Separation of potential and kinetic electron emission from Si and W induced by multiply charged neon and argon ions

T he total secondary electron emission yields, gamma(T), induced by impact of the fast ions Neq+ (q = 2-8) and Arq+ (q = 3-12) on Si and Neq+ (q = 2-8) on W targets have been measured. It was observed that for a given impact energy, gamma(T) increases with the charge of projectile ion. By plotting gamma(T) as a function of the total potential energy of the respective ion, true kinetic and potential electron yields have been obtained. Potential electron yield was proportional to the total potential energy of the projectile ion. However, decrease in potential electron yield with increasing kinetic energy of Neq+ impact on Si and W was observed. This decrease in potential electron yield with kinetic energy of the ion was more pronounced for the projectile ions having higher charge states. Moreover, kinetic electron yield to energy-loss ratio for various ion-target combinations was calculated and results were in good agreement with semi-empirical model for kinetic electron emission.

The electron emission yield induced by the interaction of highly charged argon ions with silicon surface

The electron emission yield of the interaction of highly charged argon ions with silicon surface is reported. The experiment was done at the Atomic Physics Research Platform on the Electron Cyclotron Resonance (ECR) Ion Source of the National Laboratory HIRFL (Heavy Ion Research Facility in Lanzhou). In the experiment, the potential energy and kinetic energy was selected by varying the projectile charge states and extracting voltage, thus the contributions of the projectile potential energy deposition and electronic energy loss in the solid are extensively investigated. The results show that, the two main factors leading to surface electron emission, namely the potential energy deposition and the electronic energy loss, are both approximately proportional to the electron emission yield per ion.

First results of SECRAL at 18GHz for intense beam production of highly charged ions

A Superconducting ECR ion source with Advanced design in Lanzhou (SECRAL) was successfully built to produce intense beams of highly charged ions for Heavy Ion Research Facility in Lanzhou (HIRFL). The ion source has been optimized to be operated at 28GHz for its maximum performance. The superconducting magnet confinement configuration of the ion source consists of three axial solenoid coils and six sextupole coils with a cold iron structure as field booster and clamping. For 28GHz operation, the magnet assembly can produce peak mirror fields on axis 3.6T at injection, 2.2T at extraction and a radial sextupole field of 2.0T at plasma chamber wall. A unique feature of SECRAL is that the three axial solenoid coils are located inside of the sextupole bore in order to reduce the interaction forces between the sextupole coils and the solenoid coils. During the ongoing commissioning phase at 18GHz with a stainless steel chamber, tests with various gases and some metals have been conducted with microwave power less than 3.2kW and it turned out the performance is very promising. Some record ion beam intensities have been produced, for instance, 810e mu A of O7+, 505e mu A of Xe20+, 306e mu A of Xe27+, 21e mu A of Xe34+, 2.4e mu A of Xe38+ and so on. To reach better results for highly charged ion beams, further modifications such as an aluminium chamber with better cooling, higher microwave power and a movable extraction system will be done, and also emittance measurements are being prepared.

X-ray emission of hollow atoms formed by highly charged argon and xenon ions below a beryllium surface

The X-ray emission induced by highly charged argon and xenon ions impinging on a beryllium surface is investigated. It is found that spectra of the X-ray induced by Ar-17,Ar-18+ interacting with the surface are very different from those of the X-ray induced by Ar-17,Ar-18+ interacting with residual gases. The result provides an experimental evidence for the existence of hollow atoms below the surface. Several unexpected X-ray lines are also found in the experiment. Firstly, K X-rays are observed when Ar16+ ions which initially have no K shell holes interact with the surface. Secondly, if there are more than 2 M shell vacancies at the initial time, strong M alpha alpha two-electron-one-photon (TEOP) transitions are found in the collisions of Xe-28+,Xe-29+,Xe-30+ ions with the surface.

K-shell ionization cross section of aluminium induced by low-energy highly charged argon ions

Al K-shell X-ray yields are measured with highly charged Arq+ ions (q = 12-16) bombarding against aluminium. The energy range of the Ar ions is from 180 to 380 keV. K-shell ionization cross sections of aluminium are also obtained from the yields data. The experimental data is explained within the framework of 2p pi-2p sigma s rotational coupling. When Ar ions with 2p-shell vacancies are incident on aluminium, the vacancies begin to reduce. Meanwhile, collisions against Al atoms lead to the production of new 2p-shell vacancies of Ar ions. These Ar 2p-shell vacancies will transfer to the 1s orbit of an Al atom via 2p pi-2p sigma s rotational coupling leading to the emission of a K-shell X-ray of aluminiun. A model is constructed based on the base of the above physical scenario. The calculation results of the model are in agreement with the experimental results.

Correlation between initial chromatid damage and survival of various cell lines exposed to heavy charged particles

The biophysical characteristics of heavy ions make them a rational source of radiation for use in radiotherapy of malignant tumours. Prior to radiotherapy treatment, a therapeutic regimen must be precisely defined, and during this stage information on individual patient radiosensitivity would be of very great medical value. There are various methods to predict radiosensitivity, but some shortfalls are difficult to avoid. The present study investigated the induction of chromatid breaks in five different cell lines, including one normal liver cell line (L02), exposed to carbon ions accelerated by the heavy ion research facility in Lanzhou (HIRFL), using chemically induced premature chromosome condensation (PCC). Previous studies have reported the number of chromatid breaks to be linearly related to the radiation dose, but the relationship between cell survival and chromatid breaks is not clear. The major result of the present study is that cellular radiosensitivity, as measured by D-0, is linearly correlated with the frequency of chromatid breaks per Gy in these five cell lines. We propose that PCC may be applied to predict radiosensitivity of tumour cells exposed to heavy ions.

X-ray spectra induced in highly charged Ar-40(q+) interacting with Au surface

By use of optical spectrum technology, the spectra of X-ray induced by highly charged Ar-40(q+) ions interacting with Au surface have been studied. The results show that the argon K alpha X-ray were emitted from the hollow atoms formed below the surface. There is a process of multi-electron exciting in neutralization of the Ar16+ ion, with electronic configuration 1s(2) in its ground state below the solid surface. The yield of the projectile K alpha X-ray is related to its initial electronic configuration, and the yield of the target X-ray is related to the projectile kinetic energy.

Electron emission induced by the interaction of highly charged ions Pb-207(q+) (24 <= q <= 36) with solid surface of Si(110)

The electron emission induced by highly charged ions Pb-207(q+) (24 <= q <= 36) interacting with Si(110) surface is reported. The result shows that the electron emission yield Y has a strong dependence on the projectile charge state q, incidence angle psi and impact energy E. In fitting the experimental data we found a nearly 1/tan psi dependence of Y. Theoretical analysis shows that these processes are closely related to the process of potential electron emission based on the classical over-the-barrier model.

Intense beam production of highly charged heavy ions by the superconducting electron cyclotron resonance ion source SECRAL (invited)

There has been increasing demand to provide higher beam intensity and high enough beam energy for heavy ion accelerator and some other applications, which has driven electron cyclotron resonance (ECR) ion source to produce higher charge state ions with higher beam intensity. One of development trends for highly charged ECR ion source is to build new generation ECR sources by utilization of superconducting magnet technology. SECRAL (superconducting ECR ion source with advanced design in Lanzhou) was successfully built to produce intense beams of highly charged ion for Heavy Ion Research Facility in Lanzhou (HIRFL). The ion source has been optimized to be operated at 28 GHz for its maximum performance. The superconducting magnet confinement configuration of the ion source consists of three axial solenoid coils and six sextupole coils with a cold iron structure as field booster and clamping. An innovative design of SECRAL is that the three axial solenoid coils are located inside of the sextupole bore in order to reduce the interaction forces between the sextupole coils and the solenoid coils. For 28 GHz operation, the magnet assembly can produce peak mirror fields on axis of 3.6 T at injection, 2.2 T at extraction, and a radial sextupole field of 2.0 T at plasma chamber wall. During the commissioning phase at 18 GHz with a stainless steel chamber, tests with various gases and some metals have been conducted with microwave power less than 3.5 kW by two 18 GHz rf generators. It demonstrates the performance is very promising. Some record ion beam intensities have been produced, for instance, 810 e mu A of O7+, 505 e mu A of Xe20+ 306 e mu A of Xe27+, and so on. The effect of the magnetic field configuration on the ion source performance has been studied experimentally. SECRAL has been put into operation to provide highly charged ion beams for HIRFL facility since May 2007.

Theoretical study on electron impact excitation of highly charged Ne-like ions

The electron impact excitation (EIE) cross sections from the ground state to all of the 2s(2)2p(5)3l and 2s2p(6)3l(l=s, p, d) states along the Ne-like isoelectronic sequence of ions (Z = 50-57) have been calculated by using the multiconfiguration Dirac-Fock package GRASP92 and the fully relativistic distorted-wave program REIE06. In the calculations, the relativistic effects and electron correlation effects are considered systematically. Based on those calculations, the EIE cross sections along the Ne-like isoelectronic sequence of ions for different incident electron energies are discussed, and some important conclusions are drawn. We also study the influence of the correlation effects on the values of the 3C/3D line-intensity ratio [3C: (2p(1/2)3d(3/2))(1) -> 2s(2)2p(6) S-1(0), 3D: (2p(3/2)3d(5/2))(1) -> 2s(2)2p(6) S-1(0)] along the Ne-like sequence. A comparison is made between the present results and previous theoretical calculations and experimental results for the EIE cross sections in Ba-46 (+) ions, and a good agreement is obtained.

Slow highly charged ions induced electron emission from clean Si surfaces

The electron emission yields from the interaction of slow highly charged ions (SHCI) He2+, O2+ and Ne2+ with clean Si surface are measured separately. It is found that electron emission yield gamma increases proportionally to projectile kinetic energy E-p/M-p, ranging from 0.75 keV/u to 10.5 keV/u (i.e. 3.8 x 10(5) m/s <= v(p) <= 1.42 x 10(6) m/s), and it is higher for heavy ions (O2+ and Ne2+) than for light ion (He2+). For O2+ and Ne2+, gamma increases with Z(p) decreasing in our energy range, and it shows quite different from the result for higher projectile kinetic energy. After calculating the stopping power by using TRIM 2006, it is found that the fraction of secondary electrons induced by recoil atoms increases significantly at lower projectile energy, thereby leads to the differences in gamma for heavy ions O2+ and Ne2+ between lower and higher projectile kinetic energy.

反冲原子对低速离子轰击Si表面时电子发射产额的影响；Slow highly charged ions induced electron emission from clean Si surfaces

在兰州重离子加速器国家实验室电子回旋共振离子源高电荷态原子物理实验平台上,用低能(0.75keV/u≤EP/MP≤10.5keV/u,即3.8×105m/s≤vP≤1.42×106m/s)He2+,O2+和Ne2+离子束正入射到自清洁Si表面时二次电子发射产额的实验结果.结果表明电子发射产额γ近似正比于入射离子动能EP/MP.在相同动能下,γ(O)>γ(Ne)>γ(He),对于原子序数ZP比较大的O2+和Ne2+离子,ZP大者反而γ小,这与较高入射能量时的结果截然不同.通过计算不同入射能量下入射离子的阻止能损S,发现反冲原子对激发二次电子的作用随入射离子能量的降低显著增大,这正是导致在较低能量范围内二次电子发射产额与较高入射能量时存在差异的主要原因.

低速高电荷态重离子在C_(60)薄膜中引起的势效应研究；Studies of Slow Highly-charged Ion Irradiated C_(60) Films

为了研究低速高电荷态离子在C60薄膜中引起的势效应,用能量为200keV的高电荷态Xen+(n=3,10,13,15,17,20,22,23)离子辐照了C60薄膜。用原子力显微镜(AFM)和Raman散射技术分析了辐照过程中高电荷态Xen+离子所储存势能在C60薄膜中引起的效应,即势效应。AFM分析结果表明,辐照C60薄膜的表面粗糙度随辐照Xen+离子电荷态(即势能)的增加而减小,揭示了势效应的存在。而Raman分析结果表明,由于Xe离子的动能远大于其所储存的势能,因此,尽管有表面势效应的影响,但在Raman分析的深度范围内,弹性碰撞还是主导了C60薄膜的损伤过程。

X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

We utilize slow highly charged ions of Xeq+ and Pbq+ to irradiate GaN crystal films grown on sapphire substrate, and use X-ray photoelectron spectroscopy to analyze its surface chemical composition and chemical state of the elements. The results show that highly charged ions can etch the sample surface obviously, and the GaN sample irradiated by highly charged ions has N depletion or is Ga rich on its surface. Besides, the relative content of Ga-Ga bond increases as the dose and charge state of the incident ions increase. In addition, the binding energy of Ga 3d(5/2) electrons corresponding to Ga-Ga bond of the irradiated GaN sample is smaller compared with that of the Ga bulk material. This can be attributed to the lattice damage, which shifts the binding energy of inner orbital electrons to the lower end.

低速高电荷态重离子辐照的GaN晶体表面X射线光电子能谱研究；X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

利用低速高电荷态Xeq+和Pbq+离子对在蓝宝石衬底上生长的GaN晶体膜样品进行辐照,并利用X射线光电子能谱(XPS)对样品表面化学组成和元素化合态进行了分析.结果表明,高电荷态离子对样品表面有显著的刻蚀作用;经高电荷态离子辐照的GaN样品表面氮元素贫乏而镓元素富集;随着入射离子剂量和所携带电荷数的增大,Ga—Ga键相对含量增大;辐照后,GaN样品中Ga—Ga键对应的Ga3d5/2电子的束缚能偏小,晶格损伤使内层轨道电子束缚能向低端方向偏移.