Carbon-based silicon nanohybrid anode materials for rechargeable lithium ion batteries

Silicon has demonstrated great potential as anode materials for next-generation high-energy density rechargeable lithium ion batteries. However, its poor mechanical integrity needs to be improved to achieve the required cycling stability. Nano-structured silicon has been used to prevent the mechanical failure caused by large volume expansion of silicon. Unfortunately, pristine silicon nanostructures still suffer from quick capacity decay due to several reasons, such as formation of solid electrolyte interphase, poor electrical contact and agglomeration of nanostructures. Recently, increasing attention has been paid to exploring the possibilities of hybridization with carbonaceous nanostructures to solve these problems. In this review, the recent advances in the design of carbon-silicon nanohybrid anodes and existing challenges for the development of high-performance lithium battery anodes are briefly discussed.

Effect of Load on Dry Sliding Wear of Aluminum-Silicon Alloys

Aluminum-silicon alloy pins were slid against steel disks under nominally dry condition at a speed of 0.6 m s-1. Each pin was slid at a constant load for 5 min, the load being increased in suitable steps from 2 to 65 N. The results show the wear to increase almost monotonically with load, to be sensitive to the presence of silicon in the alloy, and to be insensitive to actual silicon content. The monotonic nature of wear rate-load characteristic suggests that one dominant wear mechanism prevails over the load range studied. Morphological studies of the pin surface and the debris support this contention and point to delamination as being the dominant mode of wear.

Stable Dispersions of Metal Oxide Nanowires and Nanoparticles in Water, Dimethylformamide and Toluene

In view of the important need to generate well-dispersed inorganic nanostructures in various solvents, we have explored the dispersion of nanostructures of metal oxides such as TiO2, Fe3O4 and ZnO in solvents of differing polarity in the presence of several surfactants. The solvents used are water, dimethylformamide (DMF) and toluene. The surfactant-solvent combinations yielding the best dispersions are reported alongwith some of the characteristics of the nanostructures in the dispersions. The surfactants which dispersed TiO2 nanowires in water were polyethylene oxide (PEO), Triton X-100 (TX-100), polyvinyl alcohol (PVA) and sodium bis(2-ethylhexyl) sulphosuccinate (AOT). TiO2 nanoparticles could also be dispersed with AOT and PEO in water, and with AOT in toluene. In DMF, PVA, PEO and TX-100 were found to be effective, while in toluene, only AOT gave good dispersions. Fe3O4 nanoparticles were held for long periods of time in water by PEO, AOT, PVA and polyethylene glycol (PEG), and by AOT in toluene. In the case of ZnO nanowires, the best surfactant-solvent combinations were found to be, PEO, sodium dodecyl sulphate (SIDS) and AOT in water and AOT, PEG, PVA, PEO and TX-100 in DMF In toluene, stable dispersions of ZnO nanowires were obtained with PEO. We have also been able to disperse oxide nanostructures in non-polar solvents by employing a hydrophobic silane coating on the surface.

Can Nano Silicon Be Made Optically Active?

There has been a lot of effort to make Silicon optically active. In this work we examine two methods of generating nanocrystals of Silicon from bulk fragments. This approach of ours allows us to play with the shape of the nanocrystals and therefore the degeneracy of the conduction band minimum. We go on to examine whether similar sized particles with different shapes have the same physical properties, and finally whether Silicon may be rendered optically active by this route. While we do find that similar sized particles with different shapes may have different band gaps, this route of modifying the degeneracy of the conduction band minimum makes nano Si slightly optically active.

Properties of the gold related acceptor level in silicon

The apparent thermal activation energy of 0.56 eV and the electron thermal capture cross section of 2.0 × 10-16 cm2 are measured for the gold related acceptor level in p+ nn+ silicon diodes by isothermal current transient and DLTS techniques. Using the emission and capture rate data and a degeneracy ratio of 2, the energy separation of the trap level from the conduction band is calculated and found to have the same temperature dependence as the band gap indicating that the acceptor level is pinned with respect to the valence band a t Ev + 0.637 eV.

Resistivity noise in crystalline magnetic nanowires and its implications to domain formation and kinetics

We have investigated the time-dependent fluctuations in electrical resistance, or noise, in high quality crystalline magnetic nanowires within nanoporous templates. The noise increases exponentially with increasing temperature and magnetic field, and has been analyzed in terms of domain wall depinning within the Neel-Brown framework. The frequency-dependence of noise also indicates a crossover from nondiffusive kinetics to long-range diffusion at higher temperatures, as well as a strong collective depinning, which need to be considered when implementing these nanowires in magnetoelectronic devices.

A study on the reaction of silicon tetrahalides with phosphorus pentoxide and of alkali metal fluorosilicates with phosphorus pentoxide and sulphur trioxide

Silicon tetrahalides, SiX4 (X=F, Cl, Br) and the fluorosilicates of sodium and potassium react with phosphorus pentoxide above 300°C. The tetrahalides give rise to the corresponding phosphoryl halides and silica, while the fluorosilicates form the corresponding metal fluorophosphates and silicon tetrafluoride. The reaction of the fluorosilicates of sodium and potassium with sulphur trioxide occurs at room temperature to give rise to the corresponding metal fluorosulphates and silicon tetrafluoride.

Combined effect of double antireflection coating and reversible molecular doping on performance of few-layer graphene/n-silicon Schottky barrier solar cells

Few-layer graphene films were grown by chemical vapor deposition and transferred onto n-type crystalline silicon wafers to fabricate graphene/n-silicon Schottky barrier solar cells. In order to increase the power conversion efficiency of such cells the graphene films were doped with nitric acid vapor and an antireflection treatment was implemented to reduce the sunlight reflection on the top of the device. The doping process increased the work function of the graphene film and had a beneficial effect on its conductivity. The deposition of a double antireflection coating led to an external quantum efficiency up to 90% across the visible and near infrared region, the highest ever reported for this type of devices. The combined effect of graphene doping and antireflection treatment allowed to reach a power conversion efficiency of 8.5% exceeding the pristine (undoped and uncoated) device performance by a factor of 4. The optical properties of the antireflection coating were found to be not affected by the exposure to nitric acid vapor and to remain stable over time.

Molybdenum trioxide (MoO3)/silicon photodiodes

Molybdenum trioxide (MoO3) has been deposited onto single-crystal p-type silicon by neutralized ion-beam sputter techniques. The results indicate that the diode behavior is a function of oxygen partial pressure during the reactive sputtering. Film thickness, deposition rate, index of refraction, resistivity, and integrated transmission have been measured under AM1 illumination. It appears that thin films of MoO3 could serve as an n-type transparent semiconductor for photovoltaic applications. Applied Physics Letters is copyrighted by The American Institute of Physics.

A model for doped-oxide-source diffusion with a chemical reaction at the silicon-silicon dioxide interface

A mathematical model for doped-oxide-source diffusion is proposed. In this model the concept of segregation of impurity at the silicon-silicon dioxide is used and also a constant of “rate limitation” is introduced through a chemical reaction at the interface.

Comment on "Pseudoelasticity of Cu-Zr nanowires via stress-induced martensitic phase transformations"

Recently, a novel stress-induced phase transformation in an initial < 100 >/{100} B2-CuZr nanowire has been reported for the first time [Sutrakar and Mahapatra, Mater. Lett. 63, 1289 (2009)]. Following this, a martenisitic phase transformation in Cu-Zr nanowire was shown [Cheng et al., Appl. Phys. Lett. 95, 021911 (2009)] using the same idea (Sutrakar and Mahapatra, Mater. Lett. 63, 1289 (2009)]. The pseudoelastic recovery of the bct phase of Cu-Zr by unloading has also been shown [Cheng et al., Appl. Phys. Lett. 95, 021911 (2009)]. They also tested the epitaxial bain path [Alippi et al., Phys. Rev. Lett. 78, 3892 (1997)] and reported that the bct phase in the nanowire is metastable, whereas the bulk counterpart is unstable. This aspect is re-examined in this comment with corrected results.

Role of silicon in resisting subsurface plastic deformation in tribology of aluminium-silicon alloys

Silicon particles standing proud on aluminium-silicon alloy surfaces provide protection in tribology. Permanent sinking of such particles into the matrix under load can be deleterious. The mechanical response of the alloy to nano-indentation of single silicon particles embedded in the matrix is explored. A nominal critical pressure required to plastically deform the matrix to permanently embed the particle is determined experimentally. Within a framework suggested by two-dimensional models of plastic response to indentation, a probable correlation is established between the normal mean pressure required to cause permanent sinking of silicon particles and a factor which relates the relevant particle dimensions.