强流高电荷态Pb离子束的产生与优化研究(英文)

随着原子物理及表面物理研究的发展,高电荷态金属离子束的需求日益增多.近来,在中国科学院近代物理研究所14.5GHzLECR3离子源实验平台上,以炉子法产生的铅离子束作为研究对象,进行了一系列ECR离子源关键参数(如:磁场、炉子功率、掺气等)影响高电荷态铅离子束产额的实验研究,在此基础上,调整优化了LECR3离子源的状态参数,从而获得了强流高电荷态铅离子束18eμA207pb30+和6.7eμA207pb37+.

高能Pb离子辐照注碳SiO_2的红外谱研究

室温下,先用120keV的C离子注入二氧化硅薄膜样品至剂量2.0×1017,5.0×1017或8.6×1017ions/cm2,再用950MeV的Pb离子分别辐照至剂量5.0×1011,1.0×1012或3.8×1012ions/cm2,然后测量样品的傅里叶变换红外(FTIR)光谱.通过分析测量得到的傅里叶变换红外谱,发现Pb离子辐照在注碳SiO2样品中可引起大量的Si—C和Si(C)—O—C等化学键的形成,大剂量Pb离子辐照可在大剂量注碳的SiO2中产生分子CO2.大量的Si—C键的存在和分子CO2的形成,预示着高能Pb离子辐照在注碳SiO2样品中有可能形成了纳米Si团簇和/或SiC晶粒.

Atmospheric cu and pb deposition and transport in lake sediments in a remote mountain area；northern China

IEECAS SKLLQG

Assessing soil erosion rates on manually-tilled hillslopes in the Sichuan Hilly Basin using Cs-137 and Pb-210(ex) measurements

IEECAS SKLLQG

具有Pb衬的Tb薄靶的制备

采用滚压法制备Ｔｂ靶，采用滚压法或真空蒸发法制得Ｐｂ膜，两者通过滚压或真空蒸发法结合制得了带Ｐｂ村的Ｔｂ薄靶。

50MeV/u~(20)Na+~(208)Pb→p+~(19)Ne+~(208)Pb反应的探测效率模拟

用半经典模型考虑20Ｎａ＋２０８Ｐｂ→ｐ＋１９Ｎｅ＋２０８Ｐｂ的Ｃｏｕｌｏｍｂ解离过程。用ＭｏｎｔｅＣａｒｌｏ方法计算前角放置的望远镜阵列对Ｃｏｕｌｏｍｂ解离碎片的探测效率。讨论了天体环境下ｐ＋１９Ｎｅ→２０Ｎａ俘获反应道的低能级共振截面测量的可行性。

Sputtering induced by highly charged Pb-208(q+) bombardment on Al surface

Highly charged ions (HCls) carrying high Coulomb potential energy (E-p) could cause great changes in the physical and chemical properties of material surface when they bombard on the solid surface. In our work, the secondary ion yield dependence on highly charged Pbq+ (q = 4-36) bombardment on Al surface has been investigated. Aluminum films (99.99%) covered with a natural oxide film was chosen as our target and the kinetic energy (E-k) was varied between 80 keV and 400 keV. The yield with different incident angles could be described well by the equation developed by us. The equation consists of two parts due to the kinetic sputtering and potential sputtering. The physical interpretations of the coefficients in the said equation are discussed. Also the results on the kinetic sputtering produced by the nuclear energy loss on target Surface are presented.

Surface erosion of GaN bombarded by highly charged Pb-208(q+)-Ions

Surface change of gallium nitride specimens after bombardment by highly charged Pbq+-ions (q = 25, 35) at room temperature is studied by means of atomic force microscopy. The experimental results reveal that the surface of GaN specimens is significantly etched and erased. An unambiguous step-up is observed. The erosion depth not only strongly depends on the charge state of ions, but also is related to the incident angle of Pbq+-ions and the ion dose. The erosion depth of the specimens in 60 incidence (tilted incidence) is significantly deeper than that of the normal incidence. The erosion behaviour of specimens has little dependence on the kinetic energy of ion (E-k = 360, 700 keV). On the other hand, surface roughness of the irradiated area is obviously decreased due to erosion compared with the un-irradiated area. A fiat terrace is formed.

Nuclear stopping and compression in heavy-ion collisions at intermediate energies

The nuclear stopping and the radial flow are investigated with an isospin-dependent quantum molecular dynamics (IQMD) model for Ni + Ni and Pb + Pb from 0.4 to and 1.2 GeV/u. The expansion velocity as well as the degree of nuclear stopping are higher in the heavier system at all energies. The ratio between the flow energy and the total available energy in center of mass of the colliding systems exhibits a positive correlation to the degree of nuclear stopping. The maximum density (rho(max)) achieved in the compression is comparable to the hydrodynamics prediction only if the non-zero collision time effect is taken into account in the later. Due to the partial transparency, the growing of the maximum density achieved in the central region of the fireball with the increase of beam energy becomes gradually flat in the 1 GeV/u energy regime. (C) 2008 Elsevier B.V. All rights reserved.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Effects of annealing on the photoluminescence of He ion implanted sapphire after 230-MeV Pb ion irradiation

Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(27), ions with energy of 1.1 MeV/u to the fluences ranging from 1 X 10(12) to 5 X 10(14) ion/cm(2) and subsequently annealed at 600, 900 and 1100 K. The obtained PL spectra showed that emission peaks centred at 375, 390, 413, and 450 nm appeared in irradiated samples. The peak of 390 ran became very intense after 600 K annealing. The peak of 390 nm weakened and 510 nm peak started to build up at 900 K annealing, the peak of 390 nm vanished and 510 nm peak increased with the annealing temperature rising to 1100 K. Infrared spectra showed a broadening of the absorption band between 460 cm(-1), and 510 cm(-1) indicating strongly damaged regions being formed in the Al2O3 samples and position shift of the absorption band at 1000-1300 cm(-1) towards higher wavenumber after Pb irradiation.

Pb isotope shifts in the relativistic mean field theory

The ground state properties of the Pb isotopic are studied by using the axially deformed relativistic mean field (RMF) calculation with the parameter set TM1. The pairing correlation is treated by the BCS method and the isospin dependent pairing force is used. The 'blocking' method is used to deal with unpaired nucleons. The theoretical results show that the relativistic mean field theory with non-linear self-interactions of mesons provides a good description of the binding energy and neutron separation energy. The present paper focus on the physical mechanism of the Pb isotope shifts.

Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation

In the present work the photoluminescence (PL) character of sapphire implanted with 110-keV He, Ar or Ne ions and subsequently irradiated with 230-MeV Pb was studied. The implantation was performed at 320 and 600 K using fluences from 5.0 x 10(16) to 2.0 x 10(17) ions/cm(2). The Pb ion irradiation was carried out at 320 K. The obtained PL spectra showed peaks at 375, 413 and 450 nm with maximum intensity at an implantation fluence of 5.0 x 10(16) ions/cm(2) and a new peak at 390 nm appeared in the He-implanted and subsequently Pb-irradiated samples. Infrared spectra showed a broadening of the absorption band between 460 and 510 nm indicating strongly damaged regions formed in the Al2O3 samples. A possible PL mechanism is discussed.