955 resultados para Nd-doped high silica glass


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We have fabricated a neodymium-doped phosphate glass fiber with a silica cladding and used it to form a fiber laser. Phosphate and silicate glasses have considerably different glass transition temperatures and softening points making it hard to draw a fiber from these two glasses. A bulk phosphate glass of composition (Nd2O3)(0.011)(La2O3)(0.259)(P2O5)(0.725)(Al2O3)(0.005) was prepared and the resultant material was transparent, free from bubbles and visibly homogeneous. The bulk phosphate glass was drawn to a fiber while being jacketed with silica and the resultant structure was of good optical quality, free from air bubbles and major defects. The attenuation at a wavelength of 1.06 mu m was 0.05 dB/cm and the refractive index of the core and cladding at the pump wavelength of 488 nm was 1.56 and 1.46, respectively. The fibers were mechanically strong enough to allow for ease of handling and could be spliced to conventional silica fiber. The fibers were used to demonstrate lasing at the F-4(3/2) - I-4(11/2) (1.06 mu m) transition. Our work demonstrates the potential to form silica clad optical fibers with phosphate cores doped with very high levels of rare-earth ions (27-mol % rare-earth oxide).

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A custom-designed inductively coupled plasma (ICP)-assisted radio-frequency magnetron sputtering deposition system has been employed to synthesize aluminium-doped zinc oxide (ZnO:Al) nanofilms on glass substrates at room temperature. The effects of film thickness and ZnO target (partially covered by Al chips) power on the structural, electrical and optical properties of the ZnO:Al nanofilms are studied. A high growth rate (∼41 nm/min), low electrical sheet resistance (as low as 30 Ω/□) and high optical transparency (>80%) over the visible spectrum has been achieved at a film thickness of ∼615 nm and ZnO target power of 150 W. The synthesis of ZnO:Al nanofilms at room temperature and with high growth rates is attributed to the unique features of the ICP-assisted radio-frequency magnetron sputtering deposition approach. The results are relevant to the development of photovoltaic thin-film solar cells and flat panel displays.

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Silica segregation at two grain junctions or in amorphous triple junction pockets can influence creep by altering the grain-boundary diffusion coefficient. Although the addition of silica to superplastic yttria-stabilized tetragonal zirconia enhances ductility, differences in reported creep parameters have limited critical identification of rate controlling mechanisms. The present study on a pure 3 mol% yttria-stabilized tetragonal zirconia (3YTZ) and 3YTZ with 0.39 or 3.9 wt% silica involved a detailed characterization of creep over a wide range of experimental conditions and also tracer diffusion measurements. The data broadly show transitions in creep stress exponents from n∼1 to ∼2 to ∼3 with a decrease in the stress. The data at high stresses are consistent with Coble diffusion creep, and creep at lower stresses is attributed to interface-controlled diffusion creep. Measurements indicated that silica does not have any significant influence on grain boundary or lattice diffusion, and this is consistent with the observation that 3YTZ and 3YTZ with 0.39% or 3.9% silica exhibit essentially identical creep behavior in the Coble creep regime. Silica influences the interface control process so that the transitions in stress exponents are pushed to lower stresses with an increase in silica content.

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Lead-Carbon hybrid ultracapacitors (Pb-C HUCs) with flooded, absorbent-glass-mat (AGM) and silica-gel sulphuric acid electrolyte configurations are developed and performance tested. Pb-C HUCs comprise substrate-integrated PbO2 (SI-PbO2) as positive electrodes and high surface-area carbon with graphite-sheet substrate as negative electrodes. The electrode and silica-gel electrolyte materials are characterized by XRD, XPS, SEM, TEM, Rheometry, BET surface area, and FTIR spectroscopy in conjunction with electrochemistry. Electrochemical performance of SI-PbO2 and carbon electrodes is studied using cyclic voltammetry with constant-current charge and discharge techniques by assembling symmetric electrical-double-layer capacitors and hybrid Pb-C HUCs with a dynamic Pb(porous)/PbSO4 reference electrode. The specific capacitance values for 2 V Pb-C HUCs are found to be 166 F/g, 102 F/g and 152 F/g with a faradaic efficiency of 98%, 92% and 88% for flooded, AGM and gel configurations, respectively.

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We demonstrate passive Q-switching of short-length double-clad Tm3+-doped silica fiber lasers near 2 mu m pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr2+:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 mu] and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at similar to 10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed. (c) 2008 Elsevier B.V. All rights reserved.

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In this paper, we present the broadband optical amplification in bismuth-doped germanate glass, at the second telecommunication window when excited with 808 nm and 980 nm laser diodes, respectively. The amplification range is from 1272 nm to 1348 nm wavelength, which is within the O-band of silica fiber communication. This bismuth-doped glass can be used as ultra broadband amplification material for wavelength-division-multiplexing (WDM) at the second telecommunication window.

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We report on space-selective co-precipitation of silver and gold nanoparticles in Ag+, Au3+ co-doped silicate glasses by irradiation of femtosecond laser pulses and subsequent annealing at high temperatures. The color of the irradiated area in the glass sample changed from yellow to red with the increase of the annealing temperature. The effects of average laser power and annealing temperature on precipitation of the nanoparticles were investigated. A reasonable mechanism was proposed to explain the observed phenomena. (c) 2006 Elsevier Ltd. All rights reserved.

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We report on transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics with broadband infrared luminescence. Ni2+-doped MgO-Al2O3-SiO2 glass is Prepared by using the conventional method. After heat treatment at high temperature, MgAl2O4 crystallites are precipitated, and their average size is about 4.3nm. No luminescence is detected in the as-prepared glass sample, while broadband infrared luminescence centred at around 1315nm with full width at half maximum (FWHM) of about 300nm is observed from the glass ceramics. The observed infrared emission could be attributed to the T-3(2g)(F-3) -> (3)A(2g)(F-3) transition of octahedral Ni2+ ions in the MgAl2O4 crystallites of the transparent glass ceramics. The product of the fluorescence lifetime and the stimulated emission cross section is about 1.6 X 10(-24) s cm(2).

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Nd:silicate glass was implanted at room temperature by 6.0 MeV C3+ ions with a dose of 2.0 x 10(15) ions cm(-2). A waveguide with thickness of about 6.3 mu m was formed. The prism-coupling method was used to observe the dark modes of the waveguide at 633 nm and 1539 nm, respectively. There are three dark modes at 633 nm, of which one is the enhanced-index mode. The propagation loss of the enhanced-index mode in the waveguide measured at 633 nm is 0.42 dB cm(-1) after annealing at 217 degrees C for 35 min. The reflectivity calculation method was applied to simulate the refractive index profiles in the waveguide. The mode optical near-field output at 633 nm was presented.

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We report a novel phenomenon in GeS2-In2S3-CsI chalcohalide glass doped with Tm3+ ions. Under irradiation with an 808 nm laser diode, a bright red emission centered at 700 nm is observed for the first time in this glass. The log-log correlation between integrated emission intensity and pump power reveals that a two-photon absorption process is involved in the phenomenon, suggesting that the F-3(3,2) -> H-3(6) transition of Tm3+ ions is responsible for the appearance of the red emission. The results indicate that the indium (In) based chalcohalide glass containing Tm3+ ions is expected to find applications in visible lasers, high density optical storage and three-dimensional color displays. (C) 2009 Elsevier B.V. All rights reserved.

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High-quality neodymium doped GGG laser crystals have been grown by Czochralski (Cz) method. Results of Nd:GGG thin chip laser operating at 1.064 μm pumped by Ti:sapphire laser operating at 808 nm were reported. The slop efficiency was as high as 20%.

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Transparent 1 at% Nd3+:Y1.9La0.1O3 ceramics were fabricated with nanopowders prepared by carbonate coprecipitation method. The powder compacts were sintered in H-2 atmosphere at 1550 degrees C for 30 h. The Nd3+:Y1.9La0.1O3 ceramics display uniform grains of about 50 mu m and high transparency. The highest transmittance of the ceramics reaches 67%. The strongest absorption peak is in the wavelength of 820 nm with absorption cross section of 2.48 x 10(-20) cm(2). The absorption is still high at LD wavelength 806 nm with absorption cross section of 1.78 x 10(-20) cm(2) and broad full width at half maximum (FWHM) of about 6.3 nm. The strongest emission peak was centered at 1078 nm with large stimulated emission cross section of 9.63 x 10(-20) cm(2) and broad FWHM of about 7.8 nm. The broad absorption and emission bandwidth of Nd3+:y(1.9)La(0.1)O(3) transparent ceramics are favorable to achieve the miniaturized LD pumping apparatus and ultrashort modelocked pulse laser output, respectively. (c) 2007 Elsevier B.V. All rights reserved.

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Advanced waveguide lasers, operating both in continuous wave and pulsed regimes, have been realized in an active phosphate glass by direct writing with femtosecond laser pulses. Stable single mode operation was obtained; the laser provided more than 50 m W in single longitudinal and transverse mode operation with 21% slope efficiency. Furthermore, by combining a high gain waveguide and an innovated fiber-pigtailed saturable absorber based on carbon nanotubes, a mode-locked ring laser providing transform limited 1.6 ps pulses was demonstrated. © 2007 IEEE.

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Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.

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Spherical Ru(bpy)(3)(2+)-doped silica (RuSi) nanoparticles were prepared via a water-in-oil microemulsion approach. The electrochemical and electrochemiluminescent properties of the RuSi nanoparticles immobilized on an indium tin oxide (ITO) electrode were investigated. Further, electrochemiluminescence (ECL) of the RuSi nanoparticles with covalently coated biomacromolecules was studied. By covalent cross-linking with glutaraldehyde, gamma-(aminopropyl) triethoxysilane (APTES)-pretreated RuSi nanoparticles were coupled with different concentrations of bovine serum albumin (BSA), hemoglobin, and myoglobin, respectively.