Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

We present an extensive study on the structural, electrical and optical properties of InN thin films grown on c-Al2O3, GaN(130 nm)/Al2O3, GaN(200 nm)/Al2O3 and GaN(4 mu m)/Al2O3 by using plasma-assisted molecular beam epitaxy. The high resolution X-ray diffraction study reveals better crystalline quality for the film grown on GaN(4 mu m)/Al2O3 as compared to others. The electronic and optical properties seem to be greatly influenced by the structural quality of the films, as can be evidenced from Hall measurement and optical absorption spectroscopy. Kane's k.p model was used to describe the dependence of optical absorption edge of InN films on carrier concentration by considering the non-parabolic dispersion relation for carrier in the conduction band. Room temperature Raman spectra for the InN films grown on GaN show the signature of residual tensile stress in contrast to the compressive stress observed for the films grown directly on c-Al2O3. (C) 2012 Elsevier B.V. All rights reserved.

Growth and Characterization of Vertically Aligned ZnO Hierarchical Nanostructures

Vertically aligned zinc oxide (ZnO) hierarchical nanostructures were developed by homo-epitaxial growth method using nickel as catalyst, and their physical properties were investigated and reported. ZnO nanorods grown by vapor-liquid-solid method are single crystalline and grown along the < 001 > direction, whereas the second order nano-branches are grown along the < 110 > direction. The homo-epitaxial relation between nano-branches (ZnOb) and ZnO cores (ZnOc) is found to be (110)ZnOb//(110)ZnOc and (002)ZnOb//(002)ZnOc. The simple and hierarchical nanostructures exhibited ultra-violet emission peak at 380 nm as near band edge emission of ZnO and have very weak defects related peak at 492 nm. (C) 2013 The Electrochemical Society. All rights reserved.

Epitaxial Co metal thin film grown by pulsed laser deposition using oxide target

We report here the growth of epitaxial Co metal thin film on c-plane sapphire by pulsed laser deposition (RD) using Co:ZnO target utilizing the composition inhomogeneity of the corresponding plasma. Two distinct plasma composition regions have been observed using heavily alloyed Co0.6Zn0.4O target. The central and intense region of the plasma grows Co:ZnO film; the extreme tail grows only Co metal with no trace of either ZnO or Co oxide In between the two extremes, mixed phases (Co +Co-oxides +Co:ZnO) were observed. The Co metal thin film grown in this way shows room temperature ferromagnetism with large in plane magnetization similar to 1288 emu cm(-3) and a coerciviLy of similar to 230 Oe with applied field parallel to the film-substrate interface. Carrier density of the film is similar to 10(22) cm(-3). The film is epiLaxial single phase Co metal which is confirmed by both X-ray diffraction and transmission electron microscopy characierizaLions. Planar Hall Effect (PHE) and Magneto Optic Kerr Effect (MOKE) measurements confirm that the film possesses similar attributes of Co metal. The result shows that the epiLaxial Co metal thin film can be grown from its oxides in the PLD. (C) 2014 Elsevier B.V. All rights reserved.

Structural and optical characterization of nonpolar (10-10) m-InN/m-GaN epilayers grown by PAMBE

Plasma-assisted molecular beam epitaxy growth of (10-10) m-InN/(10-10) m-GaN was carried out on bare (10-10) m-sapphire substrate. The high resolution X-ray diffraction studies confirmed the orientation of the as-grown films. Nonpolar InN layer was grown at different growth temperatures ranging from 390 degrees C to 440 degrees C and the FWHM of rocking curve revealed good quality film at low temperatures. An in-plane relationship was established for the hetrostructures using phi-scan and a perfect alignment was found for the epilayers. Change of morphology of the films grown at different temperatures was observed using an atomic force microscopy technique showing the smoothest film grown at 400 degrees C. InN optical band gap was found to be vary from 0.79-0.83 eV from absorption spectra. The blue-shift of absorption edge was found to be induced by excess background electron concentration. (C) 2015 Elsevier B.V. All rights reserved.

From Hexagonally Arrayed Nanorods To Ordered Porous Film Through Controlling The Morphology Of Zno Crystals

The macrostructure can be changed by changing the morphology of its units. In this article, we use a colloidal template route, combined with hydrothermal growth method, to get the hexagonally arrayed ZnO nanorods on the polycrystalline ZnO substrate. More significantly, through controlling the morphology of ZnO crystals by adding structure-directing agent in the precursor solution, the highly ordered porous ZnO films were obtained instead of ZnO nanorods. This templated solvent-thermal method has great potential in micro/nano-fabrication. (C) 2008 Elsevier B.V. All rights reserved.

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.

On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method

Two-dimensional ZnO nanowall networks were grown on ZnO-coated silicon by thermal evaporation at low temperature without catalysts or additives. All of the results from scanning electronic spectroscope, X-ray diffraction and Raman scattering confirmed that the ZnO nanowalls were vertically aligned and c-axis oriented. The room-temperature photoluminescence spectra showed a dominated UV peak at 378 nm, and a much suppressed orange emission centered at similar to 590 nm. This demonstrates fairly good crystal quality and optical properties of the product. A possible three-step, zinc vapor-controlled process was proposed to explain the growth of well-aligned ZnO nanowall networks. The pre-coated ZnO template layer plays a key role during the synthesis process, which guides the growth direction of the synthesized products. (C) 2007 Elsevier B.V. All rights reserved.

Experiment on the thermocapillary convection of a mercury liquid bridge in a floating half zone

A liquid bridge of a floating half zone consisting of liquid mercury sealed in a glass tube with nitrogen atmosphere was used for the experiment of thermocapillary convection with a low Prandtl number liquid. A non-contacted diagnostic method was developed to monitor the surface flow and the surface oscillation. A growing surface film (or skin) is a crucial source to suppress thermocapillary convection, and is discussed in this paper. For the case of a mercury Liquid bridge, the critical Marangoni number was obtained as 900, and the oscillatory frequency was around 5 Hz.

Effects of Thermocapillary Convection on the Growth Process in Industrial 8-inch Silicon Czochralski Growth

Czochralski (CZ) crystal growth process is a widely used technique in manufacturing of silicon crystals and other semiconductor materials. The ultimate goal of the IC industry is to have the highest quality substrates, which are free of point defect, impurities and micro defect clusters. The scale up of silicon wafer size from 200 mm to 300 mm requires large crucible size and more heat power. Transport phenomena in crystal growth processes are quite complex due to melt and gas flows that may be oscillatory and/or turbulent, coupled convection and radiation, impurities and dopant distributions, unsteady kinetics of the growth process, melt crystal interface dynamics, free surface and meniscus, stoichiometry in the case of compound materials. A global model has been developed to simulate the temperature distribution and melt flow in an 8-inch system. The present program features the fluid convection, magnetohydrodynamics, and radiation models. A multi-zone method is used to divide the Cz system into different zones, e.g., the melt, the crystal and the hot zone. For calculation of temperature distribution, the whole system inside the stainless chamber is considered. For the convective flow, only the melt is considered. The widely used zonal method divides the surface of the radiation enclosure into a number of zones, which has a uniform distribution of temperature, radiative properties and composition. The integro-differential equations for the radiative heat transfer are solved using the matrix inversion technique. The zonal method for radiative heat transfer is used in the growth chamber, which is confined by crystal surface, melt surface, heat shield, and pull chamber. Free surface and crystal/melt interface are tracked using adaptive grid generation. The competition between the thermocapillary convection induced by non-uniform temperature distributions on the free surface and the forced convection by the rotation of the crystal determines the interface shape, dopant distribution, and striation pattern. The temperature gradients on the free surface are influenced by the effects of the thermocapillary force on the free surface and the rotation of the crystal and the crucible.

A new method to analyse the Peierls-Nabarro model of an edge dislocation in a rectangular plate

A new method is presented here to analyse the Peierls-Nabarro model of an edge dislocation in a rectangular plate. The analysis is based on the superposition scheme and series expansions of complex potentials. The stress field and dislocation density field on the slip plane can be expressed as the first and the second Chebyshev polynomial series respectively. Two sets of governing equations are obtained on the slip plane and outer boundary of the rectangular plate respectively. Three numerical methods are used to solve the governing equations.

Small angle X-ray scattering of the colloidal crystal

The monodisperse polystyrene spheres are assembled into the colloidal crystal on the glass substrate by vertical deposition method, which is aimed at the so-called photonic crystal applications. The structural information of the bulk colloidal crystal is crucial for understanding the crystal growth mechanism and developing the various applications of colloidal crystal. Small-angle X-ray scattering (SAXS) technique was used to obtain the bulk structure of the colloidal crystal at Beamline 1W2A of BSRF. It is found that the SAXS pattern is sensitive to the relative orientation between the colloidal sample and the incident X-ray direction. The crystal lattice was well distinguished and determined by the SAXS data.

大尺寸Ce：Lu1.6Y0.4SiO5闪烁晶体的生长和光谱特性

采用中频感应提拉法生长出尺寸为Ф60mm×110mm的Ce：Lu1.6Y0.4SiO5（LYSO）晶体,与LSO晶体相比,LYSO晶体的优势是提高了晶体质量、降低了熔点和原料成本等.在室温下测试了LYSO晶体的透过光谱、激发光谱和发射光谱,结果表明Y的加入使LSO晶体的吸收边向短波方向偏移.Ce^3＋的4f^1→5d^1跃迁吸收导致紫外区产生三个吸收带.发射光谱具有Ce^3＋典型的双峰特征,经Gaussian多峰值拟合,双峰395nm和418nm归属于Ce1发光中心,而435nm的发光峰与Ce2发光中心有

Growth and spectral characterization of beta-Ga2O3 single crystals

Beta gallium oxide (beta-Ga2O3) single crystals were grown by the floating zone technique. The absorption spectra and the luminescence of the crystals were measured. The absorption spectra showed an intrinsic short cutoff edge around 260 nm with two shoulders at 270 and 300 nm. Not only the characteristic UV (395 nm), blue (471 nm) and green (559 nm) lights, but also the red (692 nm) light can be seen in the emission spectra. The deep UV light was attributed to the existing of quantum wells above the valence band and the red light was owed to the electron-hole recombination via the vicinity donors and acceptors. (c) 2006 Elsevier Ltd. All rights reserved.

高质量LiGaO2晶体的提拉法生长及表征

采用提拉法成功地生长了高质量的LiGaO2单晶体,生长过程中没有观察到挥发现象。通过四晶X射线衍射、化学腐蚀、光学显微、透过光谱以及原子力显微镜对晶体的质量进行了表征。结果表明：晶体中无包裹物及气泡,具有很高的质量,（001）面晶片的摇摆曲线半高宽仅为16.2arcsec,正交的（001）、（100）及（010）三个晶面具有不同的腐蚀形貌,其位错密度均低于10^4/cm^2;LiGaO2晶体的吸收边约为220nm;化学机械抛光后的晶片表面非常光滑,其均方根粗糙度仅为0.1nm（5×5μm^2）。