Molecular cloning and expression pattern of 14 kDa apolipoprotein in orange-spotted grouper, Epinephelus coioides

A novel fish-specific apolipoprotein (apo-14 kDa) has been recently cloned from eel and pufferfish. However, its expression pattern has not been elucidated. in this study, EcApo-14 has been screened from hypothalamic cDNA library of male orange-spotted grouper, which shows 62.9%, 51%, 46.9%, 43.2%, and 31.9% identities to Apo-14 of European flounder, pufferfish, Japanese eel, gibel carp, and grass carp, respectively. RT-PCR analysis reveals that this gene is first transcribed in neurula embryos and maintains a relatively stable expression level during the following embryogenesis. EcApo-14 transcripts are at a very high level during embryonic and early larval development in the yolk syncytial layer (YSL), and decrease in YSL and form intense staining in liver at 3 days after hatching. In adult tissues, EcApo-14 is predominantly expressed in liver and brain. The data suggested that EcApo-14 might play an important role in liver and brain morphogenesis and growth. (c) 2005 Elsevier Inc. All rights reserved.

Three different viruses observed from the tissues of diseased mandarin fish Siniperca chuatsi

Three different kinds of viruses, the spherical virus SCSV with a diameter of about 280 nm, the rhabdovirus SCRV with a size about 250 x 120 nm, and the baculovirus SCBV with a size about 200 x 100 nm, were observed from the tissues of diseased mandarin fish Siniperca chuatsi with outbreak of infection and acute lethality. This phenomenon implicated that the reason why the epizootic disease of mandarin fish could not be quenched by only one kind of virus vaccine can be explained by the fact that the fish may be infected by different kinds of viruses. Therefore, more attention should be paid to the complexity of virus pathogens in the prevention strategy for mandarin fish diseases.

Effects of silver carp density on zooplankton and water quality: Implications for eutrophic lakes in China

We examined the responses of zooplankton community, water transparency, chlorophyll a and nutrients to manipulation of density of silver carp (Hypophthyalmichthys molitrix) in an one-way factorial experiment using enclosures placed in Donghu (East Lake, 30 degrees 33' N, 114 degrees 23' E), located in Wuhan, P. R. China. Enclosures (18.75 m(3)) were treated with four silver carp densities, 0, 81, 225, 485 g/m(2). Total zooplankton abundance (excluding nauplii and rotifers except for Asplanchna sp.) and the mean size of dominant cladoceran species were significantly greater in enclosures with 0 and 81 fish densities than those in enclosures with 225 and 485 fish densities. Water transparency also improved significantly when silver carp densities were 0 or 81 g/m(2). We did not find significant effects of silver carp density on chlorophyll a, total phosphorus, or total nitrogen concentrations. We conclude that by reducing planktivorous fish to below the current density (190 g/m(2)), the zooplankton community can be shifted from the dominance of small-bodied Moina sp. to dominance of large-bodied Daphnia sp. Further, the water clarity can be increased.

Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 mum. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer.

New way to enhance the uniformity of self-organized InAs quantum dots

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.

Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb

The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.

Preparation and luminescence properties of Eu2+ in SiO2 xerogels

Al-doped and B, Al co-doped SiO2 xerogels with Eu2+ ions were prepared only by sol-gel reaction in air without reducing heat-treatment or post-doping. The luminescence characteristics and mechanism of europium doping SiO2 xerogels were studied as a function of the concentration of Al, B, the europium concentration and the host composition. The emission spectra of the Al-doped and B, Al codoped samples all show an efficient emission broad band in the blue violet range. The blue emission of the Al-doped sample was centered at 437 nm, whereas the B, Al co-doped xerogel emission maximum shifted to 423 nm and the intensity became weaker. Concentration quenching effect occurred in both the Al-doped and B, Al co-doped samples, which probably is the result of the transfer of the excitation energy from Eu2+ ions to defects. The highest Eu2+ emission intensity was observed for samples with the Si(OC2H5)(4):C2H5OH:H2O molar ratio of 1:2:4. (c) 2006 Elsevier B.V. All rights reserved.

施氮量对黄土旱塬区冬小麦产量和土壤水分动态的影响

为了探明施氮量对黄土旱塬区冬小麦(Triticum aestivum L.)籽粒产量和麦田土壤水分动态的影响规律,以抗旱性冬小麦品种长武58为供试材料,于2006～2008年连续两个年度在陕西省长武县对不同施氮量条件下麦田土壤贮水量动态、耗水规律、小麦产量和夏闲期降水补给率等特征进行研究。结果表明,麦田土壤贮水量随季节和降水明显变化,同一生育时期2.7m土层的土壤贮水量基本随施氮量的增加而减少。偏旱年每公顷施氮300kg和平水年每公顷施氮225kg均能够获得当年最大的籽粒产量和水分利用效率。每公顷施氮75kg和225kg均能在夏闲期获得较大的降水补给率。每公顷施氮225kg更有利于黄土旱塬区冬小麦的高产和稳产。

MBE Growth of High Electron Mobility InP Epilayers

The molecular beam epitaxial growth of high quality epilayers on （100） InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/（V · s） and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.

注氮剂量对SIMON材料性能影响的研究

采用氧氮共注的方法制备了氮氧共注隔离 SOI (SIMON) 圆片,对制备的样品进行了二次离 子质谱和透射电镜分析,并对埋层结构与抗辐射性能的机理进行了分析.结果表明,注氮剂量较低 时埋层质量较好.机理分析结果表明,圆片的抗辐照性能与埋层质量之间存在很密切的关系,埋层 的绝缘性能是影响器件抗辐射效应的关键因素.

New way to enhance the uniformity of self-organized InAs quantum dots

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.