Using a semiconductor optical amplifier integrated with a pump laser for mid-span spectral inversion and wavelength conversion

A semiconductor optical amplifier monolithically integrated with a distributed feedback pump laser is used for non-degenerate four wave mixing applications. Experimental results are presented which illustrate the use of this compact device for both wavelength conversion and dispersion compensation applications at high data rates.

Corner effect and asymmetry in transonic channel flows

An experimental and numerical investigation into transonic shock/boundary-layer interactions in rectangular ducts has been performed. Experiments have shown that flow development in the corners of transonic shock/boundary-layer interactions in confined channels can have a significant impact on the entire flowfield. As shock strength is increased from M∞ = 1:3 to 1.5, the flowfield becomes very slightly asymmetrical. The interaction of corner flows with one another is thought to be a potential cause of this asymmetry. Thus, factors that govern the size of corner interactions (such as interaction strength) and their proximity to one another (such as tunnel aspect ratio) can affect flow symmetry. The results of the computational study show reasonable agreement with experiments, although simulations with particular turbulence models predict highly asymmetrical solutions for flows that were predominantly symmetrical in experiments. These discrepancies are attributed to the tendency of numerical schemes to overprediction corner-interaction size, and this also accounts for why computational fluid dynamics predicts the onset of asymmetry at lower shock strengths than in experiments. The findings of this study highlight the importance of making informed decisions about imposing artificial constraints on symmetry and boundary conditions for internal transonic flows. Future effort into modeling corner flows accurately is required. Copyright © 2011 by the American Institute of Aeronautics and Astronautics, Inc. All rights reserved.

Fish-Specific Duplicated dmrt2b Contributes to a Divergent Function through Hedgehog Pathway and Maintains Left-Right Asymmetry Establishment Function

Gene duplication is thought to provide raw material for functional divergence and innovation. Fish-specific dmrt2b has been identified as a duplicated gene of the dmrt2a/terra in fish genomes, but its function has remained unclear. Here we reveal that Dmrt2b knockdown zebrafish embryos display a downward tail curvature and have U-shaped somites. Then, we demonstrate that Dmrt2b contributes to a divergent function in somitogenesis through Hedgehog pathway, because Dmrt2b knockdown reduces target gene expression of Hedgehog signaling, and also impairs slow muscle development and neural tube patterning through Hedgehog signaling. Moreover, the Dmrt2b morphants display defects in heart and visceral organ asymmetry, and, some lateral-plate mesoderm (LPM) markers expressed in left side are randomized. Together, these data indicate that fish-specific duplicated dmrt2b contributes to a divergent function in somitogenesis through Hedgehog pathway and maintains the common function for left-right asymmetry establishment.

Correlations between electronic energy bands spin splitting and magnetic profile symmetry of magnetic superlattice

We have theoretically investigated the energy band structures of two typical magnetic superlattices formed by perpendicular or parallel magnetization ferromagnetic stripes periodically deposited on a two-dimensional electron gas (2DEG), where the magnetic profile in the perpendicular magnetization is of inversion anti-symmetry, but of inversion symmetry in parallel magnetization, respectively. We have shown that the energy bands of perpendicular magnetization display the spin-splitting and transverse wave-vector symmetry, while the energy bands of the parallel magnetization exhibit spin degeneration and transverse wave-vector asymmetry. These distinguishing spin-dependent and transverse wave-vector asymmetry features are essential for future spintronics devices applications. (c) 2008 Elsevier B.V. All rights reserved.

Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry

The well-width dependence of in-plane optical anisotropy (IPOA) in (001) GaAs/AlxGa1-xAs quantum wells induced by in-plane uniaxial strain and interface asymmetry has been studied comprehensively. Theoretical calculations show that the IPOA induced by in-plane uniaxial strain and interface asymmetry exhibits much different well-width dependence. The strain-induced IPOA is inversely proportional to the energy spacing between heavy- and light-hole subbands, so it increases with the well width. However, the interface-related IPOA is mainly determined by the probability that the heavy- and light-holes appear at the interfaces, so it decreases with the well width. Reflectance difference spectroscopy has been carried out to measure the IPOA of (001) GaAs/AlxGa1-xAs quantum wells with different well widths. Strain- and interface-induced IPOA have been distinguished by using a stress apparatus, and good agreement with the theoretical prediction is obtained. The anisotropic interface potential parameters are also determined. In addition, the energy shift between the interface- and strain-induced 1H1E reflectance difference (RD) structures, and the deviation of the 1L1E RD signal away from the prediction of the calculation model have been discussed.

Method for improving classification performance of neural network based on fuzzy input and network inversion

In order to effectively improve the classification performance of neural network, first architecture of fuzzy neural network with fuzzy input was proposed. Next a cost function of fuzzy outputs and non-fuzzy targets was defined. Then a learning algorithm from the cost function for adjusting weights was derived. And then the fuzzy neural network was inversed and fuzzified inversion algorithm was proposed. Finally, computer simulations on real-world pattern classification problems examine the effectives of the proposed approach. The experiment results show that the proposed approach has the merits of high learning efficiency, high classification accuracy and high generalization capability.

Asymmetry in the vertically aligned growth induced InAs islands in GaAs

A 10-InAs-island-layer vertically coupled quantum dot structure on (001) GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy. The result shows that the vertically aligned InAs islands are asymmetrical along the two < 110 > directions on the (001) growth plane. Such an asymmetry in the vertically coupled quantum dot structure can be explained with the chemical polarity in the III-V compound semiconductors.