Upconversion luminescence in Yb3+-doped yttrium aluminum garnets

In this paper, we present results on upconversion luminescence performed on Yb3+-doped yttrium aluminum garnets under 940 nm excitation. The upconversion luminescence was ascribed to Yb3+ cooperative luminescence and the presence of rare earth impurity ions. The cooperative luminescence spectra as a function of Yb concentration were measured and the emission intensity variation with Yb concentration was discussed. Yb3+ energy migration quenched the cooperative luminescence of Yb:YAG crystals with doping level over 15 at%. (c) 2004 Elsevier B.V. All rights reserved.

Yb：YAG晶体的红外闪烁特性

用脉冲电子束激发测量了不同Yb^3+掺杂浓度的Yb：YAG晶体的红外(IR)闪烁发光性能。Yb：YAG晶体的IR闪烁发光具有高的光产额和长的衰减时间，但存在浓度猝灭效应和温度依赖关系。Yb：YAG晶体的IR闪烁性能还与晶体品质有关，相同掺杂浓度的Yb：YAG晶体，品质优异的会获得更高的光产额。这一初步的研究成果表明，部分掺Yb^3+晶体有可能用于医学成像装置。

Yb掺杂的YAlO<3/sub>单晶体的温梯法生长和光谱性能

The dark-brown colored 5 at% Yb-doped YAlO3 (Yb:YAP) single crystal was grown successfully by temperature gradient technique (TGT) for the first time. The TGT-grown Yb:YAP crystal with the perovskite structure and excellent crystallization perfection were confirmed by the X-ray diffractions techniques. The dark-brown color of TGT-Yb:YAP crystal turned into the colorless after annealing in the air at 1200 degrees C for 10h. The absorption spectra, LD-excited infrared emission and X-ray excited luminescence spectra of the air-annealed Yb:YAP single crystal were investigated at the room temperature. The results indicate that the TGT-Yb:YAP single crystals can be used for the laser and scintillation applications. (c) 2005 Elsevier B.V. All rights reserved.

Growth and spectroscopic characteristics of Yb : GSO single crystal

For the first time, a high optical quality 10 at.% Yb3+-doped gadolinium oxyorthosilicate laser crystal Gd2SiO5 (GSO) was grown by the Czochralski (Cz) method. The segregation coefficient of Yb3+ was studied by the inductively coupled plasma atomic emission spectrometer (ICP-AES) method. The crystal structure has monoclinic symmetry with space group P2(1)/c; this was determined by means of an x-ray diffraction analysis. The absorption spectra, fluorescence spectra and fluorescence decay curves of Yb3+ ions in a GSO crystal at room temperature were also studied. Then, the spectroscopic parameters of Yb:GSO were calculated. The advantages of the Yb:GSO crystal include high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections and particularly broad emission bandwidth (similar to 72 nm). The results indicated that the Yb:GSO crystal seemed to be a very promising laser gain medium in diode-pumped femtosecond laser and tunable solid state laser applications when LD pumped at 940 and 980 nm.

LD抽运Yb:GSO实现1090nm低阈值激光运转

We report what we believe to be the first demonstration of laser operation with a novel laser material of Yb3(+) -doped Gd-2 SiO2 (Yb: GSO) pumped by a laser diode at 940 nm. We obtained a low lasing threshold of 1.27 kW/cm(2) with the center wavelength of 1090 nm, which is lower than the value of 1.53 kW/cm(2) predicted for Yb: YAG. The maximal output power of 360 mW was obtained with a 2% output, which corresponds to a slope efficiency up to 19%.

Characterization of diode-pumped laser operation of a novel Yb : GSO crystal

We report what is believed to be the first demonstration of the laser action of Yb3+ -doped Gd2SiO5 (Yb:GSO) crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm(2), which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm(2)). The laser wavelength is 1090 mn. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5 W. By using the SESAM, the Q-switched mode locking and CW mode-locked operations are demonstrated.

Color centers and charge state recharge in gamma-irradiated Yb : YAP

Gamma-ray irradiation induced color centers and charge state recharge of impurity and doped ion in 10 at.% Yb:YAP have been studied. The change in the additional absorption (AA) spectra is mainly related to the charge exchange of the impurity Fe2+, Fe3+ and Yb3+ ions. Two impurity color center bands at 255 and 313 nm were attributed to Fe3+ and Fe2+ ions, respectively. The broad AA band centered at 385 nm may be associated with the cation vacancies and F-type center. The transition Yb3+ -> Yb2+ takes place in the process of gamma-irradiation. Oxygen annealing and gamma-ray irradiation lead to an opposite effect on the absorption properties of the Yb:YAP crystal. In the air annealing process, the transition Fe2+ -> Fe3+ and Yb2+ -> Yb3+ take place and the color centers responsible for the 385 nm band was destroyed. (c) 2005 Elsevier B.V. All rights reserved.

Cooperative and charge transfer luminescence in Yb3+ -doped yttrium aluminum perovskite (YAlO3)

YAlO3 (YAP) crystals with different Yb3+ concentration have been grown by Czochralski method and cooperative fluorescence of Yb3+ ions in YAP crystal was studied under 940-nm infrared (IR) LD excitation at room temperature. The Yb concentration dependence of absorption intensity of IR and charge transfer bands exhibit different features. The green emission band in the region of 480-520nm was assigned to the cooperative deexcitation of two Yb3+ ions. The remaining upconverted emission bands containing various sharp peaks associated with impurity ions were observed and discussed. Charge transfer luminescence of heavily doped 20at% Yb:YAP is strongly temperature dependent and no concentration quenching of the charge transfer luminescence was found through the investigation of different Yb levels samples. (c) 2006 Elsevier B.V. All rights reserved.

Yb：FAP晶体的生长及光谱性能

应用中频感应提拉法生长出不同掺杂浓度的Yb：FAP激光晶体，运用电感耦合等离子体原子发射光谱仪（ICP-AES）测定了Yb^3＋离子存Yb：FAP晶体中的分凝系数约为0．03。随着晶体的生长，晶体中Yb^3＋离子的轴向浓度逐渐增大。研究Yb：FAP晶体在77K和300K温度下的吸收光谱发现，振动谱的变化主要是由电子-声子近共振耦合作用引起的。系统地研究了不同Yb^3＋离子掺杂浓度Yb：FAP晶体的吸收光谱和荧光光谱。通过吸收光谱的测量计算了晶体的吸收截面。Yb：FAP晶体在904nm和982nm处存在Yb

Yb：YAG晶体的闪烁特性

通过不同Yb^3＋掺杂浓度（5％-30％，原子数分数）的Yb：YAG晶体的阴极射线发光谱、衰减时间、光输出及其温度依赖关系的测量，研究了Yb：YAG晶体的闪烁性能。不同Yh^3＋掺杂浓度的Yb：YAG晶体具有不同的光输出和猝灭温度，光输出随Yb^3＋掺杂浓度的增大而降低，猝灭温度则随掺杂浓度的增大而升高。室温下Yb：YAG晶体的发光衰减时间较短，均小于50ns。Yb^3＋掺杂浓度为5％的Yb：YAG晶体具有较高的光输出和较低的猝灭温度。

掺Yb^3＋的氧化镧钇透明激光陶瓷的光谱特性

采用传统陶瓷烧结工艺，在无压还原气氛中低温制备了Yb^3＋掺杂量高达10％（按摩尔计）的透明性良好的氧化镧钇激光陶瓷，研究了其在室温的吸收光谱、发射光谱以及荧光寿命。结果表明：掺Yb^3＋氧化镧钇透明激光陶瓷具有宽的吸收和发射光谱以及长的荧光寿命。吸收峰位于902，942nm和968nm处，吸收截面分别为0.31×10^-20,0.45×10^-20cm^2和0.53×10^-20cm2：主发射峰位于1032nm和1075nm处，发射截面分别为1.05×10^-20cm^2和0.87×10^-20cm ^

激光二极管抽运Na，Yb共掺CaF2晶体自调Q激光特性的研究

利用激光二极管（LD）抽运新型Na．Yb共掺CaF2（Na．Yb：CaF2）晶体，获得了1．05μm的自调Q激光输出。利用透射率1％的耦合输出镜，得到最低激光输出的抽运阈值功率仅为70mW。在透射率为2％的输出镜条件下，得到最大输出激光功率为390mw，此时激光的斜度效率达到20%。实验详细记录了自调Q脉冲的周期和宽度随抽运功率的变化关系，随着抽运功率的增加，自调Q脉冲的周期和宽度呈指数衰减。同时，还采用单棱镜进行光谱调谐实验，获得了1036～1059nm的自调Q激光调谐输出。

Spectral properties of Ho : GdVO4 single crystal

Absorption and emission spectral properties of GdVO4 single crystal doped with Ho3+ ions were investigated at room temperature. Polarized absorption cross section is calculated in the range of 400-2200nm. Results were analyzed and parameters were calculated based on Judd-Ofelt theory, the emission spectrum shows that the emission intensity around the wavelength of 546 nm associated with transition S-5(2) -> I-5(8) is much stronger than other bands in the observed range and potentially enable the green light output around this emission band in this crystal. (c) 2006 Elsevier B.V. All rights reserved.

Diode-pumped Yb : YAG ceramic laser

Transparent polycrystalline Yb:YAG ceramics were fabricated by solid-state reactive sintering a mixture of commercial Al2O3, Y2O3, and Yb2O3 powders. The powders were mixed in ethanol and doped with 0.5 wt% tetraethoxysilane, dried, and pressed. Pressed samples were sintered at 1730 degrees C in vacuum. Transparent fully dense samples with grain sizes of several micrometers were obtained. The phase from 1500 degrees to 1700 degrees C was important for the grain growth, in which the grains grew quickly and a mass of pores were eliminated from the body of the sample. Annealing was an important step to remove the vacancies of oxygen and transform Yb2+ to Yb3+. The 1 at.% Yb:YAG ceramic sample was pumped by a diode laser to study the laser properties. The maximum output power of 1.02 W was obtained with a slope efficiency of 25% at 1030 nm. The size of the lasering sample was 4 mm x 4 mm x 3 mm.

Growth and spectroscopic characteristics of Yb : LPS single crystal

For the first time, a high optical quality Yb3+-doped lutetium pyrosilicate laser crystal Lu2Si2O7 (LPS) was grown by the Czochralski (Cz) method. The segregation coefficient of ytterbium ion in Yb:LPS crystal detected by the inductively coupled plasma atomic emission spectrometer (TCP-AES) method is equal to 0.847. X-ray powder diffraction result confirms the C2/m phase monoclinic space group of the grown crystal and the peaks corresponding to different phases were indexed. The absorption and fluorescence spectra, as well as fluorescence decay lifetime of Yb3+ ion in LPS have been investigated. The absorption and fluorescence cross-sections of the transitions F-2(7/2) <-> F-2(5/2) of Yb3+ ion in LPS crystal have been determined. The advantages of the Yb:LPS crystal including high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections (1.33 x 10(-2) cm(2)) and particularly broad emission bandwidth (similar to 62 nm) indicated that the Yb:LPS crystal seemed to be a promising candidate used as compact, efficient thin chip lasers when LD is pumped at 940 and 980 nm due to its low-symmetry monoclinic structure and single crystallographic site. (c) 2007 Elsevier B.V. All rights reserved.