Influence of the interaction potential on simulated sputtering and reflection data

The TRIM.SP program which is based on the binary collision approximation was changed to handle not only repulsive interaction potentials, but also potentials with an attractive part. Sputtering yields, average depth and reflection coefficients calculated with four different potentials are compared. Three purely repulsive potentials (Meliere, Kr-C and ZBL) are used and an ab initio pair potential, which is especially calculated for silicon bombardment by silicon. The general trends in the calculated results are similar for all potentials applied, but differences between the repulsive potentials and the ab initio potential occur for the reflection coefficients and the sputtering yield at large angles of incidence.

Movimientos Sociales, matrices socio-políticos y nuevos escenarios en América Latina

Seit einigen Jahren erfährt Lateinamerika einen epochalen Umbruch. Das neoliberale Modell ist in einer Krise. Die Politik des „Washington Consensus“ und das Diktum einer politisch nicht kontrollierbaren Globalisierung werden zunehmend hinterfagt. Aus der Linkswende haben sich neue alternative Politikkonzepten entwickelt. In dem vorliegenden Working Paper wird auf die Beziehung von sozialen Bewegungen, Ideologien und Regierungen eingegangen. In ihrer Diagnose arbeitet Maristella Svampa die ambivalenten Charakteristiken des aktuellen Wandels in Lateinamerika heraus. Daran schließt eine analytische Annäherung an die verschiedenen ideologischen Traditionen an, die den Widerstandssektor prägen. Abschließend werden bei der Analyse der vier wichtigsten Tendenzen einige der wichtigsten Daten über die Region präsentiert. Zu diesen Tendenzen gehören der Fortschritt der indigenen Kämpfe, die Konsolidierung neuer Formen des Kampfes, die Reaktivierung der national-populären Tradition, sowie die Rückkehr des „Desarrollismo“. Letztere wird sowohl von progressiven als auch eher konservativ-neoliberalen Regierungen unterstützt.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

Guía para la construcción de matrices insumo-producto y de contabilidad social en Colombia

Las matrices insumo-producto y de contabilidad social constituyen fuentes de información importante para el entendimiento de las relaciones productivas y económicas de un país en un determinado momento del tiempo. En Colombia, la construcción de estos instrumentos tiene una larga experiencia aunque poca ha sido su documentación. Este artículo pretende exponer de manera clara y concisa el procedimiento necesario para su construcción.

Use of video mark schemes to facilitate student generated feedback and reflection

Presentation

Sustaining Success Task: Week 3 Introduction to reflection

An introduction to a method of reflection. This task looks at the process of writing a short piece of reflection and provides a framework for that activity

Sustaining Success Task 4: Reflection and Action - basic

A reflection exercise to help you understand the reflection process better

Sustaining Success Week 4 Task: Reflection and Action - elaborate

link to the documents which describe the personal reflection task. One of the tasks you may choose to submit

Self-medication and related terms: a conceptual reflection

Introduction: self-medication has become a growing practice in the world population. This phenomenon has been promoted as a form of self-care, with a positive impact on reducing spending in health systems, however there is concern about the potential negative effects related to inadequate diagnosis and treatment, which can affect health of individuals. This dual perception of the phenomenon is partly related to a variety of terms and concepts used, that make difficult its theoretical and empirical approach. Harmonization of the definitions involved is required in order to make adequate epidemiological comparisons. Objectives: analyze the concept of self medication and related terms from the definitions in the literature of the subject. Conclusions: in the last four decades it has been an evolution of both the wording and the definitions related to self-medication, from a very simple concept that implies the absence of prescription, to more complex ones that encompass very diverse behaviors, even those mediated by an act of prescription but not followed or not completed by the patient. Additionally the conceptual proliferation seen, justify the ordering of the terms related to self-medication. This paper presents a proposal for classification in four groups: a. self-medication, b. self care, c. pharmaceutical preparations and medicines, and d. prescription. This proposal should facilitate the exploration and analysis of the phenomenon and allow future theoretical approaches.

Al – Qaeda and the international politics: a teorical Reflection

Through the study of the relationship between non-state actors and states, is pretended to analyze the role of Al-Qaeda in international politics. It is argued that Al-Qaeda tries or has the ability to promote or accelerate changes in the power  structure, where stands the American hegemony and the pursuit of balance by  various actors, implementing asymmetric strategies as counter-hegemonic responses.

Las matrices, la base 2 y la tecnología digital.

Mediante dos juegos de adivinación de números en unas tablas, se estudia cómo la base 2 y las matrices son fundamentales en la tecnología digital. Además se aporta la implementación en el programa informático Mathematica del algoritmo que permite realizar esta acción. En el artículo se muestra paso a paso cómo realizar estos juegos.

De la escuela infantil a la escuela primaria : ¿continuidad o ruptura en las matrices interactivas de la enseñanza y el aprendizaje?

Resumen tomado de la revista

Caracterización del conocimiento matemático para la enseñanza (MKT) de matrices en Bachillerato.

Resumen basado en el de la publicación

El test de matrices progresivas de Raven : manual de aplicación y baremación española en preescolar y EGB.

Trabajo que recoge los resultados tras la aplicación del test de Raven en diferentes grupos de EGB para conocer de manera objetiva la realidad de los alumnos españoles de este nivel educativo. Todo ello va precedido por unas normas simplificadas de aplicación, acompañadas de las que dió el autor del test, y un estudio sintético y práctico de las variadas y diversas potencialidades del mismo encaminadas al conocimiento exhaustivo del examinando, así como diversas observaciones prácticas del autor..

Grafos e matrices. 'Gráficas y matrices'.

Resumen basado en el de la publicación