A radio frequency field guide using field induced adiabatic potential

We study the behaviour of atoms in a field with both static magnetic field and radio frequency (rf) magnetic field. We calculate the adiabatic potential of atoms numerically beyond the usually rotating wave approximation, and it is pointed that there is a great difference between using these two methods. We find the preconditions when RWA is valid. In the extreme of static field almost parallel to rf field, we reach an analytic formula. Finally, we apply this method to Rb-87 and propose a guide based on an rf field on atom chip.

IREE: Automated Vision Tracking of Project Related Entities

The purpose of this supplemental project was to collect invaluable data from the large-scale construction sites of Egnatia Odos motorway needed to validate a novel automated vision-tracking method created under the parent grant. For this purpose, one US graduate and three US undergraduate students traveled to Greece for 4 months and worked together with 2 Greek graduate students of the local faculty collaborator. This team of students monitored project activities and scheduled data collection trips on a daily basis, setup a mobile video data collection lab on the back of a truck, and drove to various sites every day to collect hundreds of hours of video from multiple cameras on a large variety of activities ranging from soil excavation to bridge construction. The US students were underrepresented students from minority groups who had never visited a foreign country. As a result, this trip was a major life experience to them. They learned how to live in a non-English speaking country, communicate with Greek students, workers and engineers. They lead a project in a very unfamiliar environment, troubleshoot myriad problems that hampered their progress daily and, above all, how to collaborate effectively and efficiently with other cultures. They returned to the US more mature, with improved leadership and problem-solving skills and a wider perspective of their profession.

Predictive control of a Boeing 747 aircraft using an FPGA

New embedded predictive control applications call for more eficient ways of solving quadratic programs (QPs) in order to meet demanding real-time, power and cost requirements. A single precision QP-on-a-chip controller is proposed, implemented in afield-programmable gate array (FPGA) with an iterative linear solver at its core. A novel offline scaling procedure is introduced to aid the convergence of the reduced precision solver. The feasibility of the proposed approach is demonstrated with a real-time hardware-in-the-loop (HIL) experimental setup where an ML605 FPGA board controls a nonlinear model of a Boeing 747 aircraft running on a desktop PC through an Ethernet link. Simulations show that the quality of the closed-loop control and accuracy of individual solutions is competitive with a conventional double precision controller solving linear systems using a Riccati recursion. © 2012 IFAC.

Characterization and fabrication of zinc oxide nanowire devices

In this paper, we demonstrate an approach for the local synthesis of ZnO nanowires (ZnO NWs) and the potential for such structures to be incorporated into device applications. Three network ZnO NW devices are fabricated on a chip by using a bottom-up synthesis approach. Microheaters (defined by standard semiconductor processing) are used to synthesize the ZnO NWs under a zinc nitrate (Zn(NO3)2·6H2O) and hexamethylenetetramine (HMTA, (CH2)6·N4) solution. By controlling synthesis parameters, varying densities of networked ZnO NWs are locally synthesized on the chip. The fabricated networked ZnO NW devices are then characterized using UV excitation and cyclic voltammetry (CV) experiments to measure their photoresponse and electrochemical properties. The experimental results show that the techniques and material systems presented here have the potential to address interesting device applications using fabrication methods that are fully compatible with standard semiconductor processing. © 2013 IEEE.

Predictive control using an FPGA with application to aircraft control

Alternative and more efficient computational methods can extend the applicability of model predictive control (MPC) to systems with tight real-time requirements. This paper presents a system-on-a-chip MPC system, implemented on a field-programmable gate array (FPGA), consisting of a sparse structure-exploiting primal dual interior point (PDIP) quadratic program (QP) solver for MPC reference tracking and a fast gradient QP solver for steady-state target calculation. A parallel reduced precision iterative solver is used to accelerate the solution of the set of linear equations forming the computational bottleneck of the PDIP algorithm. A numerical study of the effect of reducing the number of iterations highlights the effectiveness of the approach. The system is demonstrated with an FPGA-in-the-loop testbench controlling a nonlinear simulation of a large airliner. This paper considers many more manipulated inputs than any previous FPGA-based MPC implementation to date, yet the implementation comfortably fits into a midrange FPGA, and the controller compares well in terms of solution quality and latency to state-of-the-art QP solvers running on a standard PC. © 1993-2012 IEEE.

Nanoscale light-matter interactions in atomic cladding waveguides.

Alkali vapours, such as rubidium, are being used extensively in several important fields of research such as slow and stored light nonlinear optics quantum computation, atomic clocks and magnetometers. Recently, there is a growing effort towards miniaturizing traditional centimetre-size vapour cells. Owing to the significant reduction in device dimensions, light-matter interactions are greatly enhanced, enabling new functionalities due to the low power threshold needed for nonlinear interactions. Here, taking advantage of the mature platform of silicon photonics, we construct an efficient and flexible platform for tailored light-vapour interactions on a chip. Specifically, we demonstrate light-matter interactions in an atomic cladding waveguide, consisting of a silicon nitride nano-waveguide core with a rubidium vapour cladding. We observe the efficient interaction of the electromagnetic guided mode with the rubidium cladding and show that due to the high confinement of the optical mode, the rubidium absorption saturates at powers in the nanowatt regime.

Two-photon absorption in an atomic cladding wave guide

We experimentally demonstrate two-photon Doppler free interactions on a chip-scale platform consisting of a silicon nitride waveguide integrated with rubidium vapor cladding. We obtain absorption lines having widths of 300 MHz, using low power levels. © OSA 2013.

Two-photon absorption in an atomic cladding wave guide

We experimentally demonstrate two-photon Doppler free interactions on a chip-scale platform consisting of a silicon nitride waveguide integrated with rubidium vapor cladding. We obtain absorption lines having widths of 300 MHz, using low power levels. © OSA 2013.

Light-matter interactions in atomic cladding wave guides

We experimentally demonstrate light-matter interactions on a chip, consisting of a silicon nitride wave-guide integrated with rubidium vapor cladding. The measured absorption spectra provide indications for low light nonlinear interactions. © 2012 OSA.

Light-matter interactions in atomic cladding wave guides

We experimentally demonstrate light-matter interactions on a chip, consisting of a silicon nitride wave-guide integrated with rubidium vapor cladding. The measured absorption spectra provide indications for low light nonlinear interactions. © OSA 2012.

Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method

E2SiO5 thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O film. X-ray diffraction measurement revealed that Er2SiO5 crystalline structure was formed as sample treated at 1100 degrees C for 1 h in O-2 atmosphere. Through proper thermal treatment, the 1.53 mu m Er3+-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 degrees C. Analysis of pump-power dependence of Er3+ PL intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10(21) (photons/cm(2)/sec). Temperature-dependent photoluminescence (PL) of Er2SiO5 was studied and showed a weak thermal quenching factor of 2. Highly efficienct photoluminescence of Er2SiO5 films has been demonstrated with Er3+ concentration of 10(22)/cm(3), and it opens a promising way towards future Si-based light source for Si photonics. (C) 2009 Elsevier B.V. All rights reserved.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

Design,Fabrication,and Testing of Single-Side Alignment of 16×0.8nm Arrayed-Waveguide Grating

A novel design of 100GHz-spaced 16channel arrayed-waveguide grating (AWG) based on silica-on-silicon chip is reported.AWG is achieved by adding a Y-branch to the AWG and arranging the input/output channel in a neat row,so the whole configuration can be aligned and packaged using only one fiber-array.This configuration can decrease the device's size,enlarge the minimum radius of curvature,save time on polishing and alignment,and reduce the chip's fabrication cost.

基于安全芯片的防伪数码相机

为了改进现有防伪数码相机不能处理通过翻拍伪造数码照片的缺陷,提出了一种新的基于安全芯片的防伪数码相机架构。在拍摄时将所拍摄的区域分成多个小单元,并用对焦测距系统测量各个单元到相机的距离。用安全芯片对图像元数据、图像内容及距离信息进行数字签名,并将签名内容及距离信息都保存在图像文件的元数据里。通过验证数字签名有效且距离信息不完全相等来保证图片的真实可信。该防伪数码相机能同时发现照片在拍摄后被篡改和翻拍问题,所拍摄照片真实可信。