High-density holographic recording parameters under different wavelength of a two dyes-sensitized photopolymer

The high-density holographic recording parameters of a novel two dyes-sensitized photopolymer under different exposure wavelengths are studied. The results show that the maximum diffraction efficiency, exposure sensitivity, maximum refraction index modulation, dynamic range, and the exposure time constant increases with the increase of the exposure wavelength. The analysis indicates that the scattering has an important role in the forming of the holographic grating. (c) 2005 Elsevier GmbH. All rights reserved.

A wideband sensitive holographic photopolymer

A novel wideband sensitive dry holographic photopolymer sensitized by rose bengal (RB) and methylene blue (MB) is fabricated, the holographic storage characteristics of which are investigated under different exposure wavelengths. The result shows that the sensitive spectral band exceeds 200 nm in visible light range, the maximum diffraction efficiency under different exposure wavelengths is more than 40% and decreases with the decrease of exposure wavelength, the exposure sensitivity is not change with the exposure wavelength. This photopolymer is appropriate for wavelength multiplexing or multi-wavelength recording in digital holographic storage.

A new photopolymerizable holographic recording material based on acrylamide and N-hydroxymethyl acrylamide

A new polyvinylalcohol-based photopolymeric holographic recording material has been developed. The recording is obtained by the copolymerization of acrylamide and N-hydroxymethyl acrylamide. Diffraction efficiencies near 50% are obtained with energetic exposure of 80mJ/cm(2). N-hydroxymethyl acrylamide can improve the optical quality of the film. With the increase of the concentration of N-hydroxymethyl acrylamide, the flatness of the film increases, scattering reduces and the straight image is clearer with a small distortion. The postexposure effect on the grating is also studied. The diffraction efficiency of grating increases further during postexposure, gradient of monomer exists after exposure.

A humidity-resistant highly sensitive holographic photopolymerizable dry film

A new humidity-resistant highly sensitive acrylamide-based photopolymeric holographic recording material has been developed. The photopolymer is resistant to the humidity of environment. Diffraction efficiencies near 50% are obtained with exposure energy of 60 mJ/cm(2) in materials of 150 mu m. thickness. Diphenyl iodonium chloride is added to the material and can increase the exposure sensitivity by a factor of more than 4 (to about 28 mJ/cm(2)). An image has been successfully stored in the material with a small distortion. (C) 2005 Elsevier B.V. All rights reserved.

Spectroscopic properties of Yb:YAP crystal

The 10at% Yb-YAP crystal has been grown by the Czochralski method. The absorption and emission spectra and fluorescence lifetime of Yb:YAP crystal at room temperature were studied. There is a strong absorption band centered at 959 nm and the absorption cross-section of 1.51 × 10^-20 cm². The emission cross-section at 1040 nm is 0.6 × 10^-20 cm² and the fluorescence lifetime is about 1.2 ms. The effects of O₂-annealing on the spectral properties were studied. The spectroscopic properties strongly depended on the axis direction and b axis was the best direction for laser output. The spectrum parameters of Yb:YAP and Yb:YAG crystal were compared.}

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.