Experimental and Theoretical Investigations of Electronic Structure and Photoluminescence Properties of beta-Ag2MoO4 Microcrystals

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

SeP hole injection layer for devices based on organic materials

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Investigation of the structural, optical and dielectric properties of highly (100)-oriented (Pb0.60Ca0.20Sr0.20)TiO3 thin films on LaNiO3 bottom electrode

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Europium doped zinc sulfide: a correlation between experimental and theoretical calculations

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Structural, dielectric, ferroelectric and optical properties of PBCT, PBST and PCST complex thin films on LaNiO3 metallic conductive oxide layer coated Si substrates by the CSD technique

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

EPR, optical absorption and luminescence studies of Cr3+-doped antimony phosphate glasses

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Fabricação e caracterização de cerâmicas multifuncionais à base de CaSr3Cu3-xTi4O12 para aplicações ópticas e eletro-eletrônicas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A joint experimental and theoretical study on the electronic structure and photoluminescence properties of Al-2(WO4)(3) powders

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Synthesis and optical property of MgMoO4 crystals

In this work, we report on the synthesis of MgMoO4 crystals by oxide mixed method. The powder was calcined at 1100 degrees C for 4h and analyzed by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Field emission gun scanning electron microscopy (FEG-SEM), Ultraviolet-visible (UV-vis) absorption spectroscopy and Photoluminescence (PL) measurement. XRD analyses revealed that the MgMoO4 powders crystallize in a monoclinic structure and are free secondary phases. UV-vis technique was employed to determine the optical band gap of this material. MgMoO4 crystals exhibit an intense PL emission at room temperature with maximum peak at 579 nm (yellow region) when excited by 350 nm wavelength at room temperature.

Estudo da relação de ordem-desordem estrutural em nanopartículas de TiO2

Pós-graduação em Química - IQ

Síntese e caracterização de materiais semicondutores nanoestruturados luminescentes à base de ZnS

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural Refinement and Photoluminescence Properties of MnWO4 Nanorods Obtained by Microwave-Hydrothermal Synthesis

Manganese tungstate (MnWO4) nanorods were prepared at room temperature by the co-precipitation method and synthesized after processing in a microwave-hydrothermal (MH) system at 140 degrees C for 6-96 min. These nanorods were structurally characterized by X-ray diffraction (XRD), Rietveld refinements and Fourier transform (FT)-Raman spectroscopy. The growth direction, shape and average size distribution of nanorods were observed by means of transmission electron microscopy (TEM) and high resolution TEM (HR-TEM). The optical properties of the nanorods were investigated by ultraviolet visible (UV-vis) absorption and photoluminescence (PL) measurements. XRD patterns, Rietveld refinement data and FT-Raman spectroscopy indicate that the MnWO4 precipitate is not a single phase structure while the nanorods synthesized by MH processing have a wolframite-type monoclinic structure without deleterious phases. FT-Raman spectra exhibited the presence of 17 Raman-active modes from 50 to 1,000 cm(-1). TEM and HR-TEM micrographs indicated that the nanorods are aggregated due to surface energy by Van der Waals forces and grow along the [100] direction. UV-vis absorption measurements confirmed non-linear values for the optical band gap (from 3.2 to 2.72 eV), which increased as the MH processing time increased. The structural characterizations indicated that the presence of defects in the MnWO4 precipitate promotes a significant contribution to maximum PL emission, while MnWO4 nanorods obtained by MH processing decrease the PL emission due to the reduction of defects in the lattice.

Photoinduced electronic transitions and leakage correlation to defects/dislocations in GaN heterostructures

III-nitride materials are very promising for high speed electronics/optical applications but still suffer in performance due to problems during high quality epitaxial growth, evolution of dislocation and defects, less understanding of fundamental physics of materials/processing of devices etc. This thesis mainly focus on GaN based heterostructures to understand the metal-semiconductor interface properties, 2DE(H)G influence on electrical and optical properties, and deep level states in GaN and InAlN, InGaN materials. The detailed electrical characterizations have been employed on Schottky diodes at GaN and InAl(Ga)N/GaN heterostructures in order to understand the metal-semiconductor interface related properties in these materials. I have observed the occurrence of Schottky barrier inhomogenity, role of dislocations in terms of leakage and creating electrically active defect states within energy gap of materials. Deep level transient spectroscopy method is employed on GaN, InAlN and InGaN materials and several defect levels have been observed related to majority and minority carriers. In fact, some defects have been found common in characteristics in ternary layers and GaN layer which indicates that those defect levels are from similar origin, most probably due to Ga/N vacancy in GaN/heterostructures. The role of structural defects, roughness has been extensively understood in terms of enhancing the reverse leakage current, suppressing the mobility in InAlN/AlN/GaN based high electron mobility transistor (HEMT) structures which are identified as key issues for GaN technology. Optical spectroscopy methods have been employed to understand materials quality, sub band and defect related transitions and compared with electrical characterizations. The observation of 2DEG sub band related absorption/emission in optical spectra have been identified and proposed for first time in nitride based polar heterostructures, which is well supported with simulation results. In addition, metal-semiconductor-metal (MSM)-InAl(Ga)N/GaN based photodetector structures have been fabricated and proposed for achieving high efficient optoelectronics devices in future.

Silicon oxide nitride (sion) films per applicazioni fotovoltaiche

La ricerca, negli ultimi anni, si è concentrata sullo studio di materiali con energy gap più ampio del silicio amorfo a-Si per ridurre gli assorbimenti parassiti all'interno di celle fotovoltaiche ad eterogiunzione. In questo ambito, presso l'Università di Costanza, sono stati depositati layers di silicon oxynitride amorfo a-SiOxNy. Le promettenti aspettative di questo materiale legate all'elevato optical gap, superiore ai 2.0 eV, sono tuttavia ridimensionate dai problemi intrinseci alla struttura amorfa. Infatti la presenza di una grande quantit a di difetti limita fortemente la conducibilita e aumenta gli effetti di degradazione legati alla luce. In quest'ottica, nella presente tesi, sono stati riportati i risultati di analisi spettroscopiche eseguite presso il Dipartimento di Fisica e Astronomia di Bologna su campioni di silicon oxynitride nanocristallino nc-SiOxNy, analisi che hanno lo scopo di osservare come la struttura nanocristallina influisca sulle principali proprieta ottiche e sulla loro dipendenza da alcuni parametri di deposizione.

Soiling and other optical losses in solar-tracking PV plants in Navarra

Field data of soiling energy losses on PV plants are scarce. Furthermore, since dirt type and accumulation vary with the location characteristics (climate, surroundings, etc.), the available data on optical losses are, necessarily, site dependent. This paper presents field measurements of dirt energy losses (dust) and irradiance incidence angle losses along 2005 on a solar-tracking PV plant located south of Navarre (Spain). The paper proposes a method to calculate these losses based on the difference between irradiance measured by calibrated cells on several trackers of the PV plant and irradiance calculated from measurements by two pyranometers (one of them incorporating a shadow ring) regularly cleaned. The equivalent optical energy losses of an installation incorporating fixed horizontal modules at the same location have been calculated as well. The effect of dirt on both types of installations will accordingly be compared.