Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature
| Data(s) |
2009
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| Resumo |
We report the low-temperature magnetotransport behaviors of (Ga,Mn)As films with the nominal Mn concentration x larger than 10%. The ferromagnetic transition temperature T-C can be enhanced to 191 K after postgrowth annealing (Ga,Mn)As with x=20%. The temperature T-m, corresponding to the resistivity minimum in the curve of resistivity versus temperature at temperature below T-C, depends on Mn concentration, annealing condition, and magnetic field. Moreover, we find that the variable-range hopping may be the main conductive mechanism when temperature is lower than T-m. National Natural Science Foundation of China 60836002 10674130Major State Basic Research of China 2007CB924903 Chinese Academy of Sciences KJCX2.YW.W09-1 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Chen, L (Chen, L.); Yan, S (Yan, S.); Xu, PF (Xu, P. F.); Lu, J (Lu, J.); Wang, WZ (Wang, W. Z.); Deng, JJ (Deng, J. J.); Qian, X (Qian, X.); Ji, Y (Ji, Y.); Zhao, JH (Zhao, J. H.) .Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature ,APPLIED PHYSICS LETTERS,NOV 2 2009,95(18):Art.No.182505 |
| Palavras-Chave | #半导体物理 #annealing |
| Tipo |
期刊论文 |
