Photoconductivity excitation spectrum for stretch-oriented PPV

We have obtained the photoconductivity (PC) excitation spectrum for a stretch-oriented poly(paraphenylene vinylene) film over a wide spectral range (up to 5 eV). The measurements were performed in the surface cell configuration with the electric field parallel or perpendicular to the stretch direction. Although the sample had a stretch ratio of similar to 4, the dark conductivity and the steady-state photoconductivity were both about 40 and 20 times higher with the electric field parallel to the average chain direction, respectively. However, the shape of the PC excitation spectrum was independent of field direction and did not show a significant rise in the ultraviolet, as is usually observed for measurements in the photodiode configuration. The implications of these results to the charge photogeneration mechanism in conjugated polymers are discussed.

Excitation spectrum for ultrafast photogeneration of charged solitons in polyacetylene

Ultrafast photoinduced absorption by infrared-active vibrational modes is used to detect charged solitons in oriented trans-polyacetylene. Soliton pairs are photogenerated within similar to250 fs with quantum efficiencies (phi(ch)) approaching unity. The excitation spectrum of phi(ch) shows an onset at similar to1.0 eV with a weak photon energy dependence up to 4.7 eV. The results are consistent with the ultrafast soliton formation predicted by Su and Schrieffer and with the Su-Scrieffer-Heeger threshold of 2E(g)/pi for soliton pair production. The recombination dynamics of charged solitons is very fast (initial decay<1 ps) with a modest dependence on the pump photon energy.

Excitation spectrum for ultrafast photogeneration of charged solitons in polyacetylene

Ultrafast photoinduced absorption by IRAV modes is used to detect charged solitons in oriented polyacetylene. We find that soliton pairs are photogenerated within our time resolution of similar to250 fs with similar to100% quantum efficiency (phi(ch)). The excitation spectrum of phi(ch) shows an onset at 1.0 eV, with a weak photon energy dependence up to 4.7 eV. These results agree with the ultrafast soliton formation predicted by Su and Schrieffer and with the SSH threshold of 2E(g)/pi for soliton pair production.

Differential cross sections for target excitation and positronium formation in positron-helium scattering

Positronium formation and target excitation in positron-helium scattering have been investigated using the close-coupling approximation with realistic wave functions for the positronium and helium atoms. The following eight states have been used in the close-coupling scheme: He(1s1s), He(1s2(1)s), He(1s2(1)p), He(1s3(1)s), He(1s3(1)p), Ps(1s), Ps(2s), and Ps(2p), where Ps stands for the positronium atom. Calculations are reported of differential cross sections for elastic scatering,, inelastic target excitation to He(1s2(1)s) and He(1s2(1)p) slates, and rearrangement transition to Ps(1s), Ps(2s), and Ps(2p) states for incident positron energies between 40 and 200 eV. The coincidence parameters for the transition to the He(1s2(1)p) state of helium are also reported and briefly discussed. [S1050-2947(98)05101-4].

Controlling Excitation Inversion of a Cooper Pair Box Interacting with a Nanomechanical Resonator

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Infrared-to-visible upconversion in Yb3+/Er3+ co-doped PbO-GeO2 glass with silver nanoparticles

Enhanced frequency upconversion (UC) emission was studied in Yb3+/Er3+ co-doped PbO-GeO2 glass containing silver nanoparticles (NPs). Optical excitation was achieved with a laser operating at 980 nm in resonance with the Yb3+ transition F-4(5/2)-> F-4(7/2). The intensity of the whole UC spectrum from 400 to 700 nm was intensified due to the influence of silver NPs. The green and red emissions were enhanced by more than 300%. Emission bands centered at 408 nm and 480 nm were also detected corresponding to the H-2(9/2)-> I-4(15/2) and F-4(7/2)-> I-4(15/2) transitions of Er3+ ion. An intensity enhancement of approximate to 150% due to the NPs was measured. For the first time the influence of silver NPs on the blue emission of Yb3+/Er3+ co-doped PbO-GeO2 glass is reported. The large enhancement in the whole UC spectrum is due to the increased local field in the Er3+ ions locations and the proximity between the luminescence wavelengths and the NPs surface plasmon resonance. (C) 2010 Elsevier B.V. All rights reserved.

Field profiles of bulk plasmon polariton modes in layered systems containing a metamaterial

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Growth of silver nano-particle embedded in tellurite glass: Interaction between localized surface plasmon resonance and Er3+ ions

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Luminescence of Tb(3+) doped TeO(2)-ZnO-Na(2)O-PbO glasses containing silver nanoparticles

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Localized surface plasmon resonance interaction with Er3+-doped tellurite glass

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Unfolding of plasmon-polariton modes in one-dimensional layered systems containing anisotropic left-handed materials

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Light and thermal excitation of depolarization current in indirect bandgap Alx Ga1-xAs

Monochromatic light excitation in conjunction with thermally stimulated depolarization current measurements are applied to indirect bandgap AlxGa1-xAs. The obtained average activation energy for dipole relaxation is in very close agreement with the DX center binding energy. Monochromatic light induces state transition in the defect and makes possible the identification of dipoles observed in the dark. Charge relaxation currents are destroyed by photoionization of Al0.5Ga0.5As using either 647 nm Kr+ or 488 nm Ar+ laser lines, which are above the DX center threshold photoionization energy. It suggests that correlation may exist among charged donor states DX--d+. Sample resistance as a function of temperature is also measured in the dark and under illumination and shows the probable X valley effective mass state participation in the electron trapping. Ionization with energies of 0.8 eV and 1.24 eV leads to striking current peak shifts in the thermally stimulated depolarization bands. Since vacancies are present in this material, they may be responsible for the secondary band observed in the dark as well as participation in the light induced recombination process.

Oxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sources

Since oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type conductivity. Since bandgap transitions are in the ultraviolet range, its photoconductivity is strongly dependent on the excitation source. We have measured variation of photoconductivity excitation with wavelength for tin dioxide grown by dip-coating sol-gel technique using several light sources: tungsten lamp, xenon, mercury and deuterium, and present selected results. The main band is obtained in the range 3-4eV according to light source spectrum in the ultraviolet range. The presence of oxygen in the cryostat also affects the spectrum since electron-hole pairs react with adsorbed oxygen specimens. © 1999 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.

Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films

Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.