alternative eterogenee Low-Power, cosicché il circuito integrato riuscirà ad estrapolarne una carica elettrica fino ad un massimo di alcuni milliwatt. Questa potenza sarà sufficiente ad alimentare qualsiasi dispositivo Low-Power.

Functional ZnO nanostructures for electronic and energy applications

ZnO has proven to be a multifunctional material with important nanotechnological applications. ZnO nanostructures can be grown in various forms such as nanowires, nanorods, nanobelts, nanocombs etc. In this work, ZnO nanostructures are grown in a double quartz tube configuration thermal Chemical Vapor Deposition (CVD) system. We focus on functionalized ZnO Nanostructures by controlling their structures and tuning their properties for various applications. The following topics have been investigated: 1. We have fabricated various ZnO nanostructures using a thermal CVD technique. The growth parameters were optimized and studied for different nanostructures. 2. We have studied the application of ZnO nanowires (ZnONWs) for field effect transistors (FETs). Unintentional n-type conductivity was observed in our FETs based on as-grown ZnO NWs. We have then shown for the first time that controlled incorporation of hydrogen into ZnO NWs can introduce p-type characters to the nanowires. We further found that the n-type behaviors remained, leading to the ambipolar behaviors of hydrogen incorporated ZnO NWs. Importantly, the detected p- and n- type behaviors are stable for longer than two years when devices were kept in ambient conditions. All these can be explained by an ab initio model of Zn vacancy-Hydrogen complexes, which can serve as the donor, acceptors, or green photoluminescence quencher, depend on the number of hydrogen atoms involved. 3. Next ZnONWs were tested for electron field emission. We focus on reducing the threshold field (Eth) of field emission from non-aligned ZnO NWs. As encouraged by our results on enhancing the conductivity of ZnO NWs by hydrogen annealing described in Chapter 3, we have studied the effect of hydrogen annealing for improving field emission behavior of our ZnO NWs. We found that optimally annealed ZnO NWs offered much lower threshold electric field and improved emission stability. We also studied field emission from ZnO NWs at moderate vacuum levels. We found that there exists a minimum Eth as we scale the threshold field with pressure. This behavior is explained by referring to Paschen’s law. 4. We have studied the application of ZnO nanostructures for solar energy harvesting. First, as-grown and (CdSe) ZnS QDs decorated ZnO NBs and ZnONWs were tested for photocurrent generation. All these nanostructures offered fast response time to solar radiation. The decoration of QDs decreases the stable current level produced by ZnONWs but increases that generated by NBs. It is possible that NBs offer more stable surfaces for the attachment of QDs. In addition, our results suggests that performance degradation of solar cells made by growing ZnO NWs on ITO is due to the increase in resistance of ITO after the high temperature growth process. Hydrogen annealing also improve the efficiency of the solar cells by decreasing the resistance of ITO. Due to the issues on ITO, we use Ni foil as the growth substrates. Performance of solar cells made by growing ZnO NWs on Ni foils degraded after Hydrogen annealing at both low (300 °C) and high (600 °C) temperatures since annealing passivates native defects in ZnONWs and thus reduce the absorption of visible spectra from our solar simulator. Decoration of QDs improves the efficiency of such solar cells by increasing absorption of light in the visible region. Using a better electrolyte than phosphate buffer solution (PBS) such as KI also improves the solar cell efficiency. 5. Finally, we have attempted p-type doping of ZnO NWs using various growth precursors including phosphorus pentoxide, sodium fluoride, and zinc fluoride. We have also attempted to create p-type carriers via introducing interstitial fluorine by annealing ZnO nanostructures in diluted fluorine gas. In brief, we are unable to reproduce the growth of reported p-type ZnO nanostructures. However; we have identified the window of temperature and duration of post-growth annealing of ZnO NWs in dilute fluorine gas which leads to suppression of native defects. This is the first experimental effort on post-growth annealing of ZnO NWs in dilute fluorine gas although this has been suggested by a recent theory for creating p-type semiconductors. In our experiments the defect band peak due to native defects is found to decrease by annealing at 300 °C for 10 – 30 minutes. One of the major future works will be to determine the type of charge carriers in our annealed ZnONWs.

Highly Efficient IR to NIR Upconversion in Gd2O2S: Er3+ for Photovoltaic Applications

Upconversion (UC) is a promising option to enhance the efficiency of solar cells by conversion of sub-bandgap infrared photons to higher energy photons that can be utilized by the solar cell. The UC quantum yield is a key parameter for a successful application. Here the UC luminescence properties of Er3+-doped Gd2O2S are investigated by means of luminescence spectroscopy, quantum yield measurements, and excited state dynamics experiments. Excitation into the maximum of the 4I15/2 → 4I13/2 Er3+ absorption band around 1500 nm induces very efficient UC emission from different Er3+ excited states with energies above the silicon bandgap, in particular, the emission originating from the 4I11/2 state around 1000 nm. Concentration dependent studies reveal that the highest UC quantum yield is realized for a 10% Er3+-doping concentration. The UC luminescence is compared to the well-known Er3+-doped β-NaYF4 UC material for which the highest UC quantum yield has been reported for 25% Er3+. The UC internal quantum yields were measured in this work for Gd2O2S: 10%Er3+ and β-NaYF4: 25%Er3+ to be 12 ± 1% and 8.9 ± 0.7%, respectively, under monochromatic excitation around 1500 nm at a power of 700 W/m2. The UC quantum yield reported here for Gd2O2S: 10%Er3+ is the highest value achieved so far under monochromatic excitation into the 4I13/2 Er3+ level. Power dependence and lifetime measurements were performed to understand the mechanisms responsible for the efficient UC luminescence. We show that the main process yielding 4I11/2 UC emission is energy transfer UC.

Layer-by-layer grown scalable redox-active ruthenium-based molecular multilayer thin films for electrochemical applications and beyond

Here we report the first study on the electrochemical energy storage application of a surface-immobilized ruthenium complex multilayer thin film with anion storage capability. We employed a novel dinuclear ruthenium complex with tetrapodal anchoring groups to build well-ordered redox-active multilayer coatings on an indium tin oxide (ITO) surface using a layer-by-layer self-assembly process. Cyclic voltammetry (CV), UV-Visible (UV-Vis) and Raman spectroscopy showed a linear increase of peak current, absorbance and Raman intensities, respectively with the number of layers. These results indicate the formation of well-ordered multilayers of the ruthenium complex on ITO, which is further supported by the X-ray photoelectron spectroscopy analysis. The thickness of the layers can be controlled with nanometer precision. In particular, the thickest layer studied (65 molecular layers and approx. 120 nm thick) demonstrated fast electrochemical oxidation/reduction, indicating a very low attenuation of the charge transfer within the multilayer. In situ-UV-Vis and resonance Raman spectroscopy results demonstrated the reversible electrochromic/redox behavior of the ruthenium complex multilayered films on ITO with respect to the electrode potential, which is an ideal prerequisite for e.g. smart electrochemical energy storage applications. Galvanostatic charge–discharge experiments demonstrated a pseudocapacitor behavior of the multilayer film with a good specific capacitance of 92.2 F g−1 at a current density of 10 μA cm−2 and an excellent cycling stability. As demonstrated in our prototypical experiments, the fine control of physicochemical properties at nanometer scale, relatively good stability of layers under ambient conditions makes the multilayer coatings of this type an excellent material for e.g. electrochemical energy storage, as interlayers in inverted bulk heterojunction solar cell applications and as functional components in molecular electronics applications.

Thermodynamics of zinc insertion in CuGaS2:Ti, used as a modulator agent in an intermediate-band photovoltaic material

An intermediate-bandphotovoltaicmaterial, which has an isolated metallic band located between the top of the valence band and bottom of the conduction band of some semiconductors, has been proposed as third generation solar cell to be used in photovoltaic applications. Density functional theory calculations of Zn in CuGaS2:Ti have previously shown that, the intermediate-band position can be modulated in proportion of Zn insertion in such a way that increasing Zn concentration can lead to aband-gap reduction, and an adjustment of the intermediate-band position. This could be interesting in the formation of an intermediate-bandmaterial, that has the maximum efficiency theoretically predicted for the intermediate-band solar cell. In this work, the energetics of several reaction schemes that could lead to the decomposition of the modulated intermediate-bandphotovoltaicmaterial, CuGaS2:Ti:Zn, is studied in order to assess the thermodynamic stability of this material. Calculations of the total free energy and disorder entropy have been taken into account, to get the reaction energy and free energy of the compound decomposition, which is found to be thermodynamically favorable

Roadmap towards efficiencies over 40% at ultra-high concentrations (> 1000 suns)

High efficiency solar cells working under ultra-high concentrations (>;1000X) have been shown to be a promising solution to decrease the cost of PV electricity, increase the efficiency and circumvent the material availability restrictions for massive PV penetration. A detailed analysis of the limitations of our current triple junction solar cell (36.2% at 700X), in the quest to maximize efficiency at 1000X, shows that the main improvements to tackle are: a) implementation of a high band gap tunnel junction; b) increase the band gap of the top cell; c) fine current matching tune; d) enhancement of the front contact process. This constitutes our roadmap to reach an efficiency over 41%

Theoretical study of band alignment in nano-porous ZnO interacting with substituted Phthalocyanines

The aim of this work is the theoretical study of the band alignment between the two components of a hybrid organic-inorganic solar-cell. The working organic molecules are metal tetra-sulphonated phthalocyanines (M-Pc) and the inorganic material is nano-porous ZnO growth in the 001 direction. The theoretical calculations are being made using the density functional theory (DFT) using a GGA functional with the SIESTA code, which projects electron wave functions and density onto a real space grid and uses as basis set a linear combination of numerical, finite-range localized atomic orbitals. We also used the DFT+U method included in the code that allows a semi-empirical inclusion of electronic correlations in the description of electronic spectra for systems such as zinc oxide.

Analysis of the Mechanical Properties of Multicrystalline and Monocrystalline Silicon Wafers Manufactured by Casting Methods

Quasi-monocrystalline silicon wafers have appeared as a critical innovation in the PV industry, joining the most favourable characteristics of the conventional substrates: the higher solar cell efficiencies of monocrystalline Czochralski-Si (Cz-Si) wafers and the lower cost and the full square-shape of the multicrystalline ones. However, the quasi-mono ingot growth can lead to a different defect structure than the typical Cz-Si process. Thus, the properties of the brand-new quasi-mono wafers, from a mechanical point of view, have been for the first time studied, comparing their strength with that of both Cz-Si mono and typical multicrystalline materials. The study has been carried out employing the four line bending test and simulating them by means of FE models. For the analysis, failure stresses were fitted to a three-parameter Weibull distribution. High mechanical strength was found in all the cases. The low quality quasi-mono wafers, interestingly, did not exhibit critical strength values for the PV industry, despite their noticeable density of extended defects.

Caracterización de colectores para sistemas de concentración fotovoltaica

Este proyecto, titulado “Caracterización de colectores para concentración fotovoltaica”, consiste en una aplicación en Labview para obtener las características de los elementos ópticos utilizados en sistemas de concentración fotovoltaica , atendiendo a la distribución espacial del foco de luz concentrado que generan. Un sistema de concentración fotovoltaica utiliza un sistema óptico para transmitir la radiación luminosa a la célula solar aumentando la densidad de potencia luminosa. Estos sistemas ópticos están formados por espejos o lentes para recoger la radiación incidente en ellos y concentrar el haz de luz en una superficie mucho menor. De esta manera se puede reducir el área de material semiconductor necesario, lo que conlleva una importante reducción del coste del sistema. Se pueden distinguir diferentes sistemas de concentración dependiendo de la óptica que emplee, la estructura del receptor o el rango de concentración. Sin embargo, ya que el objetivo es analizar la distribución espacial, diferenciaremos dos tipos de concentradores dependiendo de la geometría que presenta el foco de luz. El concentrador lineal o cilíndrico que enfoca sobre una línea, y el concentrador de foco puntual o circular que enfoca la luz sobre un punto. Debido a esta diferencia el análisis en ambos casos se realizará de forma distinta. El análisis se realiza procesando una imagen del foco tomada en el lugar del receptor, este método se llama LS-CCD (Difusión de luz y captura con CCD). Puede utilizarse en varios montajes dependiendo si se capta la imagen por reflexión o por transmisión en el receptor. En algunos montajes no es posible captar la imagen perpendicular al receptor por lo que la aplicación realizará un ajuste de perspectiva para obtener el foco con su forma original. La imagen del foco ofrece información detallada acerca de la uniformidad del foco mediante el mapa de superficie, que es una representación en 3D de la imagen pero que resulta poco manejable. Una representación más sencilla y útil es la que ofrecen los llamados “perfiles de intensidad”. El perfil de intensidad o distribución de la irradiancia que representa la distribución de la luz para cada distancia al centro, y el perfil acumulado o irradiancia acumulada que representa la luz contenida en relación también al centro. Las representaciones de estos perfiles en el caso de un concentrador lineal y otro circular son distintas debido a su diferente geometría. Mientras que para un foco lineal se expresa el perfil en función de la semi-anchura del receptor, para uno circular se expresa en función del radio. En cualquiera de los casos ofrecen información sobre la uniformidad y el tamaño del foco de luz necesarios para diseñar el receptor. El objetivo de este proyecto es la creación de una aplicación software que realice el procesado y análisis de las imágenes obtenidas del foco de luz de los sistemas ópticos a caracterizar. La aplicación tiene una interfaz sencilla e intuitiva para que pueda ser empleada por cualquier usuario. Los recursos necesarios para realizar el proyecto son: un PC con sistema operativo Windows, el software Labview 8.6 Professional Edition y los módulos NI Vision Development Module (para trabajar con imágenes) y NI Report Generation Toolkit (para realizar reportes y guardar datos de la aplicación). ABSTRACT This project, called “Characterization of collectors for concentration photovoltaic systems”, consists in a Labview application to obtain the characteristics of the optical elements used in photovoltaic concentrator, taking into account the spatial distribution of concentrated light source generated. A concentrator photovoltaic system uses an optical system to transmit light radiation to the solar cell by increasing the light power density. This optical system are formed by mirrors or lenses to collect the radiation incident on them and focus the beam of light in a much smaller surface area. In this way you can reduce the area of semiconductor material needed, which implies a significant reduction in system cost. There are different concentration systems depending on the optics used, receptor structure or concentration range. However, as the aim is to analyze the spatial distribution, distinguish between two types of concentrators depending on the geometry that has the light focus. The linear or cylindrical concentrator that focused on a line, and the circular concentrator that focused light onto a point. Because this difference in both cases the analysis will be carried out differently. The analysis is performed by processing a focus image taken at the receiver site, this method is called “LS-CCD” (Light Scattering and CCD recording). Can be used in several mountings depending on whether the image is captured by reflection or transmission on the receiver. In some mountings it is not possible to capture the image perpendicular to the receivers so that the application makes an adjustment of perspective to get the focus to its original shape. The focus image provides detail information about the uniformity of focus through the surface map, which is a 3D image representation but it is unwieldy. A simple and useful representation is provided by so called “intensity profiles”. The intensity profile or irradiance distribution which represents the distribution of light to each distance to the center. The accumulated profile or accumulated irradiance that represents the cumulative light contained in relation also to the center. The representation of these profiles in the case of a linear and a circular concentrator are different due to their distinct geometry. While for a line focus profile is expressed in terms of semi-width of the receiver, for a circular concentrator is expressed in terms of radius. In either case provides information about the uniformity and size of focus needed to design the receiver. The objective of this project is the creation of a software application to perform processing and analysis of images obtained from light source of optical systems to characterize.The application has a simple and a intuitive interface so it can be used for any users. The resources required for the project are: a PC with Windows operating system, LabVIEW 8.6 Professional Edition and the modules NI Vision Development Module (for working with images) and NI Report Generation Toolkit (for reports and store application data .)

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

An n(++)-GaAs/p(++)-AlGaAs tunnel junction with a peak current density of 10 100Acm(-2) is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500Acm(-2) and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies

The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained using two different exchange-correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto-electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material.

Defect engineering during the contact co-firing step in an industrial belt furnace

This work implements an optimization of the phosphorus gettering effect during the contact co-firing step by means of both simulations and experiments in an industrial belt furnace. An optimized temperature profile, named ‘extended co-firing step’, is presented. Simulations show that the effect of the short annealing on the final interstitial iron concentration depends strongly on the initial contamination level of the material and that the ‘extended co-firing’ temperature profile can enhance the gettering effect within a small additional time. Experimental results using sister wafers from the same multicrystalline silicon ingot confirm these trends and show the potential of this new defect engineering tool to improve the solar cell efficiency.

Photovoltaic performance of the dome-shaped Fresnel-Köhler concentrator

In order to have a cost-effective CPV system, two key issues must be ensured: high concentration factor and high tolerance. The novel concentrator we are presenting, the dome-shaped Fresnel-Köhler, can widely fulfill these two and other essential issues in a CPV module. This concentrator is based on two previous successful CPV designs: the FK concentrator with a flat Fresnel lens and the dome-shaped Fresnel lens system developed by Daido Steel, resulting on a superior concentrator. The concentrator has shown outstanding simulation results, achieving an effective concentration-acceptance product (CAP) value of 0.72, and an optical efficiency of 85% on-axis (no anti-reflective coating has been used). Moreover, Köhler integration provides good irradiance uniformity on the cell surface and low spectral aberration of this irradiance. This ensures an optimal performance of the solar cell, maximizing its efficiency. Besides, the dome-shaped FK shows optimal results for very compact designs, especially in the f/0.7-1.0 range. The dome-shaped Fresnel-Köhler concentrator, natural and enhanced evolution of the flat FK concentrator, is a cost-effective CPV optical design, mainly due to its high tolerances. Daido Steel advanced technique for demolding injected plastic pieces will allow for easy manufacture of the dome-shaped POE of DFK concentrator.