Second-harmonic generation in Ge20As25S55 glass irradiated by an electron beam

Second-harmonic generation was observed in Ge(20)AS(25)S(55) chalcogenide glass irradiated by an electron beam. The second-harmonic intensity increased with increasing electron-beam current and accelerating voltage. The second-harmonic generation in Ge20As25S55 glass was caused by the space-charge electrostatic field that was generated by irradiation of an electron beam. Second-order nonlinearity chi ((2)) as great as 0.8 pm/V was obtained. The results of measurements of thermally stimulated depolarization current indicated that the glass was poled in the thin layers of its surface (several micrometers) and that the nonlinearity was stable. (C) 2001 Optical Society of America.

Loss comparison between an SPWM and harmonic elimination excited small, (<1kW) induction motor drive using Pspice simulation and calorimetry

Adopting square wave excitation to drive induction motors (IMs) can substantially reduce inverter switching losses. However, the low-order time harmonics inherent in the output voltage generates parasitic torques that degrade motor performance and reduce efficiency. In this paper, a novel harmonic elimination modulation technique with full voltage control is studied as an interesting and alternative means of operating small (<1kW) IM drives efficiently. A fully verified harmonic elimination scheme, which removes the 5th, 7th, 11th, 13th and 17 th time harmonics, was implemented and applied to an IGBT driven IM. The power losses incurred in the inverter and the IM as a result of the switching scheme have been determined. © 2008 Crown copyright.

700V smart trench IGBT with monolithic over-voltage and over-current protecting functions

An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.

An experimental study of loss sources in a fan operating with continuous inlet stagnation pressure distortion

The viability of Boundary Layer Ingesting (BLI) engines for future aircraft propulsion is dependent on the ability to design robust, efficient engine fan systems for operation with continuously distorted inlet flow. A key step in this process is to develop an understanding of the specific mechanisms by which an inlet distortion affects the performance of a fan stage. In this paper, detailed full-annulus experimental measurements of the flow field within a low-speed fan stage operating with a continuous 60-degree inlet stagnation pressure distortion are presented. These results are used to describe the three-dimensional fluid mechanics governing the interaction between the fan and the distortion and to make a quantitative assessment of the impact on loss generation within the fan. A 5.3 percentage point reduction in stage total-to-total efficiency is observed as a result of the inlet distortion. The reduction in performance is shown to be dominated by increased loss generation in the rotor due to off-design incidence values at its leading edge, an effect which occurs throughout the annulus despite the localised nature of the inlet distortion. Increased loss generation in the stator row is also observed due to flow separations that are shown to be caused by whirl angle distortion at rotor exit. By addressing these losses, it should be possible to achieve improved efficiency in BLI fan systems. Copyright © 2012 by ASME.

An experimental study of loss sources in a fan operating with continuous inlet stagnation pressure distortion

The viability of boundary layer ingesting (BLI) engines for future aircraft propulsion is dependent on the ability to design robust, efficient engine fan systems for operation with continuously distorted inlet flow. A key step in this process is to develop an understanding of the specific mechanisms by which an inlet distortion affects the performance of a fan stage. In this paper, detailed full-annulus experimental measurements of the flow field within a low-speed fan stage operating with a continuous 60 deg inlet stagnation pressure distortion are presented. These results are used to describe the three-dimensional fluid mechanics governing the interaction between the fan and the distortion and to make a quantitative assessment of the impact on loss generation within the fan. A 5.3 percentage point reduction in stage total-to-total efficiency is observed as a result of the inlet distortion. The reduction in performance is shown to be dominated by increased loss generation in the rotor due to off-design incidence values at its leading edge, an effect that occurs throughout the annulus despite the localized nature of the inlet distortion. Increased loss in the stator row is also observed due to flow separations that are shown to be caused by whirl angle distortion at rotor exit. By addressing these losses, it should be possible to achieve improved efficiency in BLI fan systems. © 2013 by ASME.

Modeling sub-threshold current-voltage characteristics in thin film transistors

In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous semiconductor channel. Both drift and diffusion current components are considered and combined using an harmonic average. Here, the diffusion component describes the exponential current behavior due to interfacial deep states, while the drift component is associated with presence of localized deep states formed by dangling bonds broken from weak bonds in the bulk and follows a power law. The proposed model yields good agreement with measured results. © 2013 IEEE.

Effects of indium ion implantation on the total dose hardness of fully depleted SOI NMOSFET

In this work, we investigate the effects of the indium ion implantation towards the back-channel interface on the total dose hardness of the n-channel SOI MOSFET. The results show that the indium implant has slight impact on the normal threshold voltage while preserving low leakage current after irradiation. The advantage is attributed to the narrow as-implanted and postanneal profile of the indium implantation. Two-dimensional simulations have been used to understand the physical mechanisms of the effects.

Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.

Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing

Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. The remarkable total-dose irradiation tolerance of SIMON materials was confirmed by few shifts of drain leakage current-gate source voltage (I-V) curves of PMOS transistors fabricated on SIMON materials before and after irradiation.

Current-voltage characteristics in strongly correlated double quantum dots

We have studied the current-voltage properties of a double quantum dot (DQD) connected by leads in arrangements that vary from series to symmetrical parallel configurations, in the presence of strong intradot Coulomb interaction. The influences of the connecting configurations and the difference between dot levels on the magnitude and symmetry of the total current are examined. We find that the connecting configurations of the dots can determine the number of the current paths and in turn determine the magnitude of the current, while the coupling strengths between the dots and the leads together with the difference of dot levels determine the current-voltage symmetry. The negative differential conductance observed in serial DQD can be explained in terms of the reduction of the current paths. (c) 2005 American Institute of Physics.

A voltage-adjustable three-phase rectifier with constant power flow

An three phase adjustable output voltage rectifier with constant power flow based on waveform gap patching principle is resented. By patching the gapes in the phase currents in parallel way as well as the ripple of the output voltage in series way, it implements the constant power flow from the three-phase line to the DC output without using any line frequency (and its harmonics) energy storage components. Principally, by treating only 22.4% power of the needed power output, this rectifier can supply constant power flow with adjustable output voltages without bring about any harmonic interferences to the power utility and achieve unite power factor.

Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC

This paper presents the total dose radiation performance of 0. S^m SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad(Si) .The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at lMrad(Si) and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to lMrad(Si). The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad(Si).

Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.

Entanglement between collective operators in a linear harmonic chain

We investigate entanglement between collective operators of two blocks of oscillators in an infinite linear harmonic chain. These operators are defined as averages over local operators (individual oscillators) in the blocks. On the one hand, this approach of "physical blocks" meets realistic experimental conditions, where measurement apparatuses do not interact with single oscillators but rather with a whole bunch of them, i.e., where in contrast to usually studied "mathematical blocks" not every possible measurement is allowed. On the other, this formalism naturally allows the generalization to blocks which may consist of several noncontiguous regions. We quantify entanglement between the collective operators by a measure based on the Peres-Horodecki criterion and show how it can be extracted and transferred to two qubits. Entanglement between two blocks is found even in the case where none of the oscillators from one block is entangled with an oscillator from the other, showing genuine bipartite entanglement between collective operators. Allowing the blocks to consist of a periodic sequence of subblocks, we verify that entanglement scales at most with the total boundary region. We also apply the approach of collective operators to scalar quantum field theory.

Even order harmonic Series-L/Parallel-Tuned Class-E frequency multiplier

In this brief, we propose a new Class-E frequency multiplier based on the recently introduced Series-L/Parallel-Tuned Class-E amplifier. The proposed circuit produces even-order output harmonics. Unlike previously reported solutions the proposed circuit can operate under 50% duty ratio which minimizes the conduction losses. The circuit also offers the possibility for increased maximum operating frequency, reduced peak switch voltage, higher load resistance and inherent bond wire absorption; all potentially useful in monolithic microwave integrated circuit implementations. In addition, the circuit topology suggested large transistors with high output capacitances can be deployed. Theoretical design equations are given and the predictions made using these are shown to agree with harmonic balance circuit simulation results.