Quantenchemische Behandlung von elektronischem Energietransfer

Im Rahmen dieser Dissertation wurden quantenchemische Untersuchungen zum Phänomen des elektronischen Energietransfers durchgeführt. Zum einen wurden theoretische Modelle zur Berücksichtigung temperaturabhängiger Elektron-Phonon-Kopplung in vibronischen Spektren ausgearbeitet und numerischen Tests unterzogen. Zum anderen erfolgte die Bestimmung molekularer Eigenschaften bichromophorer Systeme unter Anwendung etablierter Rechenmethoden. Im Fokus stehen das Zusammenspiel elektronischer Kopplung und statischer Unordnung sowie Energietransferzeiten und der Einfluss molekularer Brücken in Dimeren auf die Kopplung. Da sich elektronischer Energietransfer spektroskopisch nachweisen lässt, wurden temperaturabhängige Simulationen der Linienform von vibronischen Übergängen, die an ein Wärmebad ankoppeln, durchgeführt. Die erforderliche Antwortfunktion zur Bestimmung der spektralen Linienform kann aus einer Kumulantenentwicklung und alternativ aus der Multi-Level Redfieldtheorie abgeleitet werden. Statt der genäherten Schwingungsstruktur des Brownschen Oszillatormodells wurde eine explizit berechnete Zustandsdichte als Ausgangspunkt verwendet. Sowohl reine Elektron-Phonon- als auch Schwingung-Phonon-Kopplung werden für verschiedene Spektraldichten der Badmoden diskutiert. Im Zuge eines Kooperationsprojekts führten wir Untersuchungen zur elektronischen Kopplung an einer homologen Reihe von Rylendimeren mit unterschiedlichen Brückenlängen durch. Zu diesem Zweck wurden Ergebnisse aus Tieftemperatureinzelmolekülmessungen und quantenchemischen Berechnungen auf Grundlage des vibronischen Kopplungsmodells herangezogen und ausgewertet. Die untersuchten Dimere zeigen einen Übergang vom Grenzfall starker Kopplung hin zu schwacher Kopplung und die mittleren Energietransferzeiten konnten in guter Übereinstimmung mit experimentellen Messwerten berechnet werden. Da eine molekulare Brücke zwischen Donor- und Akzeptoreinheit die elektronische Kopplung modifiziert, kann sie sich störend auf experimentelle Messungen auswirken. Daher wurde untersucht, ob das interchromophore Kopplungsverhalten vorwiegend durch die Polarisierbarkeit des verbrückenden Elements oder durch bindungsvermittelte Wechselwirkungen beeinflusst wird und welche Brückentypen sich folglich für experimentelle Studien eignen. Sämtliche untersuchten Brückenelemente führten zu einer Vergrößerung der elektronischen Kopplung und die Kopplungsstärke wurde maßgeblich durch brückenvermittelte Wechselwirkungen bestimmt.

Temperatur- und ortsabhängige Zustandsdichte des organischen Supraleiters Kappa-(BEDT-TTF) 2 Cu[N(CN) 2]Br

Im Rahmen dieser Arbeit wurde die temperatur- und ortsabhängige Zustandsdichte des organischen Supraleiters kappa-(BEDT-TTF)2Cu[N(CN)2]Br mit Rastertunnelspektroskopie bei tiefen Temperaturen untersucht.rnZusätzlich zur bereits bekannten supraleitenden Energielücke wird dabei eine logarithmische Unterdrückung der Zustandsdichte an der Fermikante beobachtet, die auch oberhalb der kritischen Temperatur erhalten bleibt. In der vorliegenden Arbeit wird gezeigt, dass sich dieses Verhalten durch ein für ungeordnete elektronische Systeme entwickeltes Modell unter Berücksichtigung von Coulomb-Wechselwirkungen beschreiben lässt. Die daraus resultierenden Fluktuationen der elektronischen Struktur führen zu einer Verbreiterung der gemessenen supraleitenden Energielücke, die sich durch sehr kleine Kohärenzmaxima im entsprechenden Quasiteilchenanregungsspektrum äußert. Dieses Verhalten wurde bereits beobachtet, konnte jedoch bisher nicht erklärt werden. Die theoretische Beschreibung der logarithmischen Unterdrückung trägt somit zusätzlich zum Verständnis des supraleitenden Beitrags bei, sodass die gesamte Zustandsdichte vollständig beschrieben werden kann. Die Analyse der gemessenen supraleitenden Energielücke wurde für verschiedene Symmetrien des Ordnungsparameters durchgeführt, wobei die beste Übereinstimmung für die Annahme einer d-wellenartigen Symmetrie mit zwei unterschiedlich stark ausgeprägten Energielücken gefunden wurde. Der Paarbildungsmechanismus, der zur Bindung zweier Elektronen zu einem Cooper-Paar führt, kann mit einer $d$-wellenartigen Symmetrie nicht durch die in konventionellen Supraleitern gefundene Elektron-Phonon-Kopplung erklärt werden. Stattdessen wird in Analogie zur Hochtemperatur-Supraleitung eine durch antiferromagnetische Spin-Wechselwirkungen induzierte Kopplung der Elektronen vermutet. Dies wird zum einen durch die oberhalb der kritischen Temperatur auftretende, zweite Energielücke und zum anderen durch die zwischen 4,66 und 5,28 liegende Kopplungsstärke 2Delta/(kB Tc) unterstützt, die deutlich größer als für konventionelle Supraleiter mit Elektron-Phonon-Kopplung ist.

Probing the decay characteristics of the Pygmy Dipole Resonance in the semi-magic nucleus 140 Ce with gamma-gamma coincidence measurements

Im Rahmen dieser Arbeit wurde ein neuartiger Experimentaufbau -- das γ3 Experiment -- zur Messung von photoneninduzierten Kern-Dipolanregungen in stabilen Isotopen konzipiert und an der High Intensity γ-Ray Source (HIγS) an der Duke University installiert.rnDie hohe Energieauflösung und die hohe Nachweiseffizienz des Detektoraufbaus, welcher aus einer Kombination von LaBr Szintillatoren und hochreinen Germanium-Detektoren besteht, erlaubt erstmals die effiziente Messung von γ-γ-Koinzidenzen in Verbindung mit der Methode der Kernresonanzfluoreszenz.rnDiese Methode eröffnet den Zugang zum Zerfallsverhalten der angeregten Dipolzustände als zusätzlicher Observablen, die ein detaillierteres Verständnis der zugrunde liegenden Struktur dieser Anregungen ermöglicht.rnDer Detektoraufbau wurde bereits erfolgreich im Rahmen von zwei Experimentkampagnen in 2012 und 2013 für die Untersuchung von 13 verschiedenen Isotopen verwendet. Im Fokus dieser Arbeit stand die Analyse der Pygmy-Dipolresonanz (PDR) im Kern 140Ce im Energiebereich von 5,2 MeV bis 8,3 MeV basierend auf den mit dem γ3 Experimentaufbau gemessenen Daten. Insbesondere das Zerfallsverhalten der Zustände, die an der PDR beteiligt sind, wurde untersucht. Der Experimentaufbau, die Details der Analyse sowie die Resultate werden in der vorliegenden Arbeit präsentiert. Desweiteren erlaubt ein Vergleich der Ergebnisse mit theoretischen Rechnungen im quasi-particle phonon model (QPM) eine Interpretation des beobachteten Zerfallsverhaltens.

Heusler compounds for thermoelectric applications

The demands for energy is leading to social and political conflicts in the world. For example, the limited resources of fossil fuels causing a dependence on the oil conveying countries in the world, leading to political discords. One way to save energy is to increase the efficiency of a process. In the field of thermoelectricity waste heat is used to produce electricity, this leads to an improvement of the efficiency. Heusler compounds with C1b structure with the general formula XY Z (X, Y = transition metal, Z = main group element) are in focus of the present thermoelectric research. Their mechanical and thermal stability is exceptional in comparison to the commonly used thermoelectric materials. The possibility to substitute small amounts of elements from the parent compound without destructing the lattice structure allows tuning the electronic properties. This tunability also allows to avoid the use of toxic and expensive elements. The reported thermoelectric Heusler compounds exhibit high electrical conductivity and moderate values of the Seebeck coefficients, which lead to a high powerfactor. The disadvantage of Heusler compounds is their high thermal conductivity. Introducing mass disorder on the X-site lattice is one effective way to produce additional phonon scattering and with it to decrease the thermal conductivity. Another approach is to implement a nano or micro structure in the thermoelectric material. This can be achieved by phase separation, composite materials, pulverization with additional spark plasma sintering or by a complex lattice structure. In the first part of this work, the influence of element substitutions on the Zr0.5Hf0.5NiSn system was investigated, to obtain the knowledge on how to optimize the electronic properties of the Heusler compounds with C1b structure. In line with this, the change of the electronic structure was investigated and a possible mechanism is predicted. In the second part of this work, the phenomenon of phase separation was investigated. First, by applying a phase separation in the well-known system Co2MnSn and subsequently by systematic investiga- tions on the TixZryHfzNiSn. In the third part, the results from the previous parts before were used to produce and explain the best reported Heusler compound with C1b structure exhibiting a Figure of Merit of ZT= 1.2 at 830 K.

Molecular dynamics simulations of silicate and borate glasses and melts : structure, diffusion dynamics and vibrational properties

Molecular dynamics simulations of silicate and borate glasses and melts: Structure, diffusion dynamics and vibrational properties. In this work computer simulations of the model glass formers SiO2 and B2O3 are presented, using the techniques of classical molecular dynamics (MD) simulations and quantum mechanical calculations, based on density functional theory (DFT). The latter limits the system size to about 100−200 atoms. SiO2 and B2O3 are the two most important network formers for industrial applications of oxide glasses. Glass samples are generated by means of a quench from the melt with classical MD simulations and a subsequent structural relaxation with DFT forces. In addition, full ab initio quenches are carried out with a significantly faster cooling rate. In principle, the structural properties are in good agreement with experimental results from neutron and X-ray scattering, in all cases. A special focus is on the study of vibrational properties, as they give access to low-temperature thermodynamic properties. The vibrational spectra are calculated by the so-called ”frozen phonon” method. In all cases, the DFT curves show an acceptable agreement with experimental results of inelastic neutron scattering. In case of the model glass former B2O3, a new classical interaction potential is parametrized, based on the liquid trajectory of an ab initio MD simulation at 2300 K. In this course, a structural fitting routine is used. The inclusion of 3-body angular interactions leads to a significantly improved agreement of the liquid properties of the classical MD and ab initio MD simulations. However, the generated glass structures, in all cases, show a significantly lower fraction of 3-membered planar boroxol rings as predicted by experimental results (f=60%-80%). The largest boroxol ring fraction of f=15±5% is observed in the full ab initio quenches from 2300 K. In case of SiO2, the glass structures after the quantum mechanical relaxation are the basis for calculations of the linear thermal expansion coefficient αL(T), employing the quasi-harmonic approximation. The striking observation is a change change of sign of αL(T) going along with a temperature range of negative αL(T) at low temperatures, which is in good agreement with experimental results.

Origin of the high upconversion green luminescence efficiency in -NaYF4:2% Er3+,20% Yb3+

Site-selective spectroscopy in hexagonal beta-NaYF4:Er3+,Yb3+ has revealed different environments for Er3+ ions (multisite formation). The low-temperature S-4(3/2) -> (I15/2Er3+)-I-4 green emission depends on the excitation wavelength associated with the F-4(7/2) Er3+ level. We have studied the effect of hydrostatic pressure on the green, red, and blue Er3+ emission upon NIR excitation at similar to 980 nm, in order to establish the role played by energy resonance conditions and the multiple Er3+ sites due to the disordered structure for the upconversion (UC) process (energy tuning). The variation of photoluminescence spectra and lifetimes as a function of pressure and temperature reveals that the origin of the high green UC efficiency of the beta-NaYF4:Er3+,Yb3+ compound is mainly due to the multisite distribution, and the low phonon energy of the host lattice.

First middle-atmospheric zonal wind profile measurements with a new ground-based microwave Doppler-spectro-radiometer

We report on the wind radiometer WIRA, a new ground-based microwave Doppler-spectro-radiometer specifically designed for the measurement of middle-atmospheric horizontal wind by observing ozone emission spectra at 142.17504 GHz. Currently, wind speeds in five levels between 30 and 79 km can be retrieved which makes WIRA the first instrument able to continuously measure horizontal wind in this altitude range. For an integration time of one day the measurement error on each level lies at around 25 m s−1. With a planned upgrade this value is expected to be reduced by a factor of 2 in the near future. On the altitude levels where our measurement can be compared to wind data from the European Centre for Medium-Range Weather Forecasts (ECMWF) very good agreement in the long-term statistics as well as in short time structures with a duration of a few days has been found. WIRA uses a passive double sideband heterodyne receiver together with a digital Fourier transform spectrometer for the data acquisition. A big advantage of the radiometric approach is that such instruments can also operate under adverse weather conditions and thus provide a continuous time series for the given location. The optics enables the instrument to scan a wide range of azimuth angles including the directions east, west, north, and south for zonal and meridional wind measurements. The design of the radiometer is fairly compact and its calibration does not rely on liquid nitrogen which makes it transportable and suitable for campaign use. WIRA is conceived in a way that it can be operated remotely and does hardly require any maintenance. In the present paper, a description of the instrument is given, and the techniques used for the wind retrieval based on the determination of the Doppler shift of the measured atmospheric ozone emission spectra are outlined. Their reliability was tested using Monte Carlo simulations. Finally, a time series of 11 months of zonal wind measurements over Bern (46°57′ N, 7°26′ E) is presented and compared to ECMWF wind data.

Analysis of transport properties of mechanically alloyed [Pb1-xSnxTe]

The work described in this thesis had two objectives. The first objective was to develop a physically based computational model that could be used to predict the electronic conductivity, Seebeck coefficient, and thermal conductivity of Pb1-xSnxTe alloys over the 400 K to 700 K temperature as a function of Sn content and doping level. The second objective was to determine how the secondary phase inclusions observed in Pb1-xSnxTe alloys made by consolidating mechanically alloyed elemental powders impact the ability of the material to harvest waste heat and generate electricity in the 400 K to 700 K temperature range. The motivation for this work was that though the promise of this alloy as an unusually efficient thermoelectric power generator material in the 400 K to 700 K range had been demonstrated in the literature, methods to reproducibly control and subsequently optimize the materials thermoelectric figure of merit remain elusive. Mechanical alloying, though not typically used to fabricate these alloys, is a potential method for cost-effectively engineering these properties. Given that there are deviations from crystalline perfection in mechanically alloyed material such as secondary phase inclusions, the question arises as to whether these defects are detrimental to thermoelectric function or alternatively, whether they enhance thermoelectric function of the alloy. The hypothesis formed at the onset of this work was that the small secondary phase SnO2 inclusions observed to be present in the mechanically alloyed Pb1-xSnxTe would increase the thermoelectric figure of merit of the material over the temperature range of interest. It was proposed that the increase in the figure of merit would arise because the inclusions in the material would not reduce the electrical conductivity to as great an extent as the thermal conductivity. If this were to be true, then the experimentally measured electronic conductivity in mechanically alloyed Pb1-xSnxTe alloys that have these inclusions would not be less than that expected in alloys without these inclusions while the portion of the thermal conductivity that is not due to charge carriers (the lattice thermal conductivity) would be less than what would be expected from alloys that do not have these inclusions. Furthermore, it would be possible to approximate the observed changes in the electrical and thermal transport properties using existing physical models for the scattering of electrons and phonons by small inclusions. The approach taken to investigate this hypothesis was to first experimentally characterize the mobile carrier concentration at room temperature along with the extent and type of secondary phase inclusions present in a series of three mechanically alloyed Pb1-xSnxTe alloys with different Sn content. Second, the physically based computational model was developed. This model was used to determine what the electronic conductivity, Seebeck coefficient, total thermal conductivity, and the portion of the thermal conductivity not due to mobile charge carriers would be in these particular Pb1-xSnxTe alloys if there were to be no secondary phase inclusions. Third, the electronic conductivity, Seebeck coefficient and total thermal conductivity was experimentally measured for these three alloys with inclusions present at elevated temperatures. The model predictions for electrical conductivity and Seebeck coefficient were directly compared to the experimental elevated temperature electrical transport measurements. The computational model was then used to extract the lattice thermal conductivity from the experimentally measured total thermal conductivity. This lattice thermal conductivity was then compared to what would be expected from the alloys in the absence of secondary phase inclusions. Secondary phase inclusions were determined by X-ray diffraction analysis to be present in all three alloys to a varying extent. The inclusions were found not to significantly degrade electrical conductivity at temperatures above ~ 400 K in these alloys, though they do dramatically impact electronic mobility at room temperature. It is shown that, at temperatures above ~ 400 K, electrons are scattered predominantly by optical and acoustical phonons rather than by an alloy scattering mechanism or the inclusions. The experimental electrical conductivity and Seebeck coefficient data at elevated temperatures were found to be within ~ 10 % of what would be expected for material without inclusions. The inclusions were not found to reduce the lattice thermal conductivity at elevated temperatures. The experimentally measured thermal conductivity data was found to be consistent with the lattice thermal conductivity that would arise due to two scattering processes: Phonon phonon scattering (Umklapp scattering) and the scattering of phonons by the disorder induced by the formation of a PbTe-SnTe solid solution (alloy scattering). As opposed to the case in electrical transport, the alloy scattering mechanism in thermal transport is shown to be a significant contributor to the total thermal resistance. An estimation of the extent to which the mean free time between phonon scattering events would be reduced due to the presence of the inclusions is consistent with the above analysis of the experimental data. The first important result of this work was the development of an experimentally validated, physically based computational model that can be used to predict the electronic conductivity, Seebeck coefficient, and thermal conductivity of Pb1-xSnxTe alloys over the 400 K to 700 K temperature as a function of Sn content and doping level. This model will be critical in future work as a tool to first determine what the highest thermoelectric figure of merit one can expect from this alloy system at a given temperature and, second, as a tool to determine the optimum Sn content and doping level to achieve this figure of merit. The second important result of this work is the determination that the secondary phase inclusions that were observed to be present in the Pb1-xSnxTe made by mechanical alloying do not keep the material from having the same electrical and thermal transport that would be expected from “perfect" single crystal material at elevated temperatures. The analytical approach described in this work will be critical in future investigations to predict how changing the size, type, and volume fraction of secondary phase inclusions can be used to impact thermal and electrical transport in this materials system.

Redox control of thermopower and figure of merit in phase-coherent molecular wires

We demonstrate how redox control of intra-molecular quantum interference in phase-coherent molecular wires can be used to enhance the thermopower (Seebeck coefficient) S and thermoelectric figure of merit ZT of single molecules attached to nanogap electrodes. Using first principles theory, we study the thermoelectric properties of a family of nine molecules, which consist of dithiol-terminated oligo (phenylene-ethynylenes) (OPEs) containing various central units. Uniquely, one molecule of this family possesses a conjugated acene-based central backbone attached via triple bonds to terminal sulfur atoms bound to gold electrodes and incorporates a fully conjugated hydroquinonecentral unit. We demonstrate that both S and the electronic contribution Z el T to the figure of merit ZT can be dramatically enhanced by oxidizing the hydroquinone to yield a second molecule, which possesses a cross-conjugated anthraquinone central unit. This enhancement originates from the conversion of the pi-conjugation in the former to cross-conjugation in the latter, which promotes the appearance of a sharp anti-resonance at the Fermi energy. Comparison with thermoelectric properties of the remaining seven conjugated molecules demonstrates that such large values of S and Z el T are unprecedented. We also evaluate the phonon contribution to the thermal conductance, which allows us to compute the full figure of merit ZT = Z el T/(1 + κ p/κ el), where κ p is the phonon contribution to the thermal conductance and κ el is the electronic contribution. For unstructured gold electrodes, κ p/κ el Gt⃒ 1 and therefore strategies to reduce κ p are needed to realize the highest possible figure of merit.

Si and SixGe1-x NWs studied by Raman spectroscopy

Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. The Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si and SiGe nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.

MicroRaman Spectroscopy of Si Nanowires: Influence of Size

Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals important thermal effects, which broaden and shift the one phonon Raman bands. The low thermal conductivity of the NWs and the low thermal dissipation are responsible for the temperature enhancement in the NW under the excitation with the laser beam. We have modeled, using finite element methods, the interaction between the laser beam and the NWs. The Raman spectrum of Si NWs is interpreted in terms of the temperature induced by the laser beam excitation, in correlation with finite element methods (fem) for studying the interaction between the laser beam and the NWs.

Improved GaN-based HEMT performance by nanocrystalline diamond capping

As a wide-bandgap semiconductor, gallium nitride (GaN) is an attractive material for next-generation power devices. To date, the capabilities of GaN-based high electron mobility transistors (HEMTs) have been limited by self-heating effects (drain current decreases due to phonon scattering-induced carrier velocity reductions at high drain fields). Despite awareness of this, attempts to mitigate thermal impairment have been limited due to the difficulties involved with placing high thermal conductivity materials close to heat sources in the device. Heat spreading schemes have involved growth of AIGaN/GaN on single crystal or CVD diamond, or capping of fullyprocessed HEMTs using nanocrystalline diamond (NCD). All approaches have suffered from reduced HEMT performance or limited substrate size. Recently, a "gate after diamond" approach has been successfully demonstrated to improve the thermal budget of the process by depositing NCD before the thermally sensitive Schottky gate and also to enable large-area diamond implementation.

Resonant behaviour of the barrier of YBa2Cu3O7 grain boundary Josephson junctions fabricated on bicrystalline substrates with different geometries

We have analyzed a resonant behavior in the dielectric constant associated to the barrier of YBa2Cu3O7 (YBCO) grain boundary Josephson junctions (GBJJs) fabricated on a wide variety of bicrystalline substrates: 12° [0 0 1] tilt asymmetric, 24° [0 0 1] tilt asymmetric, 24° [0 0 1] tilt symmetric, 24° [1 0 0] tilt asymmetric, 45° [1 0 0] tilt asymmetric and 24° [0 0 1] tilt symmetric +45° [1 0 0] tilt asymmetric bicrystals. The resonance analysis allows us to estimate a more appropriate value of the relative dielectric constant, and so a more adequate value for the length L of the normal N region assuming a SNINS model for the barrier. In this work, the L dependence on the critical current density Jc has been investigated. This analysis makes possible a single representation for all the substrate geometries independently on around which axes the rotation is produced to generate the grain boundary. On the other hand, no clear evidences exist on the origin of the resonance. The resonance frequency is in the order of 1011 Hz, pointing to a phonon dynamic influence on the resonance mechanism. Besides, its position is affected by the oxygen content of the barrier: a shift at low frequencies is observed when the misorientation angle increases.

Hexagonal patterns in a model for rotating convection

We study a model equation that mimics convection under rotation in a fluid with temperature- dependent properties (non-Boussinesq (NB)), high Prandtl number and idealized boundary conditions. It is based on a model equation proposed by Segel [1965] by adding rotation terms that lead to a Kuppers-Lortz instability [Kuppers & Lortz, 1969] and can develop into oscillating hexagons. We perform a weakly nonlinear analysis to find out explicitly the coefficients in the amplitude equation as functions of the rotation rate. These equations describe hexagons and os- cillating hexagons quite well, and include the Busse?Heikes (BH) model [Busse & Heikes, 1980] as a particular case. The sideband instabilities as well as short wavelength instabilities of such hexagonal patterns are discussed and the threshold for oscillating hexagons is determined.

Electrochemical potentials (Quasi-Fermi Levels) and the operation of hot-carrier, impact-ionization, and intermediate-band solar cells

In the framework of the so-called third generation solar cells, three main concepts have been proposed in order to exceed the limiting efficiency of single-gap solar cells: the hot-carrier solar cell, the impact-ionization or multiple-exciton-generation solar cell, and the intermediate-band solar cell. At first sight, the three concepts are different, but in this paper, we illustrate how all these concepts, including the single-gap solar cell, share a common trunk that we call "core photovoltaic material." We demonstrate that each one of these next-generation concepts differentiates in fact from this trunk depending on the hypotheses that are made about the physical principles governing the electron electrochemical potentials. In the process, we also clarify the differences between electron, phonon, and photon chemical potentials (the three fundamental particles involved in the operation of the solar cell). The in-depth discussion of the physics involved about the operation of these cells also provides new insights about the operation of these cells.