Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures

We demonstrate that a controllable cracking can be realized in Si with a buried strain layer when hydrogen is introduced using traditional H-ion implantation techniques. However, H stimulated cracking is dependent on H projected ranges; cracking occurs along a Si0.8Ge0.2 strain layer only if the H projected range is shallower than the depth of the strained layer. The absence of cracking for H ranges deeper than the strain layer is attributed to ion-irradiation induced strain relaxation, which is confirmed by Rutherford-backscattering-spectrometry channeling angular scans. The study reveals the importance of strain in initializing continuous cracking with extremely low H concentrations.

Gas sensing of ruthenium implanted tungsten oxide thin films

Different amounts of Ru were implanted into thermally evaporated WO3 thin films by ion implantation. The films were subsequently annealed at 600oC for 2 hours in air to remove defects generated during the ion implantation. The Ru concentrations of four samples have been quantified by Rutherford Backscattering Spectrometry as 0.8, 5.5, 9 and 11.5 at%. The un-implanted WO3 films were highly porous but the porosity decreased significantly after ion implantation as observed by Transmission Electron Microscopy and Scanning Electron Microscopy. The thickness of the films also decreased with increasing Ru-ion dose, which is mainly due to densification of the porous films during ion implantation. From Raman spectroscopy two peaks at 408 and 451 cm-1 (in addition to the typical vibrational peaks of the monoclinic WO3 phase) associated with Ru were observed. Their intensity increased with increasing Ru concentration. X-Ray Photoelectron Spectroscopy showed a metallic state of Ru with binding energy of Ru 3d5/2 at 280.1 eV. This peak position remained almost unchanged with increasing Ru concentration. The resistances of the Ru-implanted films were found to increase in the presence of NO2 and NO with higher sensor response to NO2. The effect of Ru concentration on the sensing performance of the films was not explicitly observed due to reduced film thickness and porosity with increasing Ru concentration. However, the results indicate that the implantation of Ru into WO3 films with sufficient film porosity and film thickness can be beneficial for NO2 sensing at temperatures in the range of 250°C to 350°C.

Superhydrophobic amorphous carbon/carbon nanotube nanocomposites

Superhydrophobic amorphous carbon/carbon nanotube nanocomposites are fabricated by plasma immersion ion implantation with carbon nanotube forests as a template. The microstructure of the fabricated nanocomposites shows arrays of carbon nanotubes capped with amorphous carbon nanoparticles. Contact angle measurements show that both advancing and receding angles close to 180° can be achieved on the nanocomposites. The fabrication here does not require patterning of carbon nanotubes or deposition of conformal coatings with low surface energy, which are usually involved in conventional approaches for superhydrophobic surfaces. The relationship between the observed superhydrophobicity and the unique microstructure of the nanocomposites is discussed. © 2009 American Institute of Physics.

Strontium diffusion in feldspars—a laboratory study

Sr90 Radiotracer diffusion studies have been carried out on crystals of orthoclase and microcline using an ion implantation method. The activation energies are consistent with calculations based on mineral age data.

Diffusion of Be, Co and Mn impurities in compound semiconductors and glassy carbon studied by the modified radiotracer technique

The main method of modifying properties of semiconductors is to introduce small amount of impurities inside the material. This is used to control magnetic and optical properties of materials and to realize p- and n-type semiconductors out of intrinsic material in order to manufacture fundamental components such as diodes. As diffusion can be described as random mixing of material due to thermal movement of atoms, it is essential to know the diffusion behavior of the impurities in order to manufacture working components. In modified radiotracer technique diffusion is studied using radioactive isotopes of elements as tracers. The technique is called modified as atoms are deployed inside the material by ion beam implantation. With ion implantation, a distinct distribution of impurities can be deployed inside the sample surface with good con- trol over the amount of implanted atoms. As electromagnetic radiation and other nuclear decay products emitted by radioactive materials can be easily detected, only very low amount of impurities can be used. This makes it possible to study diffusion in pure materials without essentially modifying the initial properties by doping. In this thesis a modified radiotracer technique is used to study the diffusion of beryllium in GaN, ZnO, SiGe and glassy carbon. GaN, ZnO and SiGe are of great interest to the semiconductor industry and beryllium as a small and possibly rapid dopant hasn t been studied previously using the technique. Glassy carbon has been added to demonstrate the feasibility of the technique. In addition, the diffusion of magnetic impurities, Mn and Co, has been studied in GaAs and ZnO (respectively) with spintronic applications in mind.

Thin Film Strain Gauges--an Overview

This review gives a brief description of the historical development followed by the origin and the principle of operation of strain gauges. The features of an ideal strain gauge for measurement purposes and the general classes of strain gauges are given. The remaning part is devoted to an important development in strain gauge technology, namely thin film strain gauges. After highlighting the advantages of thin film strain gauges, a review of current data is given. Detailed description of metallic thin film strain gauges is provided and avaliable information on alloy semiconductor and cermet films for their possible use as strain gauge elements has also been included. The importance of ion implantation in tailoring the properties of strain gauges is highlighted. 33 ref.--AA

Irradiation effects in graphene and related materials

Nanomaterials with a hexagonally ordered atomic structure, e.g., graphene, carbon and boron nitride nanotubes, and white graphene (a monolayer of hexagonal boron nitride) possess many impressive properties. For example, the mechanical stiffness and strength of these materials are unprecedented. Also, the extraordinary electronic properties of graphene and carbon nanotubes suggest that these materials may serve as building blocks of next generation electronics. However, the properties of pristine materials are not always what is needed in applications, but careful manipulation of their atomic structure, e.g., via particle irradiation can be used to tailor the properties. On the other hand, inadvertently introduced defects can deteriorate the useful properties of these materials in radiation hostile environments, such as outer space. In this thesis, defect production via energetic particle bombardment in the aforementioned materials is investigated. The effects of ion irradiation on multi-walled carbon and boron nitride nanotubes are studied experimentally by first conducting controlled irradiation treatments of the samples using an ion accelerator and subsequently characterizing the induced changes by transmission electron microscopy and Raman spectroscopy. The usefulness of the characterization methods is critically evaluated and a damage grading scale is proposed, based on transmission electron microscopy images. Theoretical predictions are made on defect production in graphene and white graphene under particle bombardment. A stochastic model based on first-principles molecular dynamics simulations is used together with electron irradiation experiments for understanding the formation of peculiar triangular defect structures in white graphene. An extensive set of classical molecular dynamics simulations is conducted, in order to study defect production under ion irradiation in graphene and white graphene. In the experimental studies the response of carbon and boron nitride multi-walled nanotubes to irradiation with a wide range of ion types, energies and fluences is explored. The stabilities of these structures under ion irradiation are investigated, as well as the issue of how the mechanism of energy transfer affects the irradiation-induced damage. An irradiation fluence of 5.5x10^15 ions/cm^2 with 40 keV Ar+ ions is established to be sufficient to amorphize a multi-walled nanotube. In the case of 350 keV He+ ion irradiation, where most of the energy transfer happens through inelastic collisions between the ion and the target electrons, an irradiation fluence of 1.4x10^17 ions/cm^2 heavily damages carbon nanotubes, whereas a larger irradiation fluence of 1.2x10^18 ions/cm^2 leaves a boron nitride nanotube in much better condition, indicating that carbon nanotubes might be more susceptible to damage via electronic excitations than their boron nitride counterparts. An elevated temperature was discovered to considerably reduce the accumulated damage created by energetic ions in both carbon and boron nitride nanotubes, attributed to enhanced defect mobility and efficient recombination at high temperatures. Additionally, cobalt nanorods encapsulated inside multi-walled carbon nanotubes were observed to transform into spherical nanoparticles after ion irradiation at an elevated temperature, which can be explained by the inverse Ostwald ripening effect. The simulation studies on ion irradiation of the hexagonal monolayers yielded quantitative estimates on types and abundances of defects produced within a large range of irradiation parameters. He, Ne, Ar, Kr, Xe, and Ga ions were considered in the simulations with kinetic energies ranging from 35 eV to 10 MeV, and the role of the angle of incidence of the ions was studied in detail. A stochastic model was developed for utilizing the large amount of data produced by the molecular dynamics simulations. It was discovered that a high degree of selectivity over the types and abundances of defects can be achieved by carefully selecting the irradiation parameters, which can be of great use when precise pattering of graphene or white graphene using focused ion beams is planned.

Impurity diffusion in bismuth single-crystals

Measurements of impurity diffusion of 86Rb, 90Sr, 133Ba, and 137Cs in single crystal Bi were carried out. Diffusion samples were prepared from single crystal Bi by ion implantation. About 1012-1013 ions were implanted, resulting in surface activities approx =104 cpm. After implantation, specimens were annealed for specified times at 220-265 deg C, and tracer penetration profiles were determined by an electrolytic method. A typical penetration profile for 137Cs in Bi showed a linear relationship for log C vs x in with Fick's law for volume diffusion. Laws of grain boundary diffusion were not obeyed and the order of magnitude of the penetration distances was much less than on a grain boundary mechanism. Results were interpreted in terms of a modified Fischer analysis using a kinetic trapping term. Effective half lengths for trapping at a twin boundary were determined for each impurity.

Numerical simulation of nano-indentation on rough surfaces

Nano-indentation is a technique used to measure various mechanical properties like hardness, Young's modulus and the adherence of thin films and surface layers. It can be used as a quality control tool for various surface modification techniques like ion-implantation, film deposition processes etc. It is important to characterise the increasing scatter in the data measured at lower penetration depths observed in the nano-indentation, for the technique to be effectively applied. Surface roughness is one of the parameters contributing for the scatter. This paper is aimed at quantifying the nature and the amount of scatter that will be introduced in the measurement due to the roughness of the surface on which the indentation is carried out. For this the surface is simulated using the Weierstrass-Mandelbrot function which gives a self-affine fractal. The contact area of this surface with a conical indenter with a spherical cap at the tip is measured numerically. The indentation process is simulated using the spherical cavity model. This eliminates the indentation size effect observed at the micron and sub-micron scales. It has been observed that there exists a definite penetration depth in relation to the surface roughness beyond which the scatter is reduced such that reliable data could be obtained.

Spin wave resonance in ferromagnetic films

The objective of this investigation has been a theoretical and experimental understanding of ferromagnetic resonance phenomena in ferromagnetic thin films, and a consequent understanding of several important physical properties of these films. Significant results have been obtained by ferromagnetic resonance, hysteresis, torque magnetometer, He ion backscattering, and X-ray fluorescence measurements for nickel-iron alloy films.

Taking into account all relevant magnetic fields, including the applied, demagnetizing, effective anisotropy and exchange fields, the spin wave resonance condition applicable to the thin film geometry is presented. On the basis of the simple exchange interaction model it is concluded that the normal resonance modes of an ideal film are expected to be unpinned. The possibility of nonideality near the surface of a real film was considered by means of surface anisotropy field, inhomogeneity in demagnetizing field and inhomogeneity of magnetization models. Numerical results obtained for reasonable parameters in all cases show that they negligibly perturb the resonance fields and the higher order mode shapes from those of the unpinned modes of ideal films for thicknesses greater than 1000 Å. On the other hand for films thinner than 1000 Å the resonance field deviations can be significant even though the modes are very nearly unpinned. A previously unnoticed but important feature of all three models is that the interpretation of the first resonance mode as the uniform mode of an ideal film allows an accurate measurement of the average effective demagnetizing field over the film volume. Furthermore, it is demonstrated that it is possible to choose parameters which give indistinguishable predictions for all three models, making it difficult to uniquely ascertain the source of spin pinning in real films from resonance measurements alone.

Spin wave resonance measurements of 81% Ni-19% Fe coevaporated films 30 to 9000 Å thick, at frequencies from 1 to 8 GHz, at room temperature, and with the static magnetic field parallel and perpendicular to the film plane have been performed. A self-consistent analysis of the results for films thicker than 1000 Å, in which multiple excitations can be observed, shows for the first time that a unique value of exchange constant A can only be obtained by the use of unpinned mode assignments. This evidence and the resonance behavior of films thinner than 1000 Å strongly imply that the magnetization at the surfaces of permalloy films is very weakly pinned. However, resonance measurements alone cannot determine whether this pinning is due to a surface anisotropy, an inhomogeneous demagnetizing field or an inhomogeneous magnetization. The above analysis yields a value of 4πM=10,100 Oe and A = (1.03 ± .05) x 10^-6 erg/cm for this alloy. The ability to obtain a unique value of A suggests that spin wave resonance can be used to accurately characterize the exchange interaction in a ferromagnet.

In an effort to resolve the ambiguity of the source of pinning of the magnetization, a correlation of the ratio of magnetic moment and X-ray film thickness with the value of effective demagnetizing field 4πNM as determined from resonance, for films 45 to 300 Å has been performed. The remarkable agreement of both quantities and a comparison with the predictions of five distinct models, strongly imply that the thickness dependence of both quantities is related to a thickness dependent average saturation magnetization, which is far below 10,100 Oe for very thin films. However, a series of complementary experiments shows that this large decrease of average saturation magnetization cannot be simply explained by either oxidation or interdiffusion processes. It can only be satisfactorily explained by an intrinsic decrease of the average saturation magnetization for very thin films, an effect which cannot be justified by any simple physical considerations.

Recognizing that this decrease of average saturation magnetization could be due to an oxidation process, a correlation of resonance measurements, He ion backscattering, X-ray fluorescence and torque magnetometer measurements, for films 40 to 3500 Å thick has been performed. On basis of these measurements it is unambiguously established that the oxide layer on the surface of purposefully oxidized 81% Ni-19% Fe evaporated films is predominantly Fe-oxide, and that in the oxidation process Fe atoms are removed from the bulk of the film to depths of thousands of angstroms. Extrapolation of results for pure Fe films indicates that the oxide is most likely α-Fe₂O₃. These conclusions are in agreement with results from old metallurgical studies of high temperature oxidation of bulk Fe and Ni-Fe alloys. However, X-ray fluorescence results for films oxidized at room temperature, show that although the preferential oxidation of Fe also takes place in these films, the extent of this process is by far too small to explain the large variation of their average saturation magnetization with film thickness.

向日葵 (Helianthus annuus L.) 种质资源相关的基础研究

向日葵原产自北美,通过人工培育,形成了具有不同遗传多态性的品种,是一种集观赏、药用、食用、油用于一体，经济价值很高的资源植物。前人已经利用传统育种、辐射育种以及现代生物技术手段对向日葵种质资源的开发和保护进行了深入研究，这也加速了向日葵新品种的选育。随着离子注入等新型辐射方式的出现，离子注入对向日葵的诱变育种研究逐渐成为向日葵新品种选育的一个新增长点。另外，作为世界四大油料作物之一，向日葵种子老化问题一直存在于向日葵种质资源保存过程。向日葵种子作为向日葵的主要物质储存库，除了含有丰富的油、脂肪酸外，还含有丰富的维生素E资源。提高向日葵种子维生素E含量可以延长向日葵种子保存时间，也可以提高向日葵的经济价值。本文以向日葵种子为实验材料，分别用蛋白质组学的方法和生理方法对N+注入后向日葵种子、人工衰老向日葵种子以及向日葵种子成熟过程中维生素E代谢进行了初步分析。 对N+注入后向日葵种子蛋白质组变异研究发现，对照种子蛋白中的No.29特异蛋白与MADS盒转录因子HAM59有23.48%的匹配率;处理种子中的No.279特异蛋白与亮氨酸拉链蛋白的同源蛋白HAHB-4有23.20%的匹配率。说明离子注入能引起向日葵种胚蛋白质组水平上的变异，以期对离子注入的诱变机制进行初步探讨，为进一步探讨离子注入对于DNA及蛋白质的是否存在诱变热点提供一些初步的证据。 种子在高温和高含水量情况下曝露数天诱发的加速衰老比一般衰老引起更多的生化分解;另一方面，在长期贮存条件下的低温贮存环境和种子低含水量可能使种子处于玻璃态。种子胞质的极高粘度和低分子运动能够阻止或抑制很多有害过程。尽管种子衰老的生理机制已有大量研究，但衰老过程中的主要过程和相互作用仍未完全清楚。本文报道向日葵种子在较宽范围的含水量和温度条件下的脂过氧化、非酶蛋白糖基化对种子衰老的影响;同时，对种子玻璃态在长期贮存中对生化分解的阻滞作用并由此延长种子存活力也进行了探讨;与此同时我们借用蛋白质组学手段对加速老化的向日葵种子进行蛋白质组变异分析，结果发现随着老化程度的加深，出现部分蛋白含量随之增加，同时老化速率随之下降。通过质谱鉴定发现其中两个蛋白分别与resistance gene analog NBS4和 NBS5具有一定的同源性。因此我们推测，在加速老化过程中，亦可出现一些延缓老化的蛋白质，同时这些蛋白的出现是否标志着加速老化过程中也存在“玻璃态”有待于进一步的证实。 另外，我们以20份向日葵种质资源为实验材料，通过对维生素E含量、含油率、皮壳率以及百粒重的测定及统计分析，试图了解向日葵种质资源中维生素E含量变异及相关数据。结果表明，在20份向日葵种质资源中，油葵的维生素E含量和含油率明显高于食葵;含油率与维生素E含量在0.01水平呈极显著正相关，含油率与百粒重在0.05水平呈显著负相关;百粒重与皮壳率在0.01水平呈极显著负相关。通过初步评价，发现3份富含天然维生素E的向日葵种质。为了提高向日葵种子中维生素E含量，我们对向日葵胚胎发育过程中维生素E的积累以及短时高温对维生素E代谢的影响做了分析。我们发现，生育酚含量在开花后12到33天期间呈线性增长，并于33天后基本达到最大值，直至种子成熟。在上述生育酚增长期，我们将以每7天作为一个时间单位，对向日葵种胚发育过程进行高温处理。我们发现，高温对维生素E积累具有明显的刺激作用（以干重为基础）。但是由于在开花后12到19天之内高温处理会极大的影响干重的增加，因此当温度超过35℃时，生育酚总量还是大大下降的。然而，35℃的高温在向日葵开花后12到19天内并没有影响种胚的干重，而大大提高了单粒种子中的生育酚含量。因此，这些结果说明，我们可以调整播种时间提高向日葵中生育酚的含量，从而提高向日葵油的品质和向日葵种质的价值。

Enhancement of room temperature sub-bandgap light emission from silicon photonic crystal nanocavity by Purcell effect

We report the enhancement of sub-bandgap photoluminescence from silicon via the Purcell effect. We couple the defect emission from silicon, which is believed to be due to hydrogen incorporation into the lattice, to a photonic crystal (PhC) nanocavity. We observe an up to 300-fold enhancement of the emission at room temperature at 1550 nm, as compared to an unpatterned sample, which is then comparable to the silicon band-edge emission. We discuss the possibility of enhancing this emission even further by introducing additional defects by ion implantation, or by treating the silicon PhC nanocavity with hydrogen plasma. © 2011 Elsevier B.V.

Comment on

In a recent letter, Hsieh reported the growth of high-quality Ge epilayers with a SiGe buffer thickness of only 0.45 mu m, a surface root-mean-square roughness of less than 0.4 nm, and a threading dislocation of 7.6 x 10(6) cm(-2) on Si+ pre-ion-implantation Si substrate utilizing of strain relaxation enhancement by point defects and interface blocking of the dislocations. Our comment has focused on x-ray diffraction data shown in Fig. 3 of Ref. 1. We demonstrate that the strain in Ge epilayers is tensile, rather than compressive as misunderstood by the authors. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3003873]

An evidence of defect gettering in GaN

The effect of Neon ion implantation on the structural and optical properties of MOCVD grown GaN was studied. X-ray diffraction and low temperature photoluminescence measurements were carried out on the implanted samples annealed at 900 degrees C. The peak at 3.41 eV exhibited an interesting behavior in as-grown and the implanted samples. Annealing has enhanced the intensity of this peak in as-grown samples, but suppressed in all the implanted samples. Capturing of defects by cavities during gettering process is interpreted as the reason for the observed behavior of this luminescence peak. Implantation dose of 5 x 10(15) ions/cm(2) caused the complete quenching of yellow band luminescence. (C) 2008 Elsevier B.V. All rights reserved.