Self-assembled ZnO nanoparticles on ZnO microsheet: ultrafast synthesis and tunable photoluminescence properties

We report on the tunable photoluminescence characteristics of porous ZnO microsheets fabricated within 1-5 min of microwave irradiation in the presence of a capping agent such as citric acid, and mixture of citric acid with polyvinylpyrrolidone (PVP). The UV emission intensity reduces to 60% and visible emission increases tenfold when the molar concentration of citric acid is doubled. Further diminution of the intensity of UV emission (25%) is observed when PVP is mixed with citric acid. The addition of nitrogen donor ligands to the parent precursor leads to a red shift in the visible luminescence. The deep level emission covers the entire visible spectrum and gives an impression of white light emission from these ZnO samples. The detailed luminescence mechanism of our ZnO samples is described with the help of a band diagram constructed by using the theoretical models that describe the formation energy of the defect energy levels within the energy band structure. Oxygen vacancies play the key role in the variation of the green luminescence in the ZnO microsheets. Our research findings provide an insight that it is possible to retain the microstructure and simultaneously introduce defects into ZnO. The growth of the ZnO microsheets may be due to the self assembly of the fine sheets formed during the initial stage of nucleation.

Tunability of 1/f Noise at Multiple Dirac Cones in hBN Encapsulated Graphene Devices

The emergence of multiple Dirac cones in hexagonal boron nitride (hBN)-graphene heterostructures is particularly attractive because it offers potentially better landscape for higher and versatile transport properties than the primary Dirac cone. However, the transport coefficients of the cloned Dirac cones is yet not fully characterized and many open questions, including the evolution of charge dynamics and impurity scattering responsible for them, have remained unexplored. Noise measurements, having the potential to address these questions, have not been performed to date in dual-gated hBN graphene hBN devices. Here, we present the low frequency 1/f noise measurements at multiple Dirac cones in hBN encapsulated single and bilayer graphene in dual-gated geometry. Our results reveal that the low-frequency noise in graphene can be tuned by more than two-orders of magnitude by changing carrier concentration as well as by modifying the band structure in bilayer graphene. We find that the noise is surprisingly suppressed at the cloned Dirac cone compared to the primary Dirac cone in single layer graphene device, while it is strongly enhanced for the bilayer graphene with band gap opening. The results are explained with the calculation of dielectric function using tight-binding model. Our results also indicate that the 1/f noise indeed follows the Hooge's empirical formula in hBN-protected devices in dual-gated geometry. We also present for the first time the noise data in bipolar regime of a graphene device.

Enhanced Thermoelectric Performance at the Superionic Phase Transitions of Mixed Ion-Electron Conducting Materials

The quality of a thermoelectric material is judged by the size of its temperature de- pendent thermoeletric-figure-of-merit (zT ). Superionic materials, particularly Zn₄Sb₃ and Cu₂Se, are of current interest for the high zT and low thermal conductivity of their disordered, superionic phase. In this work it is reported that the super-ionic materials Ag₂Se, Cu₂Se and Cu_1.97Ag_0.03Se show enhanced zT in their ordered, normal ion-conducting phases. The zT of Ag₂Se is increased by 30% in its ordered phase as compared to its disordered phase, as measured just below and above its first order phase transition. The zT ’s of Cu₂Se and Cu_1.97Ag_0.03Se both increase by more than 100% over a 30 K temperatures range just below their super-ionic phase transitions. The peak zT of Cu₂Se is 0.7 at 406 K and of Cu_1.97Ag_0.03Se is 1.0 at 400 K. In all three materials these enhancements are due to anomalous increases in their Seebeck coefficients, beyond that predicted by carrier concentration measurements and band structure modeling. As the Seebeck coefficient is the entropy transported per carrier, this suggests that there is an additional quantity of entropy co-transported with charge carriers. Such co-transport has been previously observed via co-transport of vibrational entropy in bipolaron conductors and spin-state entropy in Na_xCo₂O₄. The correlation of the temperature profile of the increases in each material with the nature of their phase transitions indicates that the entropy is associated with the thermodynamcis of ion-ordering. This suggests a new mechanism by which high thermoelectric performance may be understood and engineered.

Energy spectrum of two-component Bose-Einstein condensates in optical lattices

With the method of Green's function, we investigate the energy spectra of two-component ultracold bosonic atoms in optical lattices. We End that there are two energy bands for each component. The critical condition of the superfluid-Mott insulator phase transition is determined by the energy band structure. We also find that the nearest neighboring and on-site interactions fail to change the structure of energy bands, but shift the energy bands only. According to the conditions of the phase transitions, three stable superfluid and Mott insulating phases can be found by adjusting the experiment parameters. We also discuss the possibility of observing these new phases and their transitions in further experiments.

Energy spectrum of ground state and excitation spectrum of quasi-particle for hard-core boson in optical lattices

We investigate the energy spectrum of ground state and quasi-particle excitation spectrum of hard-core bosons, which behave very much like spinless noninteracting fermions, in optical lattices by means of the perturbation expansion and Bogoliubov approach. The results show that the energy spectrum has a single band structure, and the energy is lower near zero momentum; the excitation spectrum gives corresponding energy gap, and the system is in Mott-insulating state at Tonks limit. The analytic result of energy spectrum is in good agreement with that calculated in terms of Green's function at strong correlation limit.

Absolute left-handed behaviors in a triangular elliptical-rod photonic crystal

In this paper we theoretically study the left-handed behaviors in a two-dimensional triangular photonic crystal made of elliptical rods in air. An absolute left-handed region is found in the second photonic band by using the plane wave expansion method to analyze the photonic band structure and equifrequency contours. Typical left-handed behaviors such as negative refraction, flat superlensing and plano-concave lensing are demonstrated by the finite-difference time-domain simulations. These behaviors are also compared with the quasi-negative refraction and the resulted focusing effects in a square-lattice two-dimensional photonic crystal. (c) 2005 Optical Society of America

Scattering by two degenerate anisotropic modes in square-lattice dielectric photonic crystals

We systematically investigate the square-lattice dielectric photonic crystals that have been used to demonstrate flat slab imaging experimentally. A right-handed Bloch mode is found in the left-handed frequency region by using the plane wave expansion method to analyze the photonic band structure and equifrequency contours. Using the multiple scattering theory, numerical simulations demonstrate that the left-handed mode and the right-handed mode are excited simultaneously by a point source and result in two kinds of transmitted waves. Impacted by the evanescent waves, superposition of these transmitted waves brings on complicated near field distributions such as the so-called imaging and its disappearance.

Negative refraction in a honeycomb-lattice photonic crystal

In this paper we theoretically investigate a photonic crystal with dielectric rods in a honeycomb lattice. Two left-handed frequency regions are found in the second and third photonic band by using the plane wave expansion method to analyze the photonic band structure and equifrequency contours. Subwavelength imaging by the photonic crystal flat lens are systematically studied by numerical simulations using the multiple scattering method. Different from the photonic crystals with noncircular dielectric rods in air, this structure is almost isotropic at the optimal frequency for superlensing. As a comparison, flat slab focusing is also demonstrated at other frequencies in the two left-handed regions. (c) 2006 Elsevier Ltd. All rights reserved.

Role of f electrons in the Fermi surface of the heavy fermion superconductor beta-YbAlB4.

We present a detailed quantum oscillation study of the Fermi surface of the recently discovered Yb-based heavy fermion superconductor beta-YbAlB4. We compare the data, obtained at fields from 10 to 45 T, to band structure calculations performed using the local density approximation. Analysis of the data suggests that f holes participate in the Fermi surface up to the highest magnetic fields studied. We comment on the significance of these findings for the unconventional superconducting properties of this material.

Angular dependence of domain wall resistivity in artificial magnetic domain structures.

We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behavior of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho downward arrow/rho upward arrow approximately 5.5, in good agreement with thin film band structure calculations.

Single-particle probing of edge-state formation in a graphene nanoribbon

We investigate the effect of a perpendicular magnetic field on the single-particle charging spectrum of a graphene quantum dot embedded inline with a nanoribbon. We observe uniform shifts in the single-particle spectrum which coincide with peaks in the magnetoconductance, implicating Landau level condensation and edge state formation as the mechanism underlying magnetic field-enhanced transmission through graphene nanostructures. The experimentally determined ratio of bulk to edge states is supported by single-particle band-structure simulations, while a fourfold beating of the Coulomb blockade transmission amplitude points to many-body interaction effects during Landau level condensation of the ν=0 state. © 2012 American Physical Society.

A nano-patterned photonic crystal laser with a dye-doped liquid crystal

Covering a nano-patterned titanium dioxide photonic crystal (PC) within a well-oriented film of dye-doped liquid crystal (LC), a distributed feedback laser is constructed whereby the emission characteristics can be manipulated in-situ using an electric field. This hybrid organic-inorganic structure permits simultaneous selectivity of both the beam pattern and laser wavelength by electrical addressing of the LC director. In addition, laser emission is obtained both in the plane and normal to the PC. Along with experimental data, a theoretical model is presented that is based upon an approximate calculation of the band structure of this birefringent, tuneable laser device. © 2013 AIP Publishing LLC.

Effect of bandgap narrowing on performance of modern power devices

The effect of the bandgap narrowing (BGN) on performance of power devices is investigated in detail in this paper. The analysis reveals that the change in the energy band structure caused by BGN can strongly affect the conductivity modulation of the bipolar devices resulting in a completely different performance. This is due to the modified injection efficiency under high-level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction, an analytical model for this phenomenon is developed. BGN model tuning has been proved to be essential in accurately predicting the performance of a lateral insulated-gate bipolar transistor (IGBT). Other devices such as p-i-n diodes or punch-through IGBTs are significantly affected by the BGN, while others, such as field-stop IGBTs or power MOSFETs, are only marginally affected. © 2013 IEEE.

Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs

Using self-consistent calculations of million-atom Schrodinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (MOSFET) based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/mu m when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage V-t. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.

Optically controlled quantum dot gated transistors with high on/off ratio

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.