Flow physics of a normal-hole bled supersonic turbulent boundary layer

An experimental study on normal hole bleed in a supersonic turbulent boundary layer has been conducted. A combination of LDV, Schlieren imagery and oil flow visualization were used to provide a better understanding of the three-dimensional flow field surrounding a supersonic bleed array. Experiments were performed at Mach numbers of 1.8 and 2.5, while previously published results at Mach numbers of 1.3 and 1.5 were also incorporated. The bleed system was capable of removing up to approximately 10% of the incoming boundary layer through a tunnel-spanning array of discrete holes with diameters the same order of magnitude of boundary layer displacement thickness. Inspection of boundary layer profiles downstream of the bleed region indicates that vorticity generated by the discrete holes can have a substantial influence on changes to the boundary layer shape factor and skin friction coefficient, through modification of the lower 20% of the boundary layer. This vorticity was visualized through oil-flow visualization, and LDV measurements, showing the development of two vortices off each bleed hole, and corresponding upwash and downwash regions with far-reaching three dimensional effects. © 2013 by J. M. Oorebeek and H. Babinsky.

Canonical normal shock wave/boundary-layer interaction flows relevant to external compression inlets

The normal shock wave/boundary-layer interaction is important to the operation and performance of a supersonic inlet, and the normal shock wave/boundary-layer interaction is particularly prominent in external compression inlets. To improve understanding of such interactions, it is helpful to make use of fundamental flows that capture the main elements of inlets, without resorting to the level of complexity and system integration associated with full-geometry inlets. In this paper, several fundamental flowfield configurations have been considered as possible test cases to represent the normal shock wave/boundary-layer interaction aspects found in typical external compression inlets, and it was found that the spillage diffuser more closely retains the basic flow features of an external compression inlet than the other configurations. In particular, this flowfield allows the normal shock Mach number as well as the amount and rate of subsonic diffusion to all be held approximately constant and independent of the application of flow control. In addition, a survey of several external compression inlets was conducted to quantify the flow and geometric parameters of the spillage diffuser relevant to actual inlets. The results indicated that such a flow may be especially relevant if the terminal Mach number is about 1.3 to 1.4, the confinement parameter is around 10%, and the width is around twice or three times the height. In addition, the area expansion downstream of the shock should be limited to the conservative side of incipient stall based on incompressible diffusers. Copyright © 2013 by the authors.

Joint experimental and numerical approach to three-dimensional shock control bump research

Previous studies of transonic shock control bumps have often been either numerical or experimental. Comparisons between the two have been hampered by the limitations of either approach. The present work aims to bridge the gap between computational fluid dynamics and experiment by planning a joint approach from the outset. This enables high-quality validation data to be produced and ensures that the conclusions of either aspect of the study are directly relevant to the application. Experiments conducted with bumps mounted on the floor of a blowdown tunnel were modified to include an additional postshock adverse pressure gradient through the use of a diffuser as well as introducing boundary-layer suction ahead of the test section to enable the in-flow boundary layer to be manipulated. This has the advantage of being an inexpensive and highly repeatable method. Computations were performed on a standard airfoil model, with the flight conditions as free parameters. The experimental and computational setups were then tuned to produce baseline conditions that agree well, enabling confidence that the experimental conclusions are relevant. The methods are then applied to two different shock control bumps: a smoothly contoured bump, representative of previous studies, and a novel extended geometry featuring a continuously widening tail, which spans the wind-tunnel width at the rear of the bump. Comparison between the computational and experimental results for the contour bump showed good agreement both with respect to the flow structures and quantitative analysis of the boundary-layer parameters. It was seen that combining the experimental and numerical data could provide valuable insight into the flow physics, which would not generally be possible for a one-sided approach. The experiments and computational fluid dynamics were also seen to agree well for the extended bump geometry, providing evidence that, even though thebumpinteracts directly with the wind-tunnel walls, it was still possible to observe the key flow physics. The joint approach is thus suitable even for wider bump geometries. Copyright © 2013 by S. P. Colliss, H. Babinsky, K. Nubler, and T. Lutz. Published by the American Institute of Aeronautics and Astronautics, Inc.

Control of normal shock wave / turbulent boundary-layer interaction using streamwise slots

The effect of streamwise slots on the interaction of a normal shock wave / turbulent boundary layer has been investigated experimentally at a Mach number of 1.3. The surface pressure distribution for the controlled interaction was found to be significantly smeared, featuring a distinct plateau. This was due to a change in shock structure from a typical unseparated normal shock wave boundary layer interaction to a large bifurcated Lambda type shock pattern. Boundary layer velocity measurements downstream of the slots revealed a strong spanwise variation of boundary layer properties whereas the modified shock structure was relatively twodimensional. Oil flow visualisation indicated that in the presence of slots the boundary layer surface flow was highly three dimensional and confirmed that the effect of slots was mainly due to suction and blowing similar to that for passive control with uniform surface ventilation. Three hole probe measurements confirmed that the boundary layer was three dimensional and that the slots introduced vortical motion into the flowfield. Results indicate that when applied to an aerofoil, the control device has the potential to reduce wave drag while incurring only small viscous penalties. The introduction of streamwise vorticity may also be beneficial to delay trailing edge separation and the device is thought to be capable of postponing buffet onset. © 2001 by A N Smith.

Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure

By integrating a resonant tunneling diode with a 1.2 mu m-thick slightly doped n-type GaAs layer in a three-barrier, two-well resonant tunneling structure, the resonant tunneling of photo-excited holes exhibits a value of peak-to-valley current ratio (PVCR) as high as 36. A vast number of photo-excited holes generated in this 1.2 mu m-thick slightly doped n-type GaAs layer, and the quantization of hole levels in a 23nm-thick quantum well on the outgoing side of hole tunneling out off the resonant tunneling diode which greatly depressed the valley current of the holes, are thought to be responsible for such greatly enhanced PVCR.

Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AlN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2D one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition

A new alternative method to grow the relaxed Ge0.24Si0.76 layer with a reduced dislocation density by ultrahigh vacuum chemical vapor deposition is reported in this paper. A 1000-Angstrom Ge0.24Si0.76 layer was first grown on a Si(100) substrate. Then a 500-Angstrom Si layer and a subsequent 5000-Angstrom Ge0.24Si0.76 overlayer followed. All these three layers were grown at 600 degrees C. After being removed from the growth system to air, the sample was first annealed at 850 degrees C for 30 min, and then was investigated by cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy. It is shown that the 5000-Angstrom Ge0.24Si0.76 thick over layer is perfect, and most of the threading dislocations are located in the embedded thin Si layer and the lower 1000-Angstrom Ge0.24Si0.76 layer. The relaxation ratio of the over layer is deduced to be 0.8 from Raman spectroscopy.

Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth

When liquid phase epitaxy regrowth at 780 degrees C for 2 h is applied to the samples after molecular beam epitaxy, a decrease of the threshold current density in strained InGaAs/GaAs quantum well lasers by a factor of 3 to 4 is obtained. We suggest that this improvement is attributed to the reduction of nonradiative centers associated with deep levels at the three regions of the active region, the graded layer and the cladding layer. Indeed, a significant reduction of deep center densities has been observed by using minority and majority carrier injection deep level transient spectroscopy measurements. (C) 1998 Elsevier Science B.V. All rights reserved.

Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer

A transmission electron microscopy study of triple-ribbon contrast features in a ZnTe layer grown epitaxially on a vicinal GaAs (001) substrate is reported. The ribbons go through the layer as threading dislocations near the [<(11)over bar 2>](111) or [112](<(11)over bar 1>) directions. Each of these (with a 40 nm width) has two narrow parts enclosed by three partial dislocations (with a 20 nm spacing). By contrast analysis and contrast simulation, the ribbons have been shown to be composed of two partially overlapping stacking faults. Their origin is attributed to a forced reaction between two crossing perfect misfit dislocations.

Effect of reflectivity at the interface of oxide layer on transverse mode control in oxide confined vertical-cavity surface-emitting lasers

The transverse mode control in oxide confined vertical-cavity surface-emitting lasers is discussed by modeling the dielectric aperture as a uniform waveguide and an extra reflectivity at the oxide layer. The phase of the extra reflectivity and the refractive index step can be adjusted to change the mode threshold gain. We calculate the lateral refractive index step from the mode wavelength difference between aperture and perimeter modes, and compare it with that obtained from the weighted average index. The mode reflectivity in terms of the lateral optical confinement factor at the oxide layer is considered in calculating the threshold gain for transverse modes. The numerical results show that higher transverse modes can be suppressed by adjusting the position of a thin AlAs-oxide layer inside a three-quarter-wave layer in the distributed Bragg reflector. (C) 1998 American Institute of Physics. [S0021-8979(98)04007-9].

The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells

Tandem amorphous silicon solar cells have attracted extensive interest because of better performance than single junction counterpart. As n/p junctions play an important role in the current transportation of tandem solar cells, it is important to design and fabricate good n/p junctions.The properties of the n/p junction of amorphous silicon (a-Si) were studied. We investigate the effect of interposing a nanocrystalline p(+) layer between n (top cell) and p (bottom cell) layers of a tandem solar cell. The crystalline volume fraction, the band gap, the conductivity and the grain size of the nanocrystalline silicon (nc-Si) p(+) layer could be modulated by changing the deposition parameters.Current transport in a-Si based n/p ("tunnel") junctions was investigated by current-voltage measurements. The voltage dependence on the resistance (V/J) of the tandem cells was examined to see if n/p junction was ohmic contact. To study the affection of different doping concentration to the properties of the nc-Si p(+) layers which varied the properties of the tunnel junctions, three nc-Si p(+) film samples were grown, measured and analyzed.