Electronic structure and chemical bonding in the ground states of Tc(2) and Re(2)

Multiconfiguration second-order perturbation theory, including relativistic effects and spin-orbit coupling, has been employed to investigate the nature of the chemical bonding in the ground state of Tc(2) and Re(2). The Tc(2) ground state is found to be a 0(g)(+) state, with an effective bond order (EBO) of 4.4, and a dissociation energy of 3.25 eV. The Re(2) ground state is a 1(g) state, with EBO = 4.3. Almost degenerate to it, is a 0(g)(+) state (T(e) = 77 cm(-1)), with EBO = 4.1. Experimental evidence also indicates that the ground state is of 1(g) nature. The dissociation energy is computed to be 5.0 eV in agreement with an experimental estimate of 4 +/- 1 eV.

Análise do espalhamento espectral em superfícies de estruturas complexas para comunicações móveis

In this work, the transmission line method is explored on the study of the propagation phenomenon in nonhomogeneous walls with finite thickness. It is evaluated the efficiency and applicability of the method, considering materials like gypsum, wood and brick, found in the composition of the structures of walls in question. The results obtained in this work are compared to those available in the literature, for several particular cases. A good agreement is observed, showing that the performed analysis is accurate and efficient in modeling, for instance, the wave propagation through building walls and integrated circuit layers in mobile communication and radar system applications. Later, simulations of resistive sheets devices such as Salisbury screens and Jaumann absorbers and of transmission lines made of metal-insulator-semiconductor (MIS) are made. Thereafter, it is described a study on frequency surface selective structures (FSS). It is proposed the development of devices and microwave integrated circuits (MIC) of such structures, for the accomplishment of experiments. Finally, future works are suggested, for instance, on the development of reflectarrays, frequency selective surfaces with dissimilar elements, and coupled frequency selective surfaces with elements located on different layers

Electrical characterization of poly(amide-imide) for application in organic field effect devices

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Loss of superfluidity in a Bose-Einstein condensate via forced resonant oscillations

We predict the loss of superfluidity in a Bose-Einstein condensate in an axially symmetric harmonic trap alone during resonant collective oscillations via a classical dynamical transition. The forced resonant oscillation can be initiated by (a) periodic modulation of the atomic scattering length with a frequency that equals twice the radial trapping frequency or multiples thereof, or by (b) periodic modulation of the radial trapping potential with a frequency that equals the radial trapping frequency or multiples thereof. Suggestion for future experiment is made. (C) 2003 Elsevier B.V. B.V. All rights reserved.

The (CH3OH)-C-13 optically pumped far-infrared laser: New lines and frequency measurements

We report 18 new laser lines from (CH3OH)-C-13 generated in an optically pumped far-infrared laser; the laser lines are in the range of 54.2-420 mu m and are all characterized in wavelength, polarization relative to the pumping CO2 radiation, and pump offset relative to the CO2 center frequency, the frequencies of seven of these new lines along with 10 previously reported lines were measured by an accurate heterodyne technique, mixing them in a metal-insulator-metal (MIM) point contact diode, with another laser line of known frequency.

Thickness dependence of leakage current in BaBi2Ta2O9 thin films

BaBi2Ta2O9 thin films having a layered structure were fabricated by metalorganic solution deposition technique. The films exhibited good structural, dielectric, and insulating properties. The room temperature resistivity was found to be in the range of 10(12)-10(14) Omega cm up to 4 V corresponding to a field of 200 kV/cm across the capacitor for films annealed in the temperature range of 500-700 degrees C. The current-voltage (I-V) characteristics as a function of thickness for films annealed at 700 degrees C for 1 h, indicated bulk limited conduction and the log(I) vs V-1/2 characteristics suggested a space-charge-limited conduction mechanism. The capacitance-voltage measurements on films in a metal-insulator-semiconductor configuration indicated good Si/BaBi2Ta2O9 interface characteristics and a SiO2 thickness of similar to 5 nm was measured and calculated. (C) 1999 American Institute of Physics. [S0003-6951(99)00830-X].

Field-dependent conductivity at low electric fields in pressed pellets of doped poly (3-methylthiophene): evidence of charge-density wave depinning

Field-dependent conductivity at low electric fields was observed from low to room temperature in pressed pellets of doped poly(3-methylthiophene). The room temperature data showed good agreement with Bardeen's theory of charge-density wave depinning and the values of the parameters obtained are consistent with a strong electron-phonon interaction as expected for quasi-one dimensional systems. (C) 2003 Elsevier B.V. Ltd. All rights reserved.

Effects of thermal annealing on the semi-insulating properties of radio frequency magnetron sputtering-produced germanate thin films

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Determination of density of states in PPS from space-charge-limited current measurements

Space-charge-limited currents measurements have been carried out on undoped amorphous poly p-phenylene sulfide. The scaling law is checked for different samples with varying thickness, and J-V data analyzed. The position of the quasi-Fermi level and the density of states was obtained.

Estudo da fotocapacitância em dispositivos MIS orgânicos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Formação de filmes finos de Al2O3 por anodização e seu uso em dispositivos com filmes de Poli(3-Hexiltiofeno)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Dispositivos MIS à base de Ftalocianina e óxido de alumínio produzidos por impressão jato de tinta em substrato flexível

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Thermal inkjet printing of copper tetrasulfonated phthalocyanine (CuTsPc) as a semiconducting layer on flexible MIS capacitors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electrical and Mechanical Properties of Post-annealed SiC(x)N(y) Films

Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 degrees C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiC(x)N(y) films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiC(x)N(y) films.

Frequency measurements of CD3OH and (CH3OH)-C-13 optically pumped far-infrared laser lines

We report the frequency measurements of 18 optically pumped far-infrared (FIR) laser lines generated from CD3OH and (CH3OH)-C-13. We use the heterodyne technique of mixing FIR laser radiations and microwave radiation on a metal-insulator-metal point-contact tunnel diode to determine the FIR laser frequencies. Two FIR laser systems, consisting of CO2 waveguide pump lasers and Fabry-Perot FIR laser cavities, were used as optical sources. (C) 1997 Optical Society of America.