扬子地块西南缘铅锌矿床Cd、Ge与Ga富集规律初步研究

扬子地块西南缘分布着大量富含Cd、Ge与Ga的铅锌矿床，已成为我国Pb、Zn及Cd、Ge与Ga矿产资源的重要生产基地。对代表性铅锌矿床进行野外地质调查和系统采样鉴定后．应用电子探针微区分析手段，研究主要矿石矿物闪锌矿、方铅矿和黄铁矿中分散元素的富集特征。结果显示．各类矿床中闪锌矿均相对富集Cd，方铅矿富集Ge与Ga，而黄铁矿中Cd、Ge与Ga的富集系数均相对较低．未呈现出选择性富集的趋势；赋存于震旦纪一寒武纪地层且以脉状、网脉状产出的矿体中闪锌矿的Cd含量明显高于赋存于晚古生代并以层状产出的矿体中闪锌矿的Cd含量。

Interprétation de l’intradermoréaction tuberculinique chez la personne âgée

info:eu-repo/semantics/published

1960-1980. Het gouden tijdperk van de openbare werken. 1960-1980. L'âge d'or des travaux public

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Low temperature surface nitridation processes for dielectric-Ge interfaces

Germanium MOS capacitors have been fabricated with a high-? HfO dielectric using ALD. An in-situ low temperature (250°C) nitrogen plasma treatment on the germanium surface prior to the deposition of HfO was found to be beneficial to the electrical properties of the devices. Germanium MOS capacitors have also been fabricated with a SiO dielectric deposited by an atmospheric pressure CVD 'silox' process. The same low temperature plasma nitridation was found to degrade the electrical properties of the silox devices. The effect of a post-metal anneal in H and N on both types of capacitor structure was also found to degrade device electrical properties. copyright The Electrochemical Society.