A Brief Grammar of Euskara, the Basque Language

This is a short grammar of the Basque language, or Euskara as it is called by its speakers. What follows is a partial description of the syntax of Euskara. The text has been arranged in the following fashion: there is an index where you can find the distribution of topics. Within each of the topics, an effort has been made to arrange information from general to specific, so that as you read into a given section, you will get into more details about the topic being under discussion. This grammar hopes to be useful to a wide variety of users. Therefore, it will probably not satisfy anyone completely: Those who want a quick 'feel' for the language will be disappointed by the slow and messy details the text dives into. Those who want a detailed, professional description will be disappointed by the lack of depth in the discussion. The text hopes to sit somewhere in the middle, and if it tells too much to those who want to know a little, and too little to those who want to know a lot, then it will have done its job.

Low-noise THz Niobium SIS Mixers

This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits.

To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency.

A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/k_b to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.

I. Reactively sputtered Ti-Si-N thin films for diffusion barrier applications. II. Oxidation, diffusion and crystallization of an amorphous Zr_(60)Al_(15)Ni_(25) alloy.

Films of Ti-Si-N obtained by reactively sputtering a TiSi_2, a Ti_5Si_3, or a Ti_3Si target are either amorphous or nanocrystalline in structure. The atomic density of some films exceeds 10^23 at./cm^3. The room-temperature resistivity of the films increases with the Si and the N content. A thermal treatment in vacuum at 700 °C for 1 hour decreases the resistivity of the Ti-rich films deposited from the Ti_5Si_3 or the Ti_3Si target, but increases that of the Si-rich films deposited from the TiSi_2 target when the nitrogen content exceeds about 30 at. %.

Ti_(34)Si_(23)N_(43) deposited from the Ti_5Si_3 target is an excellent diffusion barrier between Si and Cu. This film is a mixture of nanocrystalline TiN and amorphous SiN_x. Resistivity measurement from 80 K to 1073 K reveals that this film is electrically semiconductor-like as-deposited, and that it becomes metal-like after an hour annealing at 1000 °C in vacuum. A film of about 100 nm thick, with a resistivity of 660 µΩcm, maintains the stability of Si n+p shallow junction diodes with a 400 nm Cu overlayer up to 850 °C upon 30 min vacuum annealing. When used between Si and Al, the maximum temperature of stability is 550 °C for 30 min. This film can be etched in a CF_4/O_2 plasma.

The amorphous ternary metallic alloy Zr_(60)Al_(15)Ni_(25) was oxidized in dry oxygen in the temperature range 310 °C to 410 °C. Rutherford backscattering and cross-sectional transmission electron microscopy studies suggest that during this treatment an amorphous layer of zirconium-aluminum-oxide is formed at the surface. Nickel is depleted from the oxide and enriched in the amorphous alloy below the oxide/alloy interface. The oxide layer thickness grows parabolically with the annealing duration, with a transport constant of 2.8x10^(-5) m^2/s x exp(-1.7 eV/kT). The oxidation rate is most likely controlled by the Ni diffusion in the amorphous alloy.

At later stages of the oxidation process, precipitates of nanocrystalline ZrO_2 appear in the oxide near the interface. Finally, two intermetallic phases nucleate and grow simultaneously in the alloy, one at the interface and one within the alloy.

钛宝石强激光负载的有机硅复合凝胶增透膜研究

以硅酸四乙酯(TEOS)和甲基三乙氧基硅烷(MTEOS)为前驱材料，用溶胶-凝胶(sol-gel)方法在钛宝石表面制备得到均匀性良好且具有高激光损伤阈值的有机硅复合凝胶增透膜。膜层在钛宝石激光器输出波段(750～850nm)的增透效果显著，其平均透过率超过98．6％；激光破坏阈值为2．2J／cm^2(800nm，300ps)；膜层表面均匀性达到激光波面的要求，在皮秒、飞秒超短脉冲高功率激光领域具有应用价值。溶胶的性能测试结果表明，溶胶粘度和成膜折射率均随溶液中CH3SiO1.5溶胶体含量的增加而增大，而膜

Modified porous silica antireflective coatings with laser damage resistance for Ti:sapphire

Porous SiO2 antireflective (AR) coatings are prepared from the colloidal silica solution modified with methyltriethoxysilane (MTES) based on the sol-gel route. The viscosity of modified silica suspensions changes but their stability keeps when MTES is introduced. The refractive indices of modified coatings vary little after bake treatment from 100 to 150 Celsius. The modified silica coatings on Ti:sapphire crystal, owning good homogeneity, display prominent antireflective effect within the laser output waveband (750-850 nm) of Ti:sapphire lasers, with average transmission above 98.6%, and own laser induced damage thresholds (LIDTs) of more than 2.2 J/cm2 at 800 nm with the pulse duration of 300 ps.

溶胶-凝胶多孔二氧化硅减反膜稳定性研究

多孔SiO2膜层经热处理后，具有很高的激光破坏阈值，但是结构中有许多Si-OH亲水基团，导致光学透过率受环境相对湿度的影响很大。实验目的是改善膜层内部结构，使膜层结构中的亲水基团转变为疏水基团。提高膜层的疏水性，增强膜层的透过率稳定性。系统地研究了膜层透过率随时间变化的规律，在氨气和六甲基二硅氮烷(HMDS)混合气氛下热处理膜层，处理后生成Si-O-Si(CH2)3非极性疏水基团，使膜层的疏水性大大提高，因而膜层的透过率稳定性有大幅度提高。稳定性的提高延长了膜层的寿命。处理后膜层的表面粗糙度良好，均方根表

A influência da espécie exótica invasora Artocarpus heterophyllus (jaqueira) sobre a comunidade de anuros de serrapilheira em uma área de Mata Atlântica no Sudeste do Brasil

O processo de introdução de espécies é reconhecido como a segunda causa mais importante de erosão da diversidade biológica em muitos ambientes no Brasil e no mundo. As espécies invasoras possuem não apenas o poder de sobrevivência e adaptação em outros ambientes, mas a capacidade de dominar a diversidade biológica nativa através da alteração das características básicas dos processos ecológicos naturais e das interações. A jaqueira, Artocarpus heterophyllus Lamarck (Moraceae), tem sua origem nas florestas tropicais da Índia, tendo sido introduzida no Brasil ainda no período Colonial e atualmente é invasora em áreas de Mata Atlântica. Este estudo fornece os primeiros dados sobre a influência da espécie exótica invasora Artocarpus heterophyllus sobre comunidades de anuros de folhiço. As amostragens foram realizadas em uma área de Mata Atlântica, no litoral sudoeste do estado do Rio de Janeiro, incluindo informações sobre riqueza de espécies, densidades específicas e parâmetros ambientais. Nosso estudo foi realizado no Parque Estadual da Ilha Grande entre janeiro de 2009 e março de 2011. Para amostrar a comunidade de anuros de folhiço usamos 154 parcelas de 5 x 5 m, sendo 77 delas em áreas com jaqueiras e 77 em áreas sem jaqueiras, totalizando 3.850 m de chão de floresta amostrados. Nós amostramos um total de 613 anuros habitando o chão da floresta, pertencentes a dez espécies: Brachycephalus didactylus; Chiasmocleis sp.; Haddadus binotatus; Ischnocnema guentheri; Ischnocnema octavioi; Ischnocnema parva; Leptodactylus marmoratus; Physalaemus signifer; Rhinnela ornata e Zachaenus parvulus. Seis das dez espécies foram comuns às áreas com e sem jaqueiras, sendo a similaridade entre as duas áreas de 60%. As áreas com jaqueiras tiveram o dobro (N = 18) de parcelas sem nenhum anfíbio. O número de anfíbios registrados nas parcelas com jaqueiras (38%) foi menor do que o encontrado nas áreas sem jaqueiras (62%). O anfíbio predominante no folhiço em ambas às condições foi Ischnocnema parva, tendo abundancia maior nas parcelas sem jaqueiras. A densidade total de anuros vivendo no chão da floresta nas áreas com jaqueiras (12,2 ind/100 m) foi menor que nas áreas sem jaqueiras (19,7 ind/100 m). Entre os parâmetros ambientais analisados os que possuíram maior influência sobre a abundância de anfíbios foram a profundidade do folhiço e o pH do solo. Os dados sugerem que a jaqueira, além de ocupar o habitat de espécies nativas, é capaz de promover alterações na estrutura desses habitats que irão intervir na fauna do local.

用VTE方法在蓝宝石衬底上生长γ-LiAlO2薄膜

利用气相传输平衡技术(VTE)和后退火处理工艺在(0001)蓝宝石衬底上获得了高度[100]取向的γ-LiAlO2薄膜．X射线衍射表明是由单相的γ-LiAlO2所组成,此薄膜经850～900℃／120h空气中退火处理后显示出高度的[100]取向,这一实验结果意味着有望通过VTE方法制备用于GaN基器件外延生长的γ-LiAlO2(100)-Al2O3(0001)复合衬底.

Study on the hydrolytic property and thermal stability of LiAlO2 substrate

The hydrolytic property and thermal stability of LiAlO2 (LAO), important factors for its application, were examined by AFM and X-ray rocking curve. We found that H2O may be deleterious for LAO surface polishing when the root mean square (RMS) value is less than 1 nm. However, when the RMS value is more than 1 nm it may be useful for LAO polishing. (100)-plane LAO substrates are annealed in the range of 850-900 degrees C in flux N-2, Slick AlN layer probably is produced on the substrate surface. M-plane GaN layer has grown on the substrate by metal-organic chemical vapor deposition (MOCVD) method. Theses results show that LiAlO2 crystal is a promising substrate of fabricating high-efficiency LEDs by MOCVD. (c) 2006 Elsevier B.V. All rights reserved.

Nd3+掺杂的氧化镧钇透明激光陶瓷的光谱性能研究

Nd3+-doped Y2-2x La-2x O-3 (x = 0.08) transparent ceramics were fabricated by conventional fabrication process. Spectroscopic properties of the samples were investigated. The absorption band of Nd3+ : Y1.84La0.16O3 was broad covering the wavelength range 780-850 nm. When doped with 1.5at% Nd3+, the cross sections of the sample at 820 nm and laser diode pumped 808 nm were 1.81 x 10(-20) cm(2) and 1.54 x 10(-20) cm(2), respectively. The strongest emission peak of the sample was centered at 1078 mn with long fluorescent lifetime, broad emission bandwidth and high quantum efficiency. Because of the additive La2O3, the spectroscopic quality parameter (X-Nd) of matrix was' decreased from 1.6 to 0.46, thus the fluorescence branch ratio of F-4(3/2) - (4) I-11/2 transition was increased to 56.82%. These properties of Nd3' : Y1.84La0.16O3 transparent ceramic are benefitial to achieve high efficient laser output and ultrashort modelocked pulse.

Spectroscopic properties of Ce : YAP scintillation crystal grown by temperature gradient technique

Spectroscopic properties of Ce-doped yttrium orthoaluminate (Ce:YAlO3 or Ce:YAP) crystals grown by temperature gradient technique (TGT) were investigated, and the effects of the growth conditions on the properties were analyzed.. Methods of optical absorption (OA), photoluminescence (PL), photoluminescence decay (PLD), X-ray excited luminescence (XL) and cathodeluminescence (CL) were used in these investigations. The results showed that the absorption band peak at 202, 394 and 532 nm originated from F and F+ color center induced by the weak reducing growth atmosphere, green emission band near 500 ran derived from Ce3+ -Ce3+ pairs and band at 650 similar to 850 run from some unintentional impurity in crystals.

飞秒脉冲激光器中色散补偿膜的设计

阐述了用光学薄膜进行色散补偿的基本原理，介绍了设计的基本过程．根据Ti：Sapphire飞秒激光器中腔内色散补偿的要求，设定了色散补偿目标，通过计算机优化，得到了一种40层的Ta2O5／SiO2介质膜系．该膜系能在720～870am范围获得大于99．5％的反射率，在510～550nm获得大于90％的透射率，在740～850nm提供较平滑的-40fs^2的群延迟色散．这样的结果经过7次反射后，可以补偿5-mm Ti：sapphire晶体产生的绝大部分群延迟色散。

Mausitxa gaztandegia

Gradu amaierako lan hau, Mausitxa gaztandegiari egindako aholkularitza lan bat da. Euskeraz egina dago.

高州水库库岸水间带护岸林模式研究

项目应用“生物体与环境条件相适应、适者生存”的原理，采用“自然环境下反复考验、示范小区测定和模拟试验三结合”，通过调查、测试、形态解剖和生理分析等研究，历经10年多时间，发现榕属中有一种能忍耐长时间洪涝和干旱的有别于细叶榕的湖榕可能是生态型变种。利用湖榕和水翁两耐涝树种混交配种铺地黍草种营造护岸林模式，已成功地在高州水库汛期防限水位85±0.5米高程范围四个示范点水间带营造了共长2公里，宽5～10米的护岸林带。项目设计制作的“闭空油桶钢结构浮架”设备，可调节试验材料入水的深度，解决了在库面现场进行树种耐涝指标定量测试的难题。