A compact diode-pumped injection seeded Nd : YAG laser with resonance-detection technique

A diode pumped injection seeded single-longitudinal-mode (SLM) Nd:YAG laser is achieved by using the resonance-detection technique in Q-switching operation. The pulsed oscillator laser uses a folded cavity to achieve compact construction. This system operates at 100 Hz and provides over 20 mJ/pulse of single-frequency 1064 nm output. The M-2 values of horizontal and vertical axes are 1.58 and 1.41, respectively. The probability of putting out single-longitudinal-mode pulses is 100%. The 355 nm laser output produced by frequency tripling has a linewidth less than 200 MHz. The laser can run over eight hours continually without mode hopping.

Localização eletrônica de sistemas aperiódicos em uma dimensão

Desde a descoberta do estado quasicristalino por Daniel Shechtman et al. em 1984 e da fabricação por Roberto Merlin et al. de uma superrede artificial de GaAs/ AlAs em 1985 com características da sequência de Fibonacci, um grande número de trabalhos teóricos e experimentais tem relatado uma variedade de propriedades interessantes no comportamento de sistemas aperiódicos. Do ponto de vista teórico, é bem sabido que a cadeia de Fibonacci em uma dimensão se constitui em um protótipo de sucesso para a descrição do estado quasicristalino de um sólido. Dependendo da regra de inflação, diferentes tipos de estruturas aperiódicas podem ser obtidas. Esta diversidade originou as chamadas regras metálicas e devido à possibilidade de tratamento analítico rigoroso este modelo tem sido amplamente estudado. Neste trabalho, propriedades de localização em uma dimensão são analisadas considerando-se um conjunto de regras metálicas e o modelo de ligações fortes de banda única. Considerando-se o Hamiltoniano de ligações fortes com um orbital por sítio obtemos um conjunto de transformações relativas aos parâmetros de dizimação, o que nos permitiu calcular as densidades de estados (DOS) para todas as configurações estudadas. O estudo detalhado da densidade de estados integrada (IDOS) para estes casos, mostra o surgimento de plateaux na curva do número de ocupação explicitando o aparecimento da chamada escada do diabo" e também o caráter fractal destas estruturas. Estudando o comportamento da variação da energia em função da variação da energia de hopping, construímos padrões do tipo borboletas de Hofstadter, que simulam o efeito de um campo magnético atuando sobre o sistema. A natureza eletrônica dos auto estados é analisada a partir do expoente de Lyapunov (γ), que está relacionado com a evolução da função de onda eletrônica ao longo da cadeia unidimensional. O expoente de Lyapunov está relacionado com o inverso do comprimento de localização (ξ= 1 /γ), sendo nulo para os estados estendidos e positivo para estados localizados. Isto define claramente as posições dos principais gaps de energia do sistema. Desta forma, foi possível analisar o comportamento autossimilar de cadeias com diferentes regras de formação. Analisando-se o espectro de energia em função do número de geração de cadeias que seguem as regras de ouro e prata foi feito, obtemos conjuntos do tipo-Cantor, que nos permitiu estudar o perfil do calor específico de uma cadeia e Fibonacci unidimensional para diversas gerações

Uncooled DWDM transmission system using tunable laser sources with anti-mode-hop control protocol

We propose an uncooled DWDM system where errors from uncontrolled laser mode-hopping are avoided by using a control protocol based on monitoring SMSR. We describe a proof-of-principle demonstration of a novel uncooled 50GHz DWDM system. © 2011 IEEE.

Temperature dependent electron transport in amorphous oxide semiconductor thin film transistors

A temperature-dependent mobility model in amorphous oxide semiconductor (AOS) thin film transistors (TFTs) extracted from measurements of source-drain terminal currents at different gate voltages and temperatures is presented. At low gate voltages, trap-limited conduction prevails for a broad range of temperatures, whereas variable range hopping becomes dominant at lower temperatures. At high gate voltages and for all temperatures, percolation conduction comes into the picture. In all cases, the temperature-dependent mobility model obeys a universal power law as a function of gate voltage. © 2011 IEEE.

Detection reliability analysis of passive DAS RFID system

Recently, it has been shown that improved wireless communication coverage can be achieved by employing distributed antenna system (DAS). The DAS RFID system is based on a novel technique whereby two or more spatially separated transmit and receive antennas are used to enable greatly enhanced tag detection performance over longer distances using antenna diversity combined with frequency and phase hopping. In this paper, we present a detection reliability evaluation of the DAS RFID in a typical lab environment. We conduct an extensive experimental analysis of passive RFID tag detection with different locations and orientations. The tag received signal strengths corresponding to various tag locations on one of the six different sides of a cube, and for different reader transmit power are collected and analyzed in this study.

Learning legged locomotion

Legged locomotion of biological systems can be viewed as a self-organizing process of highly complex system-environment interactions. Walking behavior is, for example, generated from the interactions between many mechanical components (e.g., physical interactions between feet and ground, skeletons and muscle-tendon systems), and distributed informational processes (e.g., sensory information processing, sensory-motor control in central nervous system, and reflexes) [21]. An interesting aspect of legged locomotion study lies in the fact that there are multiple levels of self-organization processes (at the levels of mechanical dynamics, sensory-motor control, and learning). Previously, the self-organization of mechanical dynamics was nicely demonstrated by the so-called Passive Dynamic Walkers (PDWs; [18]). The PDW is a purely mechanical structure consisting of body, thigh, and shank limbs that are connected by passive joints. When placed on a shallow slope, it exhibits natural bipedal walking dynamics by converting potential to kinetic energy without any actuation. An important contribution of these case studies is that, if designed properly, mechanical dynamics can generate a relatively complex locomotion dynamics, on the one hand, and the mechanical dynamics induces self-stability against small disturbances without any explicit control of motors, on the other. The basic principle of the mechanical self-stability appears to be fairly general that there are several different physics models that exhibit similar characteristics in different kinds of behaviors (e.g., hopping, running, and swimming; [2, 4, 9, 16, 19]), and a number of robotic platforms have been developed based on them [1, 8, 13, 22]. © 2009 Springer London.

Motor control optimization of compliant one-legged locomotion in rough terrain

While underactuated robotic systems are capable of energy efficient and rapid dynamic behavior, we still do not fully understand how body dynamics can be actively used for adaptive behavior in complex unstructured environment. In particular, we can expect that the robotic systems could achieve high maneuverability by flexibly storing and releasing energy through the motor control of the physical interaction between the body and the environment. This paper presents a minimalistic optimization strategy of motor control policy for underactuated legged robotic systems. Based on a reinforcement learning algorithm, we propose an optimization scheme, with which the robot can exploit passive elasticity for hopping forward while maintaining the stability of locomotion process in the environment with a series of large changes of ground surface. We show a case study of a simple one-legged robot which consists of a servomotor and a passive elastic joint. The dynamics and learning performance of the robot model are tested in simulation, and then transferred the results to the real-world robot. ©2007 IEEE.

Running and walking with compliant legs

It has long been the dream to build robots which could walk and run with ease. To date, the stance phase of walking robots has been characterized by the use of either straight, rigid legs, as is the case of passive walkers, or by the use of articulated, kinematically-driven legs. In contrast, the design of most hopping or running robots is based on compliant legs which exhibit quite natural behavior during locomotion. © 2006 Springer.

Guided self-organization in a dynamic embodied system based on attractor selection mechanism

Guided self-organization can be regarded as a paradigm proposed to understand how to guide a self-organizing system towards desirable behaviors, while maintaining its non-deterministic dynamics with emergent features. It is, however, not a trivial problem to guide the self-organizing behavior of physically embodied systems like robots, as the behavioral dynamics are results of interactions among their controller, mechanical dynamics of the body, and the environment. This paper presents a guided self-organization approach for dynamic robots based on a coupling between the system mechanical dynamics with an internal control structure known as the attractor selection mechanism. The mechanism enables the robot to gracefully shift between random and deterministic behaviors, represented by a number of attractors, depending on internally generated stochastic perturbation and sensory input. The robot used in this paper is a simulated curved beam hopping robot: a system with a variety of mechanical dynamics which depends on its actuation frequencies. Despite the simplicity of the approach, it will be shown how the approach regulates the probability of the robot to reach a goal through the interplay among the sensory input, the level of inherent stochastic perturbation, i.e., noise, and the mechanical dynamics. © 2014 by the authors; licensee MDPI, Basel, Switzerland.

Structure and magnetic property of (Ga,Cr)As films with different Cr contents

We report variations in structure and magnetic property of (Ga,Cr) As films with increasing Cr content x. Due to phase segregation, a tendency towards inhomogeneous distribution with increasing x is confirmed. Barkhausen-like magnetization and large remanent magnetic moment were also clearly observed in the samples with x<5.3%. However, spin-glass-like behaviors were observed in both dc and ac magnetic measurements, which might originate from the competition between magnetic nucleation and frustration of long ferromagnetic order in this inhomogeneous system. All the samples exhibit characteristics of variable-range hopping conductivity at temperature below 150 K. Typical magnetic circular dichroism structure was observed in the sample with x=7.9%.

Spin-Hall effect in the generalized honeycomb lattice with Rashba spin-orbit interaction

We study the spin-Hall effect in a generalized honeycomb lattice, which is described by a tight-binding Hamiltonian including the Rashba spin-orbit coupling and inversion-symmetry breaking terms brought about by a uniaxial pressure. The calculated spin-Hall conductance displays a series of exact or approximate plateaus for isotropic or anisotropic hopping integral parameters, respectively. We show that these plateaus are a consequence of the various Fermi-surface topologies when tuning epsilon(F). For the isotropic case, a consistent two-band analysis, as well as a Berry-phase interpretation. are also given. (C) 2009 Elsevier B.V. All rights reserved.

Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature

We report the low-temperature magnetotransport behaviors of (Ga,Mn)As films with the nominal Mn concentration x larger than 10%. The ferromagnetic transition temperature T-C can be enhanced to 191 K after postgrowth annealing (Ga,Mn)As with x=20%. The temperature T-m, corresponding to the resistivity minimum in the curve of resistivity versus temperature at temperature below T-C, depends on Mn concentration, annealing condition, and magnetic field. Moreover, we find that the variable-range hopping may be the main conductive mechanism when temperature is lower than T-m.

Carrier transport assisted by dopants in doped poly(N-vinylcarbozole) light-emitting diodes

We have investigated the transient electroluminescence (EL) onset of the double-layer light-emitting devices made from poly(N-vinylcarbozole) (PVK) doped with 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) and tris(8-hydroxy-quinoline) aluminium (Alq(3)). For the double-layered device in which PVK was doped with 0.1 wt% DCJTB, the EL onset of PVK lags that of DCJTB and Alq(3), while the EL onset of DCJTB and Alq(3) is simultaneous. However, the EL emission of the double-layered device of PVK/Alq(3) originates only from Alq(3). The results show that DCJTB dopants can not only help to tunnel electrons from Alq(3) zone to PVK but can also assist electrons transfer in PVK under high electric field by hopping between DCJTB molecules or from DCJTB to PVK sites at a low doping concentration of 0.1 wt%. When the DCJTB doping concentration is 4.0 wt%, the EL onset of Alq(3) lags that of DCJTB. The difference in the EL onsets of DCJTB, Alq(3) and PVK is attributed to the slow build-up of the internal space charge in the vicinity of the interface between PVK and Alq(3). The electron potential difference of the interface between Alq(3) and PVK doped by DCJTB can be adjusted by changing the DCJTB doping concentration in double-layer devices.

Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates

In this study, we report comparative luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). High-density InGaN quantum dots (QDs) are formed on GaN templates by decreasing the growth temperature and increasing the adatom hopping-barrier through surface passivation. Atomic force microscopy (AFM) has been employed to estimate the size and height of these dots. Photoluminescence (PL) spectra recorded from (1120) InGaN QDs/(1102) sapphire show much stronger emission intensity compared to spectra recorded from (0001) InGaN QDs/(0001) sapphire. Due to the absence of strong spontaneous polarization and piezoelectric field, such (1150) InGaN QDs in the active layers would lead to high efficiency light emitting devices. (c) 2005 Elsevier B.V. All rights reserved.

Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length

In this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics. (c) 2006 Optical Society of America.