974 resultados para 111-2


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本论文利用扫描隧道显微镜(STM)在Au(111)电极上结合电化学方法在分子水平上观察分子的吸附组装和结构调控等。主要内容如下: (1) 用现场电化学扫描隧道显微镜(ECSTM)在Au(111)电极上研究了巯基己醇(MHO)取代六苯并苯的详细过程。取代速度强烈依赖于MHO的浓度。浓度较低时,反应速度较慢,我们可以用现场ECSTM跟踪观察详细的取代过程。取代首先发生在靠近重构线肘部的位置,出现单分子或多个六苯并苯分子的取代而形成的pits。随着取代过程的进行,这些小的pits生长或合并成较大的pits;pits周围的六苯并苯分子逐渐被MHO取代,最终在限定的区域内形成有序的domain。观察局部区域的取代过程,我们发现沿着重构线的方向扩展速度最快。快速取代之后,MHO在Au(111)电极表面形成( )R30°晶格结构,而慢速取代之后,MHO在表面形成c(4×2)超结构。与MHO在干净的Au(111)电极上的吸附相比,在六苯并苯修饰的Au(111)电极上即使在很低的浓度下也没有观察到平躺的物理吸附相,而是直接形成化学吸附相。这可能是由于六苯并苯的存在,MHO的碳氢链不能直接与Au原子接触。通过数据分析,我们发现取代速率曲线呈倒S形状。 (2) 我们用循环伏安法(CV)和ECSTM研究了腺嘌呤(Adenine,A),胸腺嘧啶(Thymine,T)和鸟嘌呤(Guanine,G)单组分及混合组分(A+T)的电化学二维相变。施加在Au(111)电极上的电位不同,A会呈现不同的吸附状态,包括物理吸附相和化学吸附相。在物理吸附的电势范围,高分辨ECSTM图像显示,同一个电势下共存着多样性的A的吸附结构。当基底电势变得更正时,一种更倾斜的吸附状态也就是A的化学吸附相会形成。在较负电位下,A和T能通过分子之间氢键作用在Au(111)电极上形成一种新的网络结构,而G能形成多层吸附。 (3) 利用STM研究了不同方法移除硫醇自组装膜之后金电极表面的再生情况。分别使用了化学法和电化学还原脱附法。化学法比较简单,使用的试剂有王水,piranha和NaBH4。王水对金电极表面有强腐蚀作用;piranha和NaBH4对金表面的作用较小,但是NaBH4处理之后的金表面上会有较多的亮岛出现。在移除自组装膜之后的电极上直接组装六苯并苯,我们观察到用piranha和NaBH4处理之后的金电极表面上六苯并苯自组装膜缺陷较多,有序domain也比较小。电化学法脱附可以得到比较干净的金表面,直接组装的六苯并苯自组装膜有序性好,缺陷少。而且,电化学脱附法通过控制电位可以实现硫醇自组装膜和六苯并苯自组装膜的相互转换。

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采用Cr/Al催化体系,成功地合成了全同1,2-聚丁二烯(PBD),并用DSC方法、X-射线衍射、红外光谱及~(13)C-NMR的方法进行结构与物性测定,得如下结果:全同1,2-PBD的熔点为124.3℃;三角晶系中,分子链成了螺旋,晶胞参数为a=17.3A,c= 6.5A;在红外光谱中,其特征谱带出现在694.4 cm~(-1)处;在~(13)C-NMR谱中仅出现四条谱峰,其化学位移分别为142.51、111.56、39.26、37.43 ppm。全同1,2-PBD的~(13)C-NMR谱提供的实验数据表明,在~(13)C-NMR谱中1,2-PBD-CH二碳十个五元组谱峰的归属是有别于Elgert、Kumar已有的归属。它属于一种新的归属,与半经验方法所推演的结果相符。它恰巧同聚丙烯侧甲基五元组谱峰的归属一致。采用半经验方法研究了1,2-PBD的~(13)C-NMR增中CH二碳五元组、CH_2-碳四元组及六元组共振谱峰,同时讨论了模型链的链长、温度以及立构序列的排列对各立构序列键概率的影响,求得了相应的r值。同时采用经验方法对1,2-PBD的~(13)C-NMR谱中CH_2=碳、CH-碳五元组及CH_2-碳四元组谱峰做了归属。两种方法对CH_2-碳谱峰的归属得到了一致的结果。

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50mm SiC films with high electrical uniformity are grown on Si(111) by a newly developed vertical low-pressure chemical vapor deposition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achieved by intentional introduction of ammonia and boron into the precursor gases.The dependence of growth rate and surface morphology on the C/Si ratio and optimized growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN films are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epitaxy (MBE).The data of both X-ray diffraction and low temperature photoluminescence of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buffer layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.

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为了研究(111)衬底的特性以及实现等边三角形微腔激光器,利用金属有机化学气相淀积(MOCVD)研究了(111)A InP衬底上InGaAsP外延层的表面形貌和光学特性。考虑到(111)A InP衬底的悬挂键密度比较低,在生长过程中有意提高了V/III比。通过扫描电子显微镜(SEM)和光荧光(PL)谱分别研究了外延层的表面形貌和光学特性。实验发现,表面形貌和光学特性随V/III比和温度的变化非常大。最佳V/IlI比和温度分别为400和625℃。

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利用衍衬、SAED、HRTEM对在(111)Si上外延生长的六方GaN进行了观察分析。GaN外延层与缓冲层和基底的取向关系为(0001)_(GaN)∥(0001)_(AlN)∥(111)_(Si),[11(2-bar)0]_(GaN)∥[11(2-bar)0]_(AlN)∥[110]_(Si)。GaN外延层中存在倒反畴。GaN中位错以刃型位错为主。In_(0.1) Ga_(0.9) N/GaN的多重量子阱结构(MQW)具有阻挡穿透位错,降低位错密度的作用。

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采用质量分离的低能双离子束淀积(IBD)技术,在硅(111)衬底上共淀积,生长了氧化铈外延薄膜。椭圆偏振仪测得,膜厚2000A。俄歇能谱仪测得,外延层内铈、氧分布均匀,具有很好的正化学比。X射线双晶衍射得到明显的氧化铈(111),(222)峰,半高宽≤23''。

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The crystal structure of the title compound, C12H10ClF3O3, was determined in order to establish the configuration of the C double bond. The compound was found to be the Z isomer. The crystal structure is dominated by Cl center dot center dot center dot O halogen bonds [Cl center dot center dot center dot O = 3.111 (3) angstrom], as well as C-H center dot center dot center dot O and C-H center dot center dot center dot F hydrogen-bonding interactions, that connect neighboring molecules into a three-dimensional supramolecular network.

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The crystal structure of Er(PM)(3)(TP)(2) [PM = 1-Phenyl-3-methyl-4-isobutyryl-5-pyrazoloiie, TP = triphenyl phosphine oxide] was reported and its photoluminescence properties were studied by UV-vis absorption, excited, and emission spectra. The Judd-ofelt theory was introduced to calculate the radiative transition rate and the radiative decay time of 3.65 ms for the I-4(13/2) -> I-4(15/2) transition of Er3+ ion in this complex.

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The replacement of coronene monolayer on Au (111) by 6-mercapto-1-hexanol (MHO) was studied by in situ scanning tunneling microscopy (STM) in solutions. It was found that the rate of replacement depends strongly on the concentration of MHO. The replacement finished within a second at a higher concentration of MHO. At a lower concentration, the slow replacement could be followed by in situ STM. The replacement occurred initially near the elbow position of reconstructed Au (111) with the formation of pits in a single or several missing molecules. With the proceeding of replacement, these small pits expanded, and the surrounding coronene molecules were gradually substituted by MHO, which developed into ordered domains within a spatial confined environment. Meanwhile, the reconstruction of Au (111) was lifted. The replacement expanded fast along the reconstruction lines in the domain. For the fast replacement, a (root 3 x root 3) R30 degrees adlattice was observed, while a c(4 x 2) superlattice was observed for the slow replacement.

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It was studied that the nanostructure formed on a gold surface via a simple oxidation-reduction cycles (ORC) in 0.1 M KCl containing Ru(bpy)(3)(2+) with different concentrations. Atomic force microscopy (AFM) and energy-dispersed spectroscopy (EDS) were used to characterize the nanostructure formed on the gold surface. Sweep-step voltammetry and corresponding electroluminescence (ECL) response, in situ electrochemical quartz crystal microbalance (EQCM) measurement were used to monitor the ORC. procedure. It was found that the surface structure became more uniform in the presence of Ru(bpy)(3)(2+), and the surface roughness was decreasing with the increasing of Ru(bpY)(3)(2+) concentration, suggesting a simple and effective method to control the formation of nanostructure on the gold surface.

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The crystal structures of EtEDTB.1.4C(2)H(5)OH.5H(2)O 1 and H4EtEDTB(ClO4)(4).C2H5OH 2 (EtEDTB = N, N,N',N'-tetrakis[2-(1-ethylbenzimidazolyl)methyl]-1,2-ethanediamine) have been determined by single-crystal X-ray diffraction method. Compound 1 crystallizes in the space group P(1) over bar with a = 11.489(2), b = 11.866(3), c = 12.002(3) Angstrom, alpha = 97.47(2), beta = 114.564(13), gamma = 114.11(2)degrees, V = 1266.6(5) Angstrom(3), Z = 1, M-r = 847.48, D-c = 1.111 g/cm(3), F(000) = 456 and mu(MoKalpha) = 0.076 mm(-1). A total of 5207 reflections were measured for 1, of which 4323 were independent. The structure of 1 was solved by direct methods and refined by full-matrix least-squares technique to the final R = 0.0706 and wR = 0.1802 for 1318 observed reflections with I > 2sigma(I). In the structure of 1, centrosymmetric EtEDTB molecules are linked by hydrogen bonds through water and ethanol to form 2-dimensional network. Compound 2 crystallizes in the space group C2/c with a = 24.260(5), b = 13.040(3), c = 17.680(4) Angstrom, beta = 97.50(3)degrees, V = 5545.2(2) Angstrom(3), Z = 4, M-r = 1140.80, D-c = 1.366 g/cm(3), F(000) = 2384 and mu(MoKalpha) = 0.289 mm(-1).

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由 5-(2-乙酰基-1-甲硫基-3-羰基-亚丁基)-丙二酸亚异丙酯 (1)与邻苯二胺及乙酸镍()经一步反应合成了3{1-[2-( -3-羟基-1-甲基-2-亚丁烯氨基)-苯亚氨基 ]-乙基} 4-甲硫基-2,4-戊二烯-2-醇(3)的不对称四齿 Schiff碱镍()配合物(2),X射线衍射结果表明,配合物 2属单斜晶系,P21/C空间群.a=1.1476(2)nm,b=1.1782(2)nm,c=1.4810(3)nm;β=111.73(2)°,V=1.8602(7)nm3,Z=4,Rf=0.0535.电化学(循环伏安)测定结果表明,该配合物在测定条件下(阳极峰电位为1.1)发生了不可逆的氧化-还原反应.