SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers

Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an 'inter-mixing layer" at the SiO2/Ta interface due to a thermodynamically favorable reaction: 15 SiO2 + 37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.

Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) A substrate

We report the structural and optical characteristics of InAs quantum dots (QDs) grown on GaAs (311)A substrates. Atomic force microscopic result shows that QDs on (311)A surface exhibit a nonconventional, faceted, arrowhead-like shapes aligned in the [233] direction. The photoluminescence (PL) intensity, peak position and the full width at half maxinum (FWHM) are all closely related to the measurement temperature. The fast redshift of PL energy and monotonous decrease of linewidth with increasing temperature were observed and explained by carriers being thermally activated to the barrier produced by the wetting layer and then being retrapped and recombined in energetically lower-lying QDs states. This model explains our results well.

玉米根系吸水能力细胞水平的杂种优势

在人工气候室水培条件下,以玉米(ZeamaysL.)杂交种F1代户单4号及其母本天四和父本478为材料,用细胞压力探针技术研究了正常供水和PEG-6000模拟–0.2MPa水分胁迫条件下,玉米根皮层细胞水分关系参数的基因型差异。结果表明,根皮层细胞的直径、长度和体积均为F1代>母本>父本;正常供水条件下3个玉米品种的根皮层细胞膨压均在0.6MPa左右且品种间差异不显著,水分胁迫抑制了细胞的延伸生长且F1代和母本的细胞膨压显著高于父本;根皮层细胞壁体积弹性模量均为父本>母本>F1代,水分胁迫条件下的品种间差异显著;与正常供水条件相比,水分胁迫条件下细胞膨压显著降低,而弹性模量则大幅度提高;在两种水分条件下,水分跨细胞膜运转的半时间均为父本>母本>F1代,且半时间在水分胁迫条件下均显著高于正常供水条件下;HgCl2处理引起了半时间的延长,2-巯基乙醇则部分逆转了HgCl2的效应;在两种水分条件下,根皮层细胞水导均为F1代>母本>父本且品种间差异显著,水分胁迫则显著降低了细胞水导。试验证明杂交种F1代的细胞水平根系吸水能力优于亲本,体现了杂种优势。

Exciton states in isolated quantum wires

The exciton states in isolated and semi-isolated quantum wires are studied. It is found that the image charges have a large effect on the effective Coulomb potential in wires. For the isolated wire the effective potential approaches the Coulomb potential in vacuum at large z distance. For the semi-isolated wire the effective potential is intermediate between the Coulomb potential in vacuum and the screened Coulomb potential at large distance. The exciton binding energy in the isolated wire is about ten times larger than that in the quantum well, and that in the semi-isolated wire is also intermediate between those in the isolated wire and in the quantum well. When the lateral width increases the binding energy decreases further, and approaches that in the quantum well. The real valence-band structure is taken into account, the exciton wave functions of the ground state in the zero-order approximation are given, and the reduced mass is calculated. The effect of the coupling between the ground and excited states are considered by the degenerate perturbation method, and it is found the coupling effect is small compared to the binding energy.

降低超大规模集成电路用高纯水中总有机碳的能量传递光化学模型

本文提出用185nm紫外线降低高压纯水中总有机碳（TOC）的能量传递光化学模型。计算了水的流量、TOC的浓度、照射腔的尺寸与所需紫外光能量的关系，从而解决了在工程设计中185nm紫外灯的选择和计算方法。根据理论计算出的结果和实验十分一致，主宰了本模型的正确性。使高纯水中的TOC由4200μg/l降至0.3μg/l，是目前国内外高纯水中TOC浓度的最好水平。

Preparation and characterization of erbium doped sol-gel silica glasses

Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 ma, corresponding to the I-4(13/2)-I-4(15/2) transition, its full width at half-maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 Mn instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended X-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.