Asymmetry in the vertically aligned growth induced InAs islands in GaAs
Data(s) |
1998
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Resumo |
A 10-InAs-island-layer vertically coupled quantum dot structure on (001) GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy. The result shows that the vertically aligned InAs islands are asymmetrical along the two < 110 > directions on the (001) growth plane. Such an asymmetry in the vertically coupled quantum dot structure can be explained with the chemical polarity in the III-V compound semiconductors. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Gong Q; Wu J; Xu B; Liang JB; Fan TW; Wang ZG; Bai YQ .Asymmetry in the vertically aligned growth induced InAs islands in GaAs ,CHINESE PHYSICS LETTERS,1998,15(7):519-521 |
Palavras-Chave | #半导体物理 #MOLECULAR-BEAM EPITAXY #QUANTUM DOTS #GAAS(100) #PHOTOLUMINESCENCE #STAGE |
Tipo |
期刊论文 |