Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Theoretical analysis of the energy levels induced by oxygen vacancies and the doping process (Co, Cu and Zn) on SnO2 (110) surface models

Density functional calculation at B3LYP level was employed to study the surface oxygen vacancies and the doping process of Co, Cu and Zn on SnO2 (110) surface models. Large clusters, based on (SnO2)(15) models, were selected to simulate the oxidized (Sn15O30), half-reduced (Sn15O29) and the reduced (Sn15O28) surfaces. The doping process was considered on the reduced surfaces: Sn13Co2O28, Sn13Cu2O28 and Sn13Zn2O28. The results are analyzed and discussed based on a calculation of the energy levels along the bulk band gap region, determined by a projection of the monoelectron level structure on to the atomic basis set and by the density of states. This procedure enables one to distinguish the states coming from the bulk, the oxygen vacancies and the doping process, on passing from an oxidized to a reduced surface, missing bridge oxygen atoms generate electronic levels along the band gap region, associated with 5s/5p of four-/five-fold Sn and 2p of in-plane O centers located on the exposed surface, which is in agreement with previous theoretical and experimental investigations. The formation energy of one and two oxygen vacancies is 3.0 and 3.9 eV, respectively. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Effect of the doping medium on blends of polyurethane and polyaniline

Flexible and free-standing films from blends of polyurethane, based on castor oil, and polyaniline were obtained with various compositions by casting. Significant increase on conductivity followed by a considerable decrease on doping time was obtained by doping the films in N,N-dimethylformamide (DMF) solution with p-toluene sulphonic acid (TSA) or HCl instead of the conventional doping in aqueous solution. This doping efficiency is proposed to be due to an improved swelling of the blend structure caused by the solvent. The electrical conductivity increases significantly upon polyaniline content increase reaching 10(-2) S/cm for a polyaniline content of about 10% (w/w).

Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Simultaneous observation of the magnetic and electric behavior in a correlated system near a metal-semiconductor transition: ESR in pellets of conducting polymers

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A homovalent doping in PMN ceramics by using lithium and scandium cations

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influence of rare earth doping on the structural and catalytic properties of nanostructured tin oxide

Nanoparticles of tin oxide, doped with Ce and Y, were prepared using the polymeric precursor method. The structural variations of the tin oxide nanoparticles were characterized by means of nitrogen physisorption, carbon dioxide chemisorption, X-ray diffraction, and X-ray photoelectron spectroscopy. The synthesized samples, undoped and doped with the rare earths, were used to promote the ethanol steam reforming reaction. The SnO2-based nanoparticles were shown to be active catalysts for the ethanol steam reforming. The surface properties, such as surface area, basicity/base strength distribution, and catalytic activity/selectivity, were influenced by the rare earth doping of SnO2 and also by the annealing temperatures. Doping led to chemical and micro-structural variations at the surface of the SnO2 particles. Changes in the catalytic properties of the samples, such as selectivity toward ethylene, may be ascribed to different dopings and annealing temperatures.

Photocatalyst TiO2-Co: the effect of doping depth profile on methylene blue degradation

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photoelectrocatalytical degradation of basic blue 41 dye using nanoporous semiconductor of Ti/TiO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Sintering of tin oxide and its applications in electronics and processing of high purity optical glasses

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Evaluation of rare earth oxides doping SnO2.(Co1/4,Mn3/4)O-based varistor system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

An ab initio study of oxygen vacancies and doping process of Nb and Cr atoms on TiO2 (110) surface models

We theoretically investigated how the formation of oxygen vacancies and the addition of niobium and chromium atoms as dopants modify the varistor properties of TiO2. The calculations were carried out at the HF level using a contracted basis set, developed by Huzinaga et al.. to represent the atomic centers on the (110) surface for the large (TiO2)(15) cluster model. The change of the values for the net atomic charges and band gap after oxygen vacancy formation and the presence of dopants in the lattice are analyzed and discussed. It is shown that the formation of oxygen vacancies decreases the band gap while an opposite effect is found when dopants are located in the reduced surface. The theoretical results are compared with available experimental data. A plausible explanation of the varistor behavior of this system is proposed. (C) 1997 John Wiley & Sons, Inc.

ac conductivity and conduction mechanism of NaNbO3 semiconductor antiferroelectric ceramic: A relaxational approach at high temperature

The electric properties of the sodium niobate perovskite ceramic were investigated by impedance spectroscopy in the frequency range from 5 Hz to 13 MHz and from room temperature up to 1073 K, in a thermal cycle. Both capacitance and conductivity exhibit an anomaly at around 600 K as a function of the temperature and frequency. The electric conductivity as a function of angular frequency sigma(omega) follows the relation sigma(omega)=Aomega(s). The values of the exponent s lie in the range 0.15less than or equal tosless than or equal to0.44. These results were discussed considering the conduction mechanism as being a type of polaron hopping. (C) 2003 American Institute of Physics.

Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor

The effect of La2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01 CoO + 0.0005 Nb2O5 + x La2O5 system, where x = 0.0005 or 0.00075, was considered in this study. The samples were sintered at 1300 degreesC for 2 and 4 h and a single SnO2 phase was identified by X-ray diffraction. Microstructure analysis by scanning electron microscopy showed that the affect of La2O3 addition is to decrease the SnO2 grain size. J versus E curves indicated that the system exhibits a varistor behavior and the effect of La2O3 is to increase both the non-linear coefficient (alpha) and the breakdown voltage (E-2). Considering the Schottky thermionic emission model the potential height and the width were estimated. The addition of small amounts of La2O3 to the basic system increases the potential barrier height and decreases both grain size and potential barrier width. (C) 2001 Kluwer Academic Publishers.

Doping of polyaniline by corona discharge

In the present article it is shown that a corona discharge can be employed to dope thin films of polyaniline (PANI) coated on poly(ethylene terephthalate) films, allowing the electrical conductivity to be tuned within the range 10(-10) to 0.3 S cm(-1). A study of the effect of different corona conditions, namely corona treatment for positive and negative polarities, air humidity, treatment time, corona current, and the geometry of the corona triode, on the electrical conductivity of the polyaniline is presented. The results indicate that the corona discharge leads to protonic doping of polyaniline similar to that which occurs in conventional protonic acid solution doping. Atomic force microscopic analysis shows that, as the PANI is exposed to the corona discharge, its globular morphology is disrupted leading to the appearance of droplet-like features and a significant decrease in the average height and surface roughness. Doping by corona discharge presents several advantages over the conventional solution method namely that it is a dry process which does not require use of chemicals reagents, and which is both rapid and avoids dopant migration. The latter can be important for applications of PANI in microelectronic devices. (C) 2000 American Institute of Physics. [S0021-8979(00)01608-X].