The effects of electric field on the electronic structure of a semiconductor quantum dot

The effect of electric field on the electronic structure of a spherical quantum dot is studied in the framework of the effective-mass envelope-function theory. The dependence of the energy of electron states and hole states on the applied electric field and on the quantum dot size is investigated; the mixing of heavy holes and light holes is taken into account. The selection rule for the optical transition between the conduction band and valence band states is obtained. The exciton binding energies are calculated as functions of the quantum dot radius and the strength of the electric field. (C) 1998 American Institute of Physics.

Electronic structures of GaAs/AlAs lateral superlattices

The electronic energy subbands and minigaps in lateral superlattices (LSLs) have been calculated by the plane-wave expansion method. The effect of the lateral modulation on the critical well width at which an indirect-direct (X-Gamma) optical transition occurs in the LSLs is investigated. Our theoretical results are in agreement with the available experimental data. Totally at variance with the previous variation calculational results, the minigaps between the first two subbands in LSLs, as functions of the modulation period, exhibit a maximum value at a specific length and disappear on decreasing the modulation period further. The modulations of several types of lateral potential are also evaluated; the indication is that the out-of-phase modulation on either side of the wells is the strongest while the in-phase modulation is the weakest. Our calculations also show that the effect of the difference between the effective masses of the electrons in the different materials on the subband structures is significant.

Electronic, structural, and optical properties of crystalline yttria

The electronic structure of crystalline Y2O3 is investigated by first-principles calculations within the local-density approximation (LDA) of the density-functional theory. Results are presented for the band structure, the total density of states (DOS), the atom-and orbital-resolved partial DOS. effective charges, bond order, and charge-density distributions. Partial covalent character in the Y-O bonding is shown, and the nonequivalency of the two Y sites is demonstrated. The calculated electronic structure is compared with a variety of available experimental data. The total energy of the crystal is calculated as a function of crystal volume. A bulk modulus B of 183 Gpa and a pressure coefficient B' of 4.01 are obtained, which are in good agreement with compression data. An LDA band gap of 4.54 eV at Gamma is obtained which increases with pressure at a rate of dE(g)/dP = 0.012 eV/Gpa at the equilibrium volume. Also investigated are the optical properties of Y2O3 up to a photon energy of 20 eV. The calculated complex dielectric function and electron-energy-loss function are in good agreement with experimental data. A static dielectric constant of epsilon(O)= 3.20 is obtained. It is also found that the bottom of the conduction band consists of a single band, and direct optical transition at Gamma between the top of the valence band and the bottom of the conduction band may be symmetry forbidden.

Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3143025]

THEORY OF THE ELECTRONIC-STRUCTURE OF POROUS SI

A theoretical model for the electronic structure of porous Si is presented. Three geometries of porous Si (wire with square cross section, pore with square cross section, and pore with circular cross section) along both the [001] and [110] directions are considered. It is found that the confinement geometry affects decisively the ordering of conduction-band states. Due to the quantum confinement effect, there is a mixing between the bulk X and GAMMA states, resulting in finite optical transition matrix elements, but smaller than the usual direct transition matrix elements by a factor of 10(-3). We found that the strengths of optical transitions are sensitive to the geometry of the structure. For (001) porous Si the structure with circular pores has much stronger optical transitions compared to the other two structures and it may play an important role in the observed luminescence. For this structure the energy difference between the direct and the indirect conduction-band minima is very small. Thus it is possible to observe photoluminescence from the indirect minimum at room temperature. For (110) porous Si of similar size of cross section the energy gap is smaller than that of (001) porous Si. The optical transitions for all three structures of (110) porous Si tend to be much stronger along the axis than perpendicular to the axis.

ELECTRONIC-STRUCTURES OF QUANTUM WIRES FORMED BY LATERAL STRAIN

The electronic structures of quantum wires formed by lateral strain are studied in the framework of the effective-mass envelope-function method. The hole energy levels, wave functions, and optical transition matrix elements are calculated for the real quantum-wire structure, and the results are compared with experiment. It is found that one-dimensional confinement effects exist for both electronic and hole states related to the n (001) = 1 state. The lateral strained confinement causes luminescence-peak redshifts and polarization anisotropy, and the anisotropy is more noticeable than that in the unstrained case. The variation of hole energy levels with well widths in the [110] and [001] directions and wave vector along the [110BAR] direction are also obtained.

Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs

We have measured low-temperature photoluminescence (PL) and optical absorption spectra of an In0.2Ga0.8As/GaAs multiple quantum well (MQW) structure at pressures up to 8 GPa. Below 4.9 GPa, PL shows only the emission of the n = 1 heavy-hole (HH) exciton. Three new X-related PL bands appear at higher pressures. They are assigned to spatially indirect (type-II) and direct (type-I) transitions from X(Z) states in GaAs and X(XY) valleys of InGaAs, respectively, to the HH subband of the wells. From the PL data we obtain a valence band offset of 80 meV for the strained In0.2Ga0.8As/GaAs MQW system. Absorption spectra show three features corresponding to direct exciton transitions in the quantum wells. In the pressure range of 4.5 to 5.5 GPa an additional pronounced feature is apparent in absorption, which is attributed to the pseudo-direct transition between a HH subband and the folded X(Z) states of the wells. This gives the first clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance at the heterointerfaces in MQWs.

Electronic structures of the zinc-blende GaN/Ga1-xAlxN compressively strained superlattices and quantum wells

The electronic structures of the zinc-blende GaN/Ga0.85Al0.15N compressively strained superlattices and quantum wells are investigated using a 6 x 6 Hamiltonian model (including the heavy hole, light hole and spin-orbit splitting band). The energy bands, wavefunctions and optical transition matrix elements are calculated. It is found that the light hole couples with the spin-orbit splitting state even at the k=0 point, resulting in the hybrid states. The heavy hole remains a pure heavy hole state at k=0. The optical transitions from the hybrid valence states to the conduction states are determined by the transitions of the light hole and spin-orbit splitting states to the conduction states. The transitions from the heavy hole, light hole and spin-orbit splitting states to the conduction states obey the selection rule Delta n=0. The band structures obtained in this work will be valuable in designing GaN/GaAlN based optoelectronic devices. (C) 1996 Academic Press Limited

Optical study of electronic states in GaAsN

GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

Effects of the transition dipole moment function on the dynamics of ozone photodissociation: an exact 3D quantum mechanical study

The effects of the transition dipole moment function (TDMF) on the dynamics Of O-3 photodissociation in the Hartley band have been exploited by means of exact 3D time-dependent wavepacket method using the SW potential energy surface [J. Chem. Phys. 78 (1983) 7191]. The calculations show that the explicit inclusion of the TDMF results in slight uniform reductions for the intensities of recurrence peaks of the autocorrelation function and a slight broadening of the absorption spectrum, in comparison with the result where the TDMF is assumed to be constant. The pattern of recurrence structures of the autocorrelation function is essentially unaffected. (C) 2001 Elsevier Science B.V. All rights reserved.

Theoretical studies on electronic structures, spectra and charge transporting properties of a series of Pt((CN)-N-Lambda)(2) complexes

We report a quantum-chemical study of electronic, optical and charge transporting properties of four platinum (II) complexes, pt((CN)-N-Lambda)(2) ((CN)-N-Lambda=phenylpyridine or thiophenepyridine). The lowest-lying absorptions at 442, 440, 447 and 429 nm are all attributed to the mixed transition characters of metal-to-ligand charge transfer (MLCT) and ligand-centered (LC) pi - pi(*) transition. While, unexpectedly, the lowest-lying phosphorescent emissions at 663, 660, 675 and 742 nm are mainly from metal-to-ligand charge transfer ((MLCT)-M-3) ligand-centered (LC) pi ->pi* transition. Ionization potential (IP), electron affinities (EA) and reorganization energy P (lambda(hole/electron)) were obtained to evaluate the charge transfer and balance properties between hole and electron.

Ab initio study on the electronic and mechanical properties of ReB and ReC

The structural, electronic, and mechanical properties of ReB and ReC have been studied by use of the density functional theory. For each compound, six structures are considered, i.e., hexagonal WC, NiAs, wurtzite, cubic NaCl, CsCl, and zinc-blende type structures. The results indicate that for ReB and ReC, WC type structure is energetically the most stable among the considered structures, followed by NiAs type structure. ReB-WC (i.e., ReB in WC type structure) and ReB-NiAs are both thermodynamically and mechanically stable. ReC-WC and ReC-NiAs are mechanically stable and becomes thermodynamically stable above 35 and 55 GPa, respectively. The estimated hardness from shear modulus is 34 GPa for ReB-WC, 28GPa for ReB-NiAs, 35GPa for ReC-WC and 37GPa for ReC-NiAs, indicating that they are potential candidates to be ultra-incompressible and hard materials.

Chemical Bonding and Electronic Structure of 4d-Metal Monosulfides

Bond distances, vibrational frequencies, dissociation energies, electron affinities, ionization potentials and dipole moments of the title molecules in neutral and charged ions were studied by use of density functional method. Ground states for each molecule were assigned. The calculated bond distance decreases with the increasing of atomic number of 4d metals, reaches minimum at RhS, then increases. For cationic molecules, the calculated bond distance decreases to the minimum at MoS+, then increases. The calculated vibrational frequency decreases from YS(YS+) to PdS(PdS+) for both neutral and cationic molecules. The bond ionic character decreases from YS(YS+) to PdS(PdS+) for neutral and cationic molecules. The bonding patterns are discussed and compared with the available studies.

Oligoaniline-Functionalized terpyridine ligands and their ruthenium(II) complexes: synthesis, spectroscopic property and redox behaviors

A series of oligoaniline-functionalized mono- and bis-topic terpyridine ligands, i.e. C6H5[N(R)C6H4](n)TPY (R = H, butyl, tert-butyloxycarbonyl; n = 1-4; TPY = 2,2':6',2"-terpyridyl) and TPYC6H4[N(R)C6H4](m)TPY (R = H, tert-butyloxycarbonyl; m = 2, 4), and the corresponding monoand bis-nuclear ruthenium(II) complexes have been synthesized and verified. The spectroscopic results indicate that two kinds of pi-pi* transitions from TPY and oligoaniline fragments of ligands strongly shift to lower energy, and the metal-to-ligand charge-transfer transition ((MLCT)-M-1) bands of all obtained complexes are considerably red-shifted (Delta lambda(max) = 22-64 nm) and their intensities become much more intense (approximately 4-6 times), compared with those of the reported complex [Ru(TPY)(2)](2+). Moreover, the spectroscopic properties of the ligands and complexes with longer oligoaniline units (n = 3, 4) are markedly influenced by the external stimulus, such as the oxidation and proton acid doping.

Electronic structures and chemical bonding in diatomic ScX to ZnX (X = S, Se, Te)

Bond distances, vibrational frequencies, electron affinities, ionization potentials, dissociation energies, and dipole moments of the title molecules in neutral, positively, and negatively charged ions were studied using density functional method. Ground electronic state was assigned for each molecule. The bonding patterns were analyzed and compared with both the available data and across the series. It was found that, besides ionic component, covalent bonds are formed between the metal s, d orbitals, and the p orbital of S, Se, and Te. For neutral and cationic molecules, the covalent character increases from ScX to CrX and from FeX to CuX with an exception of decrease at MnX and ZnX, while for anionic molecules, the trend is not obvious. For both neutral and charged molecules, the sulfides have the shortest bond distance and largest vibrational frequency, while tellurides have the largest bond distance and smallest vibrational frequency. For neutral and anionic molecules, the dissociation energy of sulfides is the largest, that of tellurides is the smallest, while this only remains true for cationic molecules from ScX+ to FeX+.