Catalyst composition and impurity-dependent kinetics of nanowire heteroepitaxy.

The mechanisms and kinetics of axial Ge-Si nanowire heteroepitaxial growth based on the tailoring of the Au catalyst composition via Ga alloying are studied by environmental transmission electron microscopy combined with systematic ex situ CVD calibrations. The morphology of the Ge-Si heterojunction, in particular, the extent of a local, asymmetric increase in nanowire diameter, is found to depend on the Ga composition of the catalyst, on the TMGa precursor exposure temperature, and on the presence of dopants. To rationalize the findings, a general nucleation-based model for nanowire heteroepitaxy is established which is anticipated to be relevant to a wide range of material systems and device-enabling heterostructures.

Prospects of III-nitride optoelectronics grown on Si.

The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

Carbon nanotube forests growth using catalysts from atomic layer deposition

We have grown carbon nanotubes using Fe and Ni catalyst films deposited by atomic layer deposition. Both metals lead to catalytically active nanoparticles for growing vertically aligned nanotube forests or carbon fibres, depending on the growth conditions and whether the substrate is alumina or silica. The resulting nanotubes have narrow diameter and wall number distributions that are as narrow as those grown from sputtered catalysts. The state of the catalyst is studied by in-situ and ex-situ X-ray photoemission spectroscopy. We demonstrate multi-directional nanotube growth on a porous alumina foam coated with Fe prepared by atomic layer deposition. This deposition technique can be useful for nanotube applications in microelectronics, filter technology, and energy storage. © 2014 AIP Publishing LLC.

Low-temperature growth of InN by MOCVD and its characterization

Metalorganic chemical vapor deposition growth of InN on sapphire substrate has been investigated between 400 degrees C and 500 degrees C to seek the growth condition of InN buffer layer, i.e. the first step of realization of the two-step growth method. Ex situ characterization of the epilayers by means of atomic force microscope, scanning electron microscope and X-ray diffraction, coupled with in situ reflectance curves, has revealed different growth circumstances at these temperatures, and conclusion has been reached that the most suitable temperature for buffer growth is around 450 degrees C. In addition, the growth rate of InN at the optimized temperature with regard to different precursor flow rates is studied at length. (c) 2004 Elsevier B.V. All rights reserved.

Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates

Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film.

High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates

Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

垃圾渗滤液场外硝化－原位反硝化脱氮协同填埋场温室气体减排

垃圾卫生填埋是国内外城市垃圾的主要处置方法。垃圾渗滤液是渗入填埋场垃圾的降水混合垃圾降解过程中产生的物质而形成的混合物，是垃圾填埋场向环境排放的主要污染物。渗滤液由于其所含高浓度有机和无机污染物，且其中很多物质有生物毒性或难生物降解，难于治理。特别是到填埋晚期，渗滤液中高浓度的氨氮更是增加了治理的难度。渗滤液场外硝化－原位反硝化是填埋场氮管理的新途径。本文利用从环境中筛选出优势硝化功能菌对渗滤液中的高浓度氨氮进行生物硝化，经硝化后的渗滤液回灌至以垃圾柱模拟的生物反应器填埋场，在填埋场内实现原位反硝化。 上述目标通过以下两部分来实现： 第一部分：渗滤液场外硝化。首先从污水厂的硝化污泥中富集并筛选出硝化功能菌，在模拟氨氮废水中优化。将驯化的硝化功能菌接种于连续式完全混合反应器（CSTR）进行高氨氮渗滤液硝化研究。在200余天的连续运行中，反应器硝化和有机物去除效果良好。在最大氨氮负荷和有机物负荷分别为0.65 g N l-1 d-1 和3.84 g COD l-1 d-1时，氨氮和COD去除率分别高于99%和57%。实验过程中发现，游离氨（FA）和溶解氧（DO）浓度对反应器中亚硝酸盐的积累影响很大。 第二部分：渗滤液原位反硝化。本文利用一个垃圾填充柱模拟生物反应器填埋场，研究了硝化渗滤液回灌对垃圾降解的影响，和回灌的硝化渗滤液中TON（总氧化态氮）对填埋场生物反应器产甲烷作用的影响。最后利用变性梯度凝胶电泳（DGGE）分析了硝化渗滤液回灌对垃圾填埋场菌群结构的影响。结果表明：回灌的TON被完全还原，反硝化为主要反应，最大TON负荷为28.6 mg N kg-1 TS d-1。当垃圾柱TON负荷大于11.4 mg N kg-1 TS d-1时，出现了产甲烷抑制，抑制作用随TON负荷的增加而加强。在此过程中，反硝化逐渐代替产甲烷作用成为填埋场内垃圾降解的主要反应，且更多产生的是清洁的氮气，而非温室气体甲烷。直到实验结束时，回灌硝化渗滤液的垃圾柱的甲烷产量仅相当于对照的2.5%，并且回灌的硝化渗滤液还加速了填埋场垃圾的降解与稳定。通过DGGE进行菌群结构分析发现，由于TON对填埋场的长期作用，反硝化菌增多而产甲烷菌减少。 Landfill still remains the chief method for MSW management around the world. Leachate is a mixture of rainfall permeating through landfill and organic and inorganic matters generated during decomposition of the wastes in the landfills, characterized as highly complicated and refractory wastewater. Ex-situ nitrification and sequential in-situ denitrification represents a novel approach to nitrogen management at landfills. In the present paper, nitrification was carried out in a continuous stirred tank reactor (CSTR) inoculated with nitrifying bacteria which were isolated from municipal WWTP of Chengdu city. The nitrified leachate from CSTR was recirculated to a lab-scale municipal solid waste (MSW) column where in-situ denitrification took place. The above object was achived through two parts as following: First, ex-situ nitification of leachate. After acclimated in simulated wastewater for 3 month, nitrifying bacteria isolated from WWTP nitrifying sludge were added to the CSTR for nitrification. The results over 200 days showed that the maximum nitrogen loading rate (NLR) and the maximum organic loading rate (OLR) was 0.65 g N l-1 d-1 and 3.84 g COD l-1 d-1, respectively. The ammonia and COD removal was over 99% and 57%, respectively. Moreover, the effects of free ammonia (FA) and dissolved oxygen (DO) on nitrification were investigated. Second, in-situ denitrification was studied in a municipal solid waste (MSW) column. Variation of nitrified leachate and its effects on the decomposition of municipal solid waste (MSW) were studied in a lab-scale MSW column to which nitrified leachate was recirculated. Additionally, DGGE was employed to investigate the microbial community of both MSW columns. The results suggested: complete reduction of total oxidized nitrogen (TON) was obtained with maximum TON load of 28.6 mg N kg-1 TS d-1 and denitrification was the main reaction responsible. Methanogenesis inhibition was observed while TON load was over 11.4 mg N kg-1 TS d-1 and the inhibition was enhanced with the increase of TON load. Denitrification gradually took over methanogenesis to become the main reaction responsible for decomposition of MSW while nitrogen gas, a clean byproduct, was generated instead. Till the end of the experiment, the average weekly methane production in the denitrification column was as low as 2.5% of that of the control, and the rate of decompition and stability of MSW was accelerated by the recirculation of the nitrified leachate.Owing to long term exposure of nitrified leachate to landfill, denitrifying bacteria increased and methanogen decreased.

Protein structural characterization by scanning tunneling microscopy with electrochemistry

The structure characterization of proteins or enzymes by STM on electrochemically prepared HOPG surface studied in this laboratory is reviewed. The serial structures of Hb were observed. The differences between the denaturation and inactivation of HRP were investigated by in situ and ex situ STM. The structural variation of Hb in an organic solvent was imaged while protein denaturation was easily observed in a polar solvent.

Scanning tunneling microscopy characterization of electrode materials in electrochemistry

Ex situ and in situ STM characterization of the electrode materials, including HOPG, GC, Au, Pt and other electrodes, is briefly surveyed and critically evaluated. The relationship between the electrode activity and surface microtopography is discussed.

Seed Germination of Swertia mussotii,an Important Application in Tibetan Folk Medicine

In this study,the effects of temperature,the growth regulator GA3 and storage conditions on seed germination of the biennial Swertia mussotii Franch were compared in seeds from a natural high altitude alpine site and after one-cycle of artificial cultivation at a low altitude.The untreated seeds from high altitude displayed higher germination than those from low altitude.Both GA3 and storage conditions enhanced germination from all sources.After treatment,the final germination of seeds from different sources shows no distinct difference.These results suggest that:(i) all seeds of this species,irrespective of their sources,have similar kinds of dormancy;(ii) the dormancy of this species can not been broken through one-cycle adaptation in ex situ cultivation and thus might be genetically controlled;(iii) both GA3 and 4℃ cold storage are effective for dormancy breaking in ex situ cultivation of this important medicinal species.

Pollinator shift and reproductive performance of the qinghai-tibetan plateau endemic and endangered Swertia przewalskii (Gentianaceae)

Reproductive failure results in many plant species becoming endangered. However, little is known of how and to what extent pollinator shifts affect reproductive performance of endangered species as a result of the artificial introduction of alien insects. In this study we examined breeding systems, visitor species, visiting frequency and seed set coefficients of Swertia przewalskii in two years that had different dominant pollinator species (native vs. alien). Flowers of this species were protandrous and herkogamous and insects were needed for the production of seeds. The stigmatic receptivity of this species was shorter than for other gentians. No significant difference in seed set coefficient was found for hand-pollinated plants between the two years, indicating that pollinator shift only had a minor effect on this plant's breeding system. The commonest pollinators in 2002 were native bumblebees, alien honeybees and occasional solitary bees, however, only alien honeybees were observed in 2004. The flower visitation rate in both years was relatively high, although the total visit frequency decreased significantly in 2004. The control flowers without any treatment produced significantly fewer seed sets in 2004 than in 2002. In the past decade the seed production of this species may have partly decreased due to pollination by alien honeybees, however, we suggest that they might have acted as alternative pollinators ensuring seed production of S. przewalskii when native pollinators were unavailable. The main reason that this plant is endangered is probably the result of habitat destruction, but changes in land use, namely intensified agricultural practice and unfavorable animal husbandry have also contributed to its decline. We recommend that in-situ conservation, including the establishment of a protected area, is the best way to preserve this species effectively.

Methane dehydroaromatization over Mo/HZSM-5 catalysts: The reactivity of MoCx species formed from MoOx associated and non-associated with Bronsted acid sites

The catalytic performances of methane dehydroaromatization (MDA) under non-oxidative conditions over 6 wt.% Mo/HZSM-5 catalysts calcined for different durations of time at 773 K have been investigated in combination with ex situ H-1 MAS NMR characterization. Prolongation of the calcination time at 773 K is in favor of the diffusion of the Mo species on the external surface and the migration of Mo species into the channels, resulting in a further decrease in the number of Bronsted acid sites, while causing only a slight change in the Mo contents of the bulk and in the framework structure of the HZSM-5 zeolite. The MoQ(x) species associated and non-associated with the Bronsted acid sites can be estimated quantitatively based on the 1H MAS NMR measurements as well as on the assumption of a stoichiometry ratio of 1: 1 between the Mo species and the Bronsted acid sites. Calcining the 6 wt.% Mo/HZSM-5 catalyst at 773 K for 18 h can cause the MoOx species to associate with the Bronsted acid sites, while a 6 Wt-% MO/SiO2 sample can be taken as a catalyst in which all MoOx species are non-associated with the Bronsted acid sites. The TOF data at different times on stream on the 6 wt.% Mo/HZSM-5 catalyst calcined at 773 K for 18 h and on the 6 Wt-% MO/SiO2 catalyst reveal that the MoCx species formed from MoOx associated with the Bronsted acid sites are more active and stable than those formed from MoOx non-associated with the Bronsted acid sites. An analysis of the TPO profiles recorded on the used 6 wt.% Mo/HZSM-5 catalysts calcined for different durations of time combined with the TGA measurements also reveals that the more of the MoCx species formed from MoOx species associated with the Br6nsted acid sites, the lower the amount of coke that will be deposited on it. The decrease of the coke amount is mainly due to a decrease in the coke burnt-off at high temperature. (c) 2005 Elsevier B.V. All rights reserved.