Microstructure and grain boundary microanalysis of X70 pipeline steel

Grain boundaries (GBs), particularly ferrite: ferrite GBs, of X70 pipeline steel were characterized using analytical electron microscopy (AEM) in order to understand its intergranular stress corrosion cracking (IGSCC) mechanism(s). The microstructure consisted of ferrite (alpha), carbides at ferrite GBs, some pearlite and some small precipitates inside the ferrite grains. The precipitates containing Ti, Nb, V and N were identified as complex carbo-nitrides and designated as (Ti, Nb, WC, N). The GB carbides occurred (1) as carbides along ferrite GBs, (2) at triple points, and (3) at triple points and extending along the three ferrite GBs. The GB carbides were Mn rich, were sometimes also Si rich, contained no micro-alloying elements (Ti, Nb, V) and also contained no N. It was not possible to measure the GB carbon concentration due to surface hydrocarbon contamination despite plasma cleaning and glove bag transfer from the plasma cleaner to the electron microscope. Furthermore, there may not be enough X-ray signal from the small amount of carbon at the GBs to enable measurement using AEM. However, the microstructure does indicate that carbon does segregate to alpha : alpha GBs during microstructure development. This is particularly significant in relation to the strong evidence in the literature linking the segregation of carbon at GBs to IGSCC. It was possible to measure all other elements of interest. There was no segregation at alpha : alpha GBs, in particular no S, P and N, and also no segregation of the micro-alloying elements, Ti, Nb and V. (C) 2003 Kluwer Academic Publishers.

On the role of magnesium and nitrogen in the infiltration of aluminium by aluminium for rapid prototyping applications

Selective laser sintering has been used to fabricate an aluminium alloy powder preform which is subsequently debound and infiltrated with a second aluminium alloy. This represents a new rapid manufacturing system for aluminium that can be used to fabricate large, intricate parts. The base powder is an alloy such as AA6061. The infiltrant is a binary or higher-order eutectic based on either Al-Cu or At-Si. To ensure that infiltration occurs without loss of dimensional precision, it is important that a rigid skeleton forms prior to infiltration. This can be achieved by the partial transformation of the aluminium to aluminium nitride. In order for this to occur throughout the component, magnesium powder must be added to the alumina support powder which surrounds the part in the furnace. The magnesium scavenges the oxygen and thereby creates a microclimate in which aluminium nitride can form. The replacement of the ionocovalent Al2O3 with the covalent AlN on the surface of the aluminium powders also facilitates wetting and thus spontaneous and complete infiltration. (C) 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

The effect of the atmosphere and the role of pore filling on the sintering of aluminium

Alloys of Al-3.8Cu-1Mg-0.7Si, Al-4Cu-0.6Si-0.1Mg, Al-4Cu-1.2Mg and Al-1.9Mg-1.9Si were made using air atomised powder and conventional press-and-sinter powder metallurgy techniques. These were sintered under nitrogen with a controlled water content which varied from 3 to 630 ppm (a dew point of -69 to -25 degrees C), nitrogen-5%hydrogen, argon and argon-5% hydrogen, all at atmospheric pressure, or a vacuum of

A novel method for the production of aluminium nitride

A method has been developed to produce thick (> 400 mu m) AlN surface layers oil aluminium plates at 540 degrees C, under nitrogen at atmospheric pressure. A critical element of the process is the use of Mg powder placed in close proximity to the Al plate surface. The Mg reduces/disrupts the natural, protective oxide film on the Al surface. The nitride layers form through two distinct modes, one growing outward from the Al plate surface and the other growing into the Al. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

On the role of tin in the nitridation of aluminium powder

The role of tin in the mechanism by which aluminium nitride grows on aluminium powder is explored. In the absence of tin, the aluminium powder nitrides rapidly, with growth occurring both into and out from the surface of the particles. In contrast, nitridation occurs more slowly in the presence of tin, which is incorporated in the growing nitride. When the tin is depleted, rapid nitridation occurs. The initial tin concentration determines the point at which the growth rate changes. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Characteristics of low temperature PECVD silicon nitride for MEMS structural materials

Materials and mechanical characteristics of the low temperature PECVD silicon nitrides have been investigated using various analytical and testing techniques. TEM and SEM examinations reveal that there is no distinct microstructural difference existing between the films deposited under different conditions. However, their mechanical properties determined by nanoindentation indicate otherwise. The variations in mechanical properties with deposition conditions are found to be strongly correlated to the change in silicon-to-nitrogen ratio in the film.

Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films

The effect of deposition conditions on characteristic mechanical properties - elastic modulus and hardness - of low-temperature PECVD silicon nitrides is investigated using nanoindentation. lt is found that increase in substrate temperature, increase in plasma power and decrease in chamber gas pressure all result in increases in elastic modulus and hardness. Strong correlations between the mechanical properties and film density are demonstrated. The silicon nitride density in turn is shown to be related to the chemical composition of the films, particularly the silicon/nitrogen ratio. (c) 2006 Elsevier B.V. All rights reserved.

Nitrogen implantation of tool steels and engineering coatings

Ion implantation modifies the surface composition and properties of materials by bombardment with high energy ions. The low temperature of the process ensures the avoidance of distortion and degradation of the surface or bulk mechanical properties of components. In the present work nitrogen ion implantation at 90 keV and doses above 1017 ions/cm2 has been carried out on AISI M2, D2 and 420 steels and engineering coatings such as hard chromium, electroless Ni-P and a brush plated Co-W alloy. Evaluation of wear and frictional properties of these materials was performed with a lubricated Falex wear test at high loads up to 900 N and a dry pin-on-disc apparatus at loads up to 40 N. It was found that nitrogen implantation reduced the wear of AISI 420 stainless steel by a factor of 2.5 under high load lubricated conditions and by a factor of 5.5 in low load dry testing. Lower but significant reductions in wear were achieved for AISI M2 and D2 steels. Wear resistance of coating materials was improved by up to 4 times in lubricated wear of hard Cr coatings implanted at the optimum dose but lower improvements were obtained for the Co-W alloy coating. However, hardened electroless Ni-P coatings showed no enhancement in wear properties. The benefits obtained in wear behaviour for the above materials were generally accompanied by a significant decrease in the running-in friction. Nitrogen implantation hardened the surface of steels and Cr and Co-W coatings. An ultra-microhardness technique showed that the true hardness of implanted layers was greater than the values obtained by conventional micro-hardness methods, which often result in penetration below the implanted depth. Scanning electron microscopy revealed that implantation reduced the ploughing effect during wear and a change in wear mechanism from an abrasive-adhesive type to a mild oxidative mode was evident. Retention of nitrogen after implantation was studied by Nuclear Reaction Analysis and Auger Electron Spectroscopy. It was shown that maximum nitrogen retention occurs in hard Cr coatings and AISI 420 stainless steel, which explains the improvements obtained in wear resistance and hardness. X-ray photoelectron spectroscopy on these materials revealed that nitrogen is almost entirely bound to Cr, forming chromium nitrides. It was concluded that nitrogen implantation at 90 keV and doses above 3x1017 ions/cm2 produced the most significant improvements in mechanical properties in materials containing nitride formers by precipitation strengthening, improving the load bearing capacity of the surface and changing the wear mechanism from adhesive-abrasive to oxidative.

Effect of reaction mechanism on precursor exposure time in atomic layer deposition of silicon oxide and silicon nitride

Atomic layer deposition (ALD) of highly conformal, silicon-based dielectric thin films has become necessary because of the continuing decrease in feature size in microelectronic devices. The ALD of oxides and nitrides is usually thought to be mechanistically similar, but plasma-enhanced ALD of silicon nitride is found to be problematic, while that of silicon oxide is straightforward. To find why, the ALD of silicon nitride and silicon oxide dielectric films was studied by applying ab initio methods to theoretical models for proposed surface reaction mechanisms. The thermodynamic energies for the elimination of functional groups from different silicon precursors reacting with simple model molecules were calculated using density functional theory (DFT), explaining the lower reactivity of precursors toward the deposition of silicon nitride relative to silicon oxide seen in experiments, but not explaining the trends between precursors. Using more realistic cluster models of amine and hydroxyl covered surfaces, the structures and energies were calculated of reaction pathways for chemisorption of different silicon precursors via functional group elimination, with more success. DFT calculations identified the initial physisorption step as crucial toward deposition and this step was thus used to predict the ALD reactivity of a range of amino-silane precursors, yielding good agreement with experiment. The retention of hydrogen within silicon nitride films but not in silicon oxide observed in FTIR spectra was accounted for by the theoretical calculations and helped verify the application of the model.

Development of InAlN HEMTs for space application

This thesis investigates the emerging InAlN high electron mobility transistor (HEMT) technology with respect to its application in the space industry. The manufacturing processes and device performance of InAlN HEMTs were compared to AlGaN HEMTs, also produced as part of this work. RF gain up to 4 GHz was demonstrated in both InAlN and AlGaN HEMTs with gate lengths of 1 μm, with InAlN HEMTs generally showing higher channel currents (~150 c.f. 60 mA/mm) but also degraded leakage properties (~ 1 x 10-4 c.f. < 1 x 10-8 A/mm) with respect to AlGaN. An analysis of device reliability was undertaken using thermal stability, radiation hardness and off-state breakdown measurements. Both InAlN and AlGaN HEMTs showed excellent stability under space-like conditions, with electrical operation maintained after exposure to 9.2 Mrad of gamma radiation at a dose rate of 6.6 krad/hour over two months and after storage at 250°C for four weeks. Furthermore a link was established between the optimisation of device performance (RF gain, power handling capabilities and leakage properties) and reliability (radiation hardness, thermal stability and breakdown properties), particularly with respect to surface passivation. Following analysis of performance and reliability data, the InAlN HEMT device fabrication process was optimised by adjusting the metal Ohmic contact formation process (specifically metal stack thicknesses and anneal conditions) and surface passivation techniques (plasma power during dielectric layer deposition), based on an existing AlGaN HEMT process. This resulted in both a reduction of the contact resistivity to around 1 x 10-4 Ω.cm2 and the suppression of degrading trap-related effects, bringing the measured gate-lag close to zero. These discoveries fostered a greater understanding of the physical mechanisms involved in device operation and manufacture, which is elaborated upon in the final chapter.

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.