Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies
Data(s) |
01/02/2012
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Resumo |
The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained using two different exchange-correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto-electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
eng |
Publicador |
E.T.S.I. Telecomunicación (UPM) |
Relação |
http://oa.upm.es/16417/1/INVE_MEM_2012_133607.pdf http://onlinelibrary.wiley.com/doi/10.1002/pip.2173/abstract info:eu-repo/semantics/altIdentifier/doi/10.1002/pip.2173 |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
Progress in Photovoltaics: Research and Applications, ISSN 1099-159X, 2012-02 |
Palavras-Chave | #Telecomunicaciones #Electrónica #Química |
Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |