Low voltage four-quadrant current multiplier: An improved topology for n-well CMOS process

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Novel zero-current-switching PWM converters

This paper presents a new family of pulsewidth-modulated (PWM) converters, featuring soft commutation of the semiconductors at zero current (ZC) in the transistors and zero voltage (ZV) in the rectifiers, Besides operating at constant frequency and with reduced commutation losses, these new converters have output characteristics similar to the hard-switching-PWM counterpart, which means that there is no circulating reactive energy that would cause large conduction losses, the new family of zero-current-switching (ZCS)-PWM converters is suitable for high-power applications using insulated gate bipolar transistors (IGBT's). The advantages of the new ZCS-PWM boast converter employing IGBT's, rated at 1.6 kW and operating at 20 kHz, are presented, This new ZCS operation can reduce the average total power dissipation in the semiconductors practically by half, when compared with the hard-switching method, This new ZCS-PWM boost converter is suitable for high-power applications using Ie;BT's in power-factor correction, the principle of operation, theoretical analysis, and experimental results of the new ZCS-PWM boost converter are provided in this paper to verify the performance of this new family of converters.

Low voltage analog synthesizer of orthogonal signals: A current-mode approach

An analog synthesizer of orthogonal signals for digital CMOS technology and 3V supply voltage is presented. The adaptive architecture accomplishes the synthesis of mutually orthogonal signal, such as trigonometric and polynomial basis. Experimental results using 0.35 mu m AMS CMOS process are presented for generation of the cosine and Legendre basis.

Low voltage analog synthesizer of orthogonal signals using current mode techniques

An analog synthesizer of orthogonal signals for digital CMOS technology and 3V supply voltage is presented. The adaptive architecture accomplishes the synthesis of mutually orthogonal signal, such as trigonometric and polynomial basis. Simulation results using 0.35 mu m AMS CMOS process are presented for generation of the cosine and Legendre basis.

Low voltage four-quadrant current multiplier: an improved topology for n-well CMOS process

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

BARRIER VOLTAGE DEFORMATION OF ZNO VARISTORS BY CURRENT PULSE

The phenomenon of electrical degradation in ZnO varistors was studied by application of high-intensity current pulses. A wave shape of 8 X 20-mu-s and rectangular waves of 1 and 2 ms were used. The degradation was estimated by reference electric-field variation and by Schottky voltage barrier deformation. The results showed that current pulses reduce both the height and the width of the barrier voltage. It was also observed that the donor density N(d) did not change but the surface states density N(s) decreased with degradation.

A low-voltage wide-swing programmable-gain current amplifier

A CMOS low-voltage, wide-swing continuous-time current amplifier is presented. Exhibiting an open-loop architecture, the circuit is composed of transresistance and transconductance stages built upon triode-operating transistors. In addition to an extended dynamic range, the current gain can be programmed within good accuracy by a rapport involving only transistor geometries and tuning biases. Low temperature-drift on gain setting is then expected.In accordance with a 0.35 mum n-well CMOS fabrication process and a single 1.1 V-supply, a balanced current-amplifier is designed for a programmable gain-range of 6 - 34 dB and optimized with respect to dynamic range. Simulated results from PSPICE and Bsim3v3 models indicate, for a 100 muA(pp)-output current, a THD of 0.96 and 1.87% at 1 KHz and 100 KHz, respectively. Input noise is 120 pArootHz @ 10 Hz, with S/N = 63.2 dB @ 1%-THD. At maximum gain, total quiescent consumption is 334 muW. Measurements from a prototyped amplifier reveal a gain-interval of 4.8-33.1 dB and a maximum current swing of 120 muA(pp). The current-amplifier bandwidth is above 1 MHz.

Effect of combined bending strain and thermal cycling on the voltage-current characteristic curves of Bi-2223 tapes

High critical temperature superconductors are evolving from a scientific research subject into large-scale application devices. In order to meet this development demand they must withstand high current capacity under mechanical loads arising from thermal contraction during cooling from room temperature down to operating temperature (usually 77 K) and due to the electromagnetic forces generated by the current and the induced magnetic field. Among the HTS materials, the Bi2Sr2Ca2Cu3Ox, compound imbedded in an Ag/AgMg sheath has shown the best results in terms of critical current at 77 K and tolerance against mechanical strain. Aiming to evaluate the influence of thermal stress induced by a number of thermal shock cycles we have evaluated the V-I characteristic curves of samples mounted onto semicircular holders with different curvature radius (9.75 to 44.5 mm). The most deformed sample (epsilon = 1.08%) showed the largest reduction of critical current (40%) compared to the undeformed sample and the highest sensitivity to thermal stress (I-c/I-c0 = 0.5). The V-I characteristic curves were also fitted by a potential curve displaying n-exponents varying from 20 down to 10 between the initial and last thermal shock cycle.

Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 by the polymeric precursor method were investigated. These films showed excellent ferroelectric properties in terms of large remnant polarization (2P(r)) of 47.6 mu C/cm(2) and (2E(c)) of 55 kV/cm, fatigue-free characteristics up to 10(10) switching cycles, and a current density of 0.7 mu A/cm(2) at 10 kV/cm. X-ray diffraction and scanning electron microscope investigations indicate that the deposited films exhibit a dense, well-crystallized microstructure having random orientations and with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the platelike grains of the BLT films, which make the domain walls easier to be switched under external field.

Ferroelectric characteristics of BiFeO3 thin films prepared via a simple chemical solution deposition

BiFeO3 (BFO) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. The capacitance dependence on voltage is strongly nonlinear, confirming the ferroelectric properties of the films resulting from the domain switching. The leakage current density increases with annealing temperature. The polarization electric field curves could be obtained in BFO films annealed at 500 degrees C, free of secondary phases. X-ray photoelectron spectroscopy spectra of films annealed at 500 degrees C indicated that the oxidation state of Fe was purely 3+, demonstrating that our films possess stable chemical configurations. (c) 2007 American Institute of Physics.

New approach to four-phase transmission systems: analysis of the transient response and the possible voltage surges

This study describes a technical analysis of a four-phase line as a transmission system alternative. An analysis in the frequency and the time domains is performed to evaluate the electrical characteristics and the transient response of a generic four-phase system compared with those of a conventional three-phase transmission system. The technical features of this non-conventional system are discussed and reviewed based on the current literature. Thus, a new analysis of the four-phase system is presented that emphasises several technical characteristics that have not been discussed in previous studies.

A low-voltage triode-MOSFET four-quadrant multiplier with optimized current-efficiency

A low-voltage, low-power four-quadrant analog multiplier with optimized current-efficiency is presented. Its core corresponds to a pseudodifferential cascode, gain-boosting triode-transconductor. According to a low-voltage 1.2μm CMOS n-well process, operand differential-amplitudes are 1.0Vpp and 0.32Vpp for a 1.3V-supply. Common-mode voltages are properly chosen to maximize current-efficiency to 58%. Total quiescent dissipation is 260μW. A range of PSPICE simulation supports theoretical analysis. Excellent linearity is observed on dc characteristic. Assuming a ±0.5% mismatch on (W/L) and VTH THD at full-scale is 0.93% and 1.42%, for output frequencies of 1MHz and 10MHz, respectively.

A low-voltage programmable-gain current-mode amplifier

A CMOS low-voltage, wide-band continuous-time current amplifier is presented. Based on an open-loop topology, the circuit is composed by transresistance and transconductance stages built around triode-operating transistors. In addition to an extended dynamic range, the amplifier gain can be programmed within good accuracy by the rapport between the aspect-ratio of such transistors and tuning biases Vxand Vy. A balanced current-amplifier according to a single I. IV-supply and a 0.35μm fabrication process is designed. Simulated results from PSPiCE and Bsm3v3 models indicate a programmable gain within the range 20-34dB and a minimum break-frequency of IMHz @CL=IpF. For a 200 μApp-level, THD is 0.8% and 0.9% at IKHz and 100KHz, respectively. Input noise is 405pA√Hz @20dB-gain, which gives a SNR of 66dB @1MHz-bandwidth. Maximum quiescent power consumption is 56μ W. © 2002 IEEE.

The use of current transformers for noise detection due to sparking in insulators strings in high voltage transmission lines

In a general way, in an electric power utility the current transformers (CT) are used to measurement and protection of transmission lines (TL) 1 The Power Line Carriers systems (PLC) are used for communication between electrical substations and transmission line protection. However, with the increasing use of optical fiber to communication (due mainly to its high data transmission rate and low signal-noise relation) this application loses potentiality. Therefore, other functions must be defined to equipments that are still in using, one of them is detecting faults (short-circuits) and transmission lines insulator strings damages 2. The purpose of this paper is to verify the possibility of using the path to the ground offered by the CTs instead of capacitive couplings / capacitive potential transformers to detect damaged insulators, since the current transformers are always present in all transmission lines (TL's) bays. To this a comparison between this new proposal and the PLC previous proposed system 2 is shown, evaluating the economical and technical points of view. ©2010 IEEE.