Toppling Analysis of Precariously Balanced Rocks under Earthquake Excitation

Toppling analysis of a precariously balanced rock (PBR) can provide insights into the nature of ground motion that has not occurred at that location in the past and, by extension, realistic constraints on peak ground motions for use in engineering design. Earlier approaches have targeted simplistic 2-D models of the rock or modeled the rock-pedestal contact using spring-damper assemblies that require re-calibration for each rock. These analyses also assume that the rock does not slide on the pedestal. Here, a method to model PBRs in three dimensions is presented. The 3-D model is created from a point cloud of the rock, the pedestal, and their interface, obtained using Terrestrial Laser Scanning (TLS). The dynamic response of the model under earthquake excitation is simulated using a rigid body dynamics algorithm. The veracity of this approach is demonstrated by comparisons against data from shake table experiments. Fragility maps for toppling probability of the Echo Cliff PBR and the Pacifico PBR as a function of various ground motion parameters, rock-pedestal interface friction coefficient, and excitation direction are presented. The seismic hazard at these PBR locations is estimated using these maps. Additionally, these maps are used to assess whether the synthetic ground motions at these locations resulting from scenario earthquakes on the San Andreas Fault are realistic (toppling would indicate that the ground motions are unrealistically high).

Mesoscale Optoelectronic Design of Wire-Based Photovoltaic and Photoelectrochemical Devices

The overarching theme of this thesis is mesoscale optical and optoelectronic design of photovoltaic and photoelectrochemical devices. In a photovoltaic device, light absorption and charge carrier transport are coupled together on the mesoscale, and in a photoelectrochemical device, light absorption, charge carrier transport, catalysis, and solution species transport are all coupled together on the mesoscale. The work discussed herein demonstrates that simulation-based mesoscale optical and optoelectronic modeling can lead to detailed understanding of the operation and performance of these complex mesostructured devices, serve as a powerful tool for device optimization, and efficiently guide device design and experimental fabrication efforts. In-depth studies of two mesoscale wire-based device designs illustrate these principles—(i) an optoelectronic study of a tandem Si|WO3 microwire photoelectrochemical device, and (ii) an optical study of III-V nanowire arrays.

The study of the monolithic, tandem, Si|WO3 microwire photoelectrochemical device begins with development and validation of an optoelectronic model with experiment. This study capitalizes on synergy between experiment and simulation to demonstrate the model’s predictive power for extractable device voltage and light-limited current density. The developed model is then used to understand the limiting factors of the device and optimize its optoelectronic performance. The results of this work reveal that high fidelity modeling can facilitate unequivocal identification of limiting phenomena, such as parasitic absorption via excitation of a surface plasmon-polariton mode, and quick design optimization, achieving over a 300% enhancement in optoelectronic performance over a nominal design for this device architecture, which would be time-consuming and challenging to do via experiment.

The work on III-V nanowire arrays also starts as a collaboration of experiment and simulation aimed at gaining understanding of unprecedented, experimentally observed absorption enhancements in sparse arrays of vertically-oriented GaAs nanowires. To explain this resonant absorption in periodic arrays of high index semiconductor nanowires, a unified framework that combines a leaky waveguide theory perspective and that of photonic crystals supporting Bloch modes is developed in the context of silicon, using both analytic theory and electromagnetic simulations. This detailed theoretical understanding is then applied to a simulation-based optimization of light absorption in sparse arrays of GaAs nanowires. Near-unity absorption in sparse, 5% fill fraction arrays is demonstrated via tapering of nanowires and multiple wire radii in a single array. Finally, experimental efforts are presented towards fabrication of the optimized array geometries. A hybrid self-catalyzed and selective area MOCVD growth method is used to establish morphology control of GaP nanowire arrays. Similarly, morphology and pattern control of nanowires is demonstrated with ICP-RIE of InP. Optical characterization of the InP nanowire arrays gives proof of principle that tapering and multiple wire radii can lead to near-unity absorption in sparse arrays of InP nanowires.